Chin. J. Semicond. > 1985, Volume 6 > Issue 3 > 317-319
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单晶硅的10.6μm光吸收系数与电阻率的关系

吴仲墀 , 赵有源 , 高如芳 and 钱佑华

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(3): 317-319
      吴仲墀, 赵有源, 高如芳, 钱佑华. 单晶硅的10.6μm光吸收系数与电阻率的关系[J]. 半导体学报(英文版), 1985, 6(3): 317-319.
      Citation:
      吴仲墀, 赵有源, 高如芳, 钱佑华. 单晶硅的10.6μm光吸收系数与电阻率的关系[J]. 半导体学报(英文版), 1985, 6(3): 317-319.
      shu

      • Received Date: 2015-08-20

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