Simulation study of a 4H-SiC lateral BJT for monolithic power integration

Shiwei Liang; Jun Wang; Fang Fang; Linfeng Deng

doi:10.1088/1674-4926/39/12/124004

J. Semicond. > 2018, Volume 39 > Issue 12 > 124004

SEMICONDUCTOR DEVICES

Simulation study of a 4H-SiC lateral BJT for monolithic power integration

Shiwei Liang, Jun Wang, Fang Fang and Linfeng Deng

+ Author Affiliations

Corresponding author: Jun Wang, Email: junwang@hnu.edu.cn

DOI: 10.1088/1674-4926/39/12/124004

Abstract: Power integration based on 4H-SiC is a very promising technology for high-frequency and high-temperature power electronics applications. However, the fabrication processes used in Si BiCMOS technology is not applicable in 4H-SiC at present, and few studies on the monolithic power integration of the SiC signal devices and power devices have been reported. In this paper, we propose a novel lateral BJT structure, which is suitable for monolithically integrating with the vertical power BJT on the same epitaxial wafer at the cost of one additional mask. The signal BJT’s static and dynamic characteristics are comprehensively investigated by TCAD simulation. Simulation results show that the common-emitter current gains of the 4H-SiC signal BJT are 133 and 52 at room temperature and 300 °C, respectively. Its implementation in an inverter shows that its switching time is about 200 ns.

Key words: SiC BJT, integrated circuit, current gain, power integration

References

[1]	Neudeck P G, Okojie R S, Chen L Y. High-temperature electronics – a role for wide bandgap semiconductors. Proc IEEE, 2002: 1065
[2]	Hedayati R, Lanni L, Malm B G, et al. A 500 °C 8-b digital-to-analog converter in silicon carbide bipolar technology. IEEE Trans Electron Devices, 2016, 63(9): 3445 doi: 10.1109/TED.2016.2588418
[3]	Tian Y, Lanni L, Rusu A, et al. Silicon carbide fully differential amplifier characterized up to 500 °C. IEEE Trans Electron Devices, 2016, 63(6): 2242 doi: 10.1109/TED.2016.2549062
[4]	Hedayati R, Lanni L, Rodriguez S, et al. A monolithic, 500 °C operational amplifier in 4H-SiC bipolar technology. IEEE Electron Device Lett, 2014, 35(7): 693 doi: 10.1109/LED.2014.2322335
[5]	Lanni L, Malm B G, Östling M, et al. 500 °C bipolar integrated OR/NOR gate in 4H-SiC. IEEE Electron Device Lett, 2013, 34(9): 1091 doi: 10.1109/LED.2013.2272649
[6]	Kargarrazi S, Lanni L, Saggini S, et al. 500 °C bipolar SiC linear voltage regulator. IEEE Trans Electron Devices, 2015, 62(6): 1953 doi: 10.1109/TED.2015.2417097
[7]	Siddiqui A, Elgabra H, Singh S. Design considerations for 4H-SiC lateral BJTs for high temperature logic applications. IEEE J Electron Devices Soc, 2018, 6: 126 doi: 10.1109/JEDS.2017.2785327
[8]	Neudeck P G, Spry D J, Chen L, et al. Demonstration of 4H-SiC digital integrated circuits above 800 °C. IEEE Electron Device Lett, 2017, 38(8): 1082 doi: 10.1109/LED.2017.2719280
[9]	Spry D J, Neudeck P G, Chen L, et al. Prolonged 500 °C demonstration of 4H-SiC JFET ICs with two-level interconnect. IEEE Electron Device Lett, 2016, 37(5): 625 doi: 10.1109/LED.2016.2544700
[10]	Neudeck P G, Spry D J, Chen L, et al. Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C. 2016 European Conference on Silicon Carbide & Related Materials, 2016: 1
[11]	Zhang Y X, Sheng K, Su M , et al. Development of 4H-SiC LJFET-based power IC. IEEE Trans Electron Devices, 2008, 55(8): 1934 doi: 10.1109/TED.2008.926676
[12]	Zhang Y M, Wang C, Zhang Y M, et al. Semi-insulating SiC formed by Vanadium ion implantation. IEEE International Conference on Electron Devices and Solid-State Circuits, 2008: 1
[13]	Kimoto T, Nakajima T, Matsunami H, et al. Formation of semi-insulating 6H-SiC layers by vanadium ion implantations. Appl Phys Lett, 1996, 69: 1113 doi: 10.1063/1.117075
[14]	Mitchel W C, Mitchell W D. Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC. J Appl Phys, 2007, 101: 013707 doi: 10.1063/1.2407263
[15]	Berthou M, Godignon P, Millán J. Monolithically integrated temperature sensor in silicon carbide power MOSFETs. IEEE Trans Power Electron, 2014, 29(9): 4970 doi: 10.1109/TPEL.2013.2289013
[16]	Alexandru M, Banu V, Montserrat J, et al. Monolithic integration of high temperature silicon carbide integrated circuits. ECS Trans, 2013, 58(4): 375 doi: 10.1149/05804.0375ecst
[17]	Elgabra H, Siddiqui A, Singh S. Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications. Jpn J Appl Phys, 2016, 55(4S): 1
[18]	Singh S. High-performance TTL bipolar integrated circuits in 4H-SiC. PhD Dissertation, Purdue University, 2010
[19]	Morisette D. Development of robust power Schottky barrier diodes　in silicon carbide. PhD Dissertation, Purdue University, 2001
[20]	NSM Archive—Silicon Carbide (SiC)—Recombination Parameters. [Online]. Available: http://www.ioffe.ru/SVA/NSM/Semicond/SiC/recombination.html. 2017

