Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1628-1633
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衬底温度对常压MOCVD生长的ZnO单晶膜的性能影响

熊传兵 , 方文卿 , 蒲勇 , 戴江南 , 王立 , 莫春兰 and 江风益

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Key words: MOCVD, ZnO, X射线双晶衍射, 原子力显微镜, 光致发光

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1628-1633
      熊传兵, 方文卿, 蒲勇, 戴江南, 王立, 莫春兰, 江风益. 衬底温度对常压MOCVD生长的ZnO单晶膜的性能影响[J]. 半导体学报(英文版), 2004, 25(12): 1628-1633.
      Citation:
      熊传兵, 方文卿, 蒲勇, 戴江南, 王立, 莫春兰, 江风益. 衬底温度对常压MOCVD生长的ZnO单晶膜的性能影响[J]. 半导体学报(英文版), 2004, 25(12): 1628-1633.
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      • Received Date: 2015-08-19

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