Chin. J. Semicond. > 1996, Volume 17 > Issue 9 > 693-697
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注氟SIMOX隐埋SiO_2的辐照感生电荷分布特性

竺士炀，林成鲁，高剑侠，李金华

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    Received: 18 August 2015 Revised: Online: Published: 01 September 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(9): 693-697
      竺士炀，林成鲁，高剑侠，李金华. 注氟SIMOX隐埋SiO_2的辐照感生电荷分布特性[J]. 半导体学报(英文版), 1996, 17(9): 693-697.
      Citation:
      竺士炀，林成鲁，高剑侠，李金华. 注氟SIMOX隐埋SiO_2的辐照感生电荷分布特性[J]. 半导体学报(英文版), 1996, 17(9): 693-697.
      shu

      • Received Date: 2015-08-18

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