Fig. 1. Cross-sectional view of (a) traditional lateral BJT and (b) proposed power integration concept.

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Fig. 2. (Color online) Comparison of I–V between (a) the traditional lateral BJT and (b) the novel lateral BJT structure.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (a) Current gain varying with the collector current and (b) temperature-dependent current gain.

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Fig. 4. (a) Breakdown characteristic of the lateral NPN BJT and (b) electric field along the orthogonal direction of the collector junction.

DownLoad: Full-Size Img PowerPoint

Fig. 6. The simulated waveforms of the inverter.

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Fig. 5. Circuit configuration of the inverter basic logic gate.

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Table 1. Key parameters used in the simulations.

Parameter	Proposed lateral BJT	Conventional lateral BJT
Base doping (10¹⁷ cm⁻³)	1	1
Emitter doping (10¹⁹ cm⁻³)	2	2
Collector doping (cm⁻³)	2 × 10¹⁹	4.8 × 10¹⁵
Collector width (μm)	4	4
Emitter width (μm)	5	5
Base width (μm)	5	5
Distance between C and B	2	2
Distance between C and E	1.5	/
Lifetime （τ_n = 2τ_p, μs）	0.6	0.6

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[1]	Neudeck P G, Okojie R S, Chen L Y. High-temperature electronics – a role for wide bandgap semiconductors. Proc IEEE, 2002: 1065
[2]	Hedayati R, Lanni L, Malm B G, et al. A 500 °C 8-b digital-to-analog converter in silicon carbide bipolar technology. IEEE Trans Electron Devices, 2016, 63(9): 3445 doi: 10.1109/TED.2016.2588418
[3]	Tian Y, Lanni L, Rusu A, et al. Silicon carbide fully differential amplifier characterized up to 500 °C. IEEE Trans Electron Devices, 2016, 63(6): 2242 doi: 10.1109/TED.2016.2549062
[4]	Hedayati R, Lanni L, Rodriguez S, et al. A monolithic, 500 °C operational amplifier in 4H-SiC bipolar technology. IEEE Electron Device Lett, 2014, 35(7): 693 doi: 10.1109/LED.2014.2322335
[5]	Lanni L, Malm B G, Östling M, et al. 500 °C bipolar integrated OR/NOR gate in 4H-SiC. IEEE Electron Device Lett, 2013, 34(9): 1091 doi: 10.1109/LED.2013.2272649
[6]	Kargarrazi S, Lanni L, Saggini S, et al. 500 °C bipolar SiC linear voltage regulator. IEEE Trans Electron Devices, 2015, 62(6): 1953 doi: 10.1109/TED.2015.2417097
[7]	Siddiqui A, Elgabra H, Singh S. Design considerations for 4H-SiC lateral BJTs for high temperature logic applications. IEEE J Electron Devices Soc, 2018, 6: 126 doi: 10.1109/JEDS.2017.2785327
[8]	Neudeck P G, Spry D J, Chen L, et al. Demonstration of 4H-SiC digital integrated circuits above 800 °C. IEEE Electron Device Lett, 2017, 38(8): 1082 doi: 10.1109/LED.2017.2719280
[9]	Spry D J, Neudeck P G, Chen L, et al. Prolonged 500 °C demonstration of 4H-SiC JFET ICs with two-level interconnect. IEEE Electron Device Lett, 2016, 37(5): 625 doi: 10.1109/LED.2016.2544700
[10]	Neudeck P G, Spry D J, Chen L, et al. Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C. 2016 European Conference on Silicon Carbide & Related Materials, 2016: 1
[11]	Zhang Y X, Sheng K, Su M , et al. Development of 4H-SiC LJFET-based power IC. IEEE Trans Electron Devices, 2008, 55(8): 1934 doi: 10.1109/TED.2008.926676
[12]	Zhang Y M, Wang C, Zhang Y M, et al. Semi-insulating SiC formed by Vanadium ion implantation. IEEE International Conference on Electron Devices and Solid-State Circuits, 2008: 1
[13]	Kimoto T, Nakajima T, Matsunami H, et al. Formation of semi-insulating 6H-SiC layers by vanadium ion implantations. Appl Phys Lett, 1996, 69: 1113 doi: 10.1063/1.117075
[14]	Mitchel W C, Mitchell W D. Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC. J Appl Phys, 2007, 101: 013707 doi: 10.1063/1.2407263
[15]	Berthou M, Godignon P, Millán J. Monolithically integrated temperature sensor in silicon carbide power MOSFETs. IEEE Trans Power Electron, 2014, 29(9): 4970 doi: 10.1109/TPEL.2013.2289013
[16]	Alexandru M, Banu V, Montserrat J, et al. Monolithic integration of high temperature silicon carbide integrated circuits. ECS Trans, 2013, 58(4): 375 doi: 10.1149/05804.0375ecst
[17]	Elgabra H, Siddiqui A, Singh S. Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications. Jpn J Appl Phys, 2016, 55(4S): 1
[18]	Singh S. High-performance TTL bipolar integrated circuits in 4H-SiC. PhD Dissertation, Purdue University, 2010
[19]	Morisette D. Development of robust power Schottky barrier diodes　in silicon carbide. PhD Dissertation, Purdue University, 2001
[20]	NSM Archive—Silicon Carbide (SiC)—Recombination Parameters. [Online]. Available: http://www.ioffe.ru/SVA/NSM/Semicond/SiC/recombination.html. 2017

