Citation: |
Zhou Qingjun, Liu Hongxia. Optimization and Application of SRAM in 90nm CMOS Technology[J]. Journal of Semiconductors, 2008, 29(5): 883-888.
****
Zhou Q J, Liu H X. Optimization and Application of SRAM in 90nm CMOS Technology[J]. J. Semicond., 2008, 29(5): 883.
|
Optimization and Application of SRAM in 90nm CMOS Technology
-
Abstract
This paper presents an optimized SRAM that is repairable and dissipates less power.To improve the yield of SRAMs per wafer,redundancy logic and an E-FUSE box are added to the SRAM and an SR SRAM is set up.In order to reduce power dissipation,power on/off states and isolation logic are introduced into the SR SRAM and an LPSR SRAM is constructed.The optimized LPSR SRAM64K×32 is used in SoC and the testing method of the LPSR SRAM64K×32 is also discussed.The SoC design is successfully implemented in the Chartered 90nm CMOS process.The SoC chip occupies 56mm×56mm of die area and the power dissipation is 1997mW.The test results indicate that LPSR SRAM64K×32 obtains 17301% power savings and the yield of the LPSR SRAM64K×32s per wafer is improved by 13255%.-
Keywords:
- optimization,
- LPSR SRAM,
- redundancy logic,
- power on/off states
-
References
-
Proportional views