| Citation: |
Chen Xinliang, Xu Buheng, Xue Junming, Zhao Ying, Zhang Xiaodan, Geng Xinhua. ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells[J]. Journal of Semiconductors, 2005, 26(12): 2363-2368.
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Chen X L, Xu B H, Xue J M, Zhao Y, Zhang X D, Geng X H. ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells[J]. Chin. J. Semicond., 2005, 26(12): 2363.
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ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells
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Abstract
Microstructure and photo-electronic properties of ZnO films grown by metal organic chemical vapor deposition at different B2H6 flow rates are investigated.XRD spectra and SEM photos indicate that B-doping plays a great role on the microstructure of ZnO films.By optimizing conditions with the B2H6 flow rate as the dopant gas set at 17sccm,a low sheet resistance (38Ω/□), and high transparency (＞85%) in the range of visible and infrared light,and a mobility of 17.8cm2/(V·s) are obtained for a 700nm thick ZnO film deposited on a 20cm×20cm substrate at a low temperature of 170℃.After the ZnO film is applied as the back contact in a solar cell,Jsc can be effectively improved by nearly 3mA,and a 9.09% efficiency is obtained in a large-area (20cm×20cm) a-Si integrated solar cell.-
Keywords:
- MOCVD,
- ZnO film,
- B-doping,
- back contact,
- solar cell
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References
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Proportional views
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