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Received: 26 April 2018 Revised: 05 June 2018 Online: Uncorrected proof: 25 July 2018Accepted Manuscript: 03 August 2018Corrected proof: 01 November 2018Published: 13 December 2018

Article Navigation > Journal of Semiconductors > 2018 > 39(12): 124004

Shiwei Liang, Jun Wang, Fang Fang, Linfeng Deng. Simulation study of a 4H-SiC lateral BJT for monolithic power integration[J]. Journal of Semiconductors, 2018, 39(12): 124004. doi: 10.1088/1674-4926/39/12/124004 ****S W Liang, J Wang, F Fang, L F Deng, Simulation study of a 4H-SiC lateral BJT for monolithic power integration[J]. J. Semicond., 2018, 39(12): 124004. doi: 10.1088/1674-4926/39/12/124004.

Citation:

Shiwei Liang, Jun Wang, Fang Fang, Linfeng Deng. Simulation study of a 4H-SiC lateral BJT for monolithic power integration[J]. Journal of Semiconductors, 2018, 39(12): 124004. doi: 10.1088/1674-4926/39/12/124004 ****

S W Liang, J Wang, F Fang, L F Deng, Simulation study of a 4H-SiC lateral BJT for monolithic power integration[J]. J. Semicond., 2018, 39(12): 124004. doi: 10.1088/1674-4926/39/12/124004.

Citation:

S W Liang, J Wang, F Fang, L F Deng, Simulation study of a 4H-SiC lateral BJT for monolithic power integration[J]. J. Semicond., 2018, 39(12): 124004. doi: 10.1088/1674-4926/39/12/124004.

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Simulation study of a 4H-SiC lateral BJT for monolithic power integration

DOI: 10.1088/1674-4926/39/12/124004

College of Electrical and Information Engineering, Hunan University, Changsha 410082, China

Funds:

Project supported by the National Natural Science Foundation of China (No. 51577054).

More Information

Corresponding author: Email: junwang@hnu.edu.cn
Received Date: 2018-04-26
Revised Date: 2018-06-05
Published Date: 2018-12-01

Abstract

Abstract

Power integration based on 4H-SiC is a very promising technology for high-frequency and high-temperature power electronics applications. However, the fabrication processes used in Si BiCMOS technology is not applicable in 4H-SiC at present, and few studies on the monolithic power integration of the SiC signal devices and power devices have been reported. In this paper, we propose a novel lateral BJT structure, which is suitable for monolithically integrating with the vertical power BJT on the same epitaxial wafer at the cost of one additional mask. The signal BJT’s static and dynamic characteristics are comprehensively investigated by TCAD simulation. Simulation results show that the common-emitter current gains of the 4H-SiC signal BJT are 133 and 52 at room temperature and 300 °C, respectively. Its implementation in an inverter shows that its switching time is about 200 ns.
- SiC BJT,
- integrated circuit,
- current gain,
- power integration

