Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 481-485
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离散谱折射率法优化设计深刻蚀、单模GaAs/GaAlAs脊形光波导

马慧莲 , 杨建义 , 江晓清 and 王明华

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Key words: 离散谱折射率法, 深刻蚀, GaAs/GaAlAs

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 481-485
      马慧莲, 杨建义, 江晓清, 王明华. 离散谱折射率法优化设计深刻蚀、单模GaAs/GaAlAs脊形光波导[J]. 半导体学报(英文版), 2001, 22(4): 481-485.
      Citation:
      马慧莲, 杨建义, 江晓清, 王明华. 离散谱折射率法优化设计深刻蚀、单模GaAs/GaAlAs脊形光波导[J]. 半导体学报(英文版), 2001, 22(4): 481-485.
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      • Received Date: 2015-08-20

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