J. Semicond. > 2008, Volume 29 > Issue 5 > 889-892

PAPERS

A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm

Zhao Yuhang, Zhu Jun and Cao Yongfeng

+ Author Affiliations

PDF

Abstract: The forbidden pitch "dip" in the critical dimension (CD) through the pitch curve is a well-known optical proximity effect.The CD and CD process window near the "dip" ,usually found near a pitch range of 1.1 to 1.4 wavelength/NA (numerical aperture),is smaller when compared with other pitches.This is caused by inadequate imaging contrast for an unequal line and space grating.Although this effect is relatively well-known,its relationship with typical process condition parameters,such as the effective image blur caused by the photo-acid diffusion during the post exposure bake or the aberration in the imaging lens,has not been systematically studied.In this paper,we will examine the correlation between the image blur and the effect on the CD,including the decrease in the CD value (the depth of the "dip" ) and the CD process window.We find that both the decrease in the CD value and the focus latitude near the forbidden pitch correlate very well with the effective Gaussian image blur.Longer effective diffusion length correlates well with a smaller process window and a deeper CD "dip" .We conclude that the dip depth is very sensitive to the change in image contrast.

Key words: forbidden pitcheffective resist diffusion lengthOPCOAIdeep-UV深紫外线

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4828 Times PDF downloads: 1092 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 05 December 2007 Online: Published: 01 May 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhao Yuhang, Zhu Jun, Cao Yongfeng. A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm[J]. Journal of Semiconductors, 2008, 29(5): 889-892. ****Zhao Y H, Zhu J, Cao Y F. A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm[J]. J. Semicond., 2008, 29(5): 889.
      Citation:
      Zhao Yuhang, Zhu Jun, Cao Yongfeng. A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm[J]. Journal of Semiconductors, 2008, 29(5): 889-892. ****
      Zhao Y H, Zhu J, Cao Y F. A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm[J]. J. Semicond., 2008, 29(5): 889.

      A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-29
      • Revised Date: 2007-12-05
      • Published Date: 2008-05-05

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return