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References(20)

References

[1]	Neudeck P G, Okojie R S, Chen L Y. High-temperature electronics – a role for wide bandgap semiconductors. Proc IEEE, 2002: 1065
[2]	Hedayati R, Lanni L, Malm B G, et al. A 500 °C 8-b digital-to-analog converter in silicon carbide bipolar technology. IEEE Trans Electron Devices, 2016, 63(9): 3445 doi: 10.1109/TED.2016.2588418
[3]	Tian Y, Lanni L, Rusu A, et al. Silicon carbide fully differential amplifier characterized up to 500 °C. IEEE Trans Electron Devices, 2016, 63(6): 2242 doi: 10.1109/TED.2016.2549062
[4]	Hedayati R, Lanni L, Rodriguez S, et al. A monolithic, 500 °C operational amplifier in 4H-SiC bipolar technology. IEEE Electron Device Lett, 2014, 35(7): 693 doi: 10.1109/LED.2014.2322335
[5]	Lanni L, Malm B G, Östling M, et al. 500 °C bipolar integrated OR/NOR gate in 4H-SiC. IEEE Electron Device Lett, 2013, 34(9): 1091 doi: 10.1109/LED.2013.2272649
[6]	Kargarrazi S, Lanni L, Saggini S, et al. 500 °C bipolar SiC linear voltage regulator. IEEE Trans Electron Devices, 2015, 62(6): 1953 doi: 10.1109/TED.2015.2417097
[7]	Siddiqui A, Elgabra H, Singh S. Design considerations for 4H-SiC lateral BJTs for high temperature logic applications. IEEE J Electron Devices Soc, 2018, 6: 126 doi: 10.1109/JEDS.2017.2785327
[8]	Neudeck P G, Spry D J, Chen L, et al. Demonstration of 4H-SiC digital integrated circuits above 800 °C. IEEE Electron Device Lett, 2017, 38(8): 1082 doi: 10.1109/LED.2017.2719280
[9]	Spry D J, Neudeck P G, Chen L, et al. Prolonged 500 °C demonstration of 4H-SiC JFET ICs with two-level interconnect. IEEE Electron Device Lett, 2016, 37(5): 625 doi: 10.1109/LED.2016.2544700
[10]	Neudeck P G, Spry D J, Chen L, et al. Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C. 2016 European Conference on Silicon Carbide & Related Materials, 2016: 1
[11]	Zhang Y X, Sheng K, Su M , et al. Development of 4H-SiC LJFET-based power IC. IEEE Trans Electron Devices, 2008, 55(8): 1934 doi: 10.1109/TED.2008.926676
[12]	Zhang Y M, Wang C, Zhang Y M, et al. Semi-insulating SiC formed by Vanadium ion implantation. IEEE International Conference on Electron Devices and Solid-State Circuits, 2008: 1
[13]	Kimoto T, Nakajima T, Matsunami H, et al. Formation of semi-insulating 6H-SiC layers by vanadium ion implantations. Appl Phys Lett, 1996, 69: 1113 doi: 10.1063/1.117075
[14]	Mitchel W C, Mitchell W D. Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC. J Appl Phys, 2007, 101: 013707 doi: 10.1063/1.2407263
[15]	Berthou M, Godignon P, Millán J. Monolithically integrated temperature sensor in silicon carbide power MOSFETs. IEEE Trans Power Electron, 2014, 29(9): 4970 doi: 10.1109/TPEL.2013.2289013
[16]	Alexandru M, Banu V, Montserrat J, et al. Monolithic integration of high temperature silicon carbide integrated circuits. ECS Trans, 2013, 58(4): 375 doi: 10.1149/05804.0375ecst
[17]	Elgabra H, Siddiqui A, Singh S. Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications. Jpn J Appl Phys, 2016, 55(4S): 1
[18]	Singh S. High-performance TTL bipolar integrated circuits in 4H-SiC. PhD Dissertation, Purdue University, 2010
[19]	Morisette D. Development of robust power Schottky barrier diodes　in silicon carbide. PhD Dissertation, Purdue University, 2001
[20]	NSM Archive—Silicon Carbide (SiC)—Recombination Parameters. [Online]. Available: http://www.ioffe.ru/SVA/NSM/Semicond/SiC/recombination.html. 2017

Simulation study of a 4H-SiC lateral BJT for monolithic power integration

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