Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 849-854
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深亚微米非均匀掺杂MOSFET的衬偏效应及开启电压模型

张文良 and 杨之廉

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 849-854
      张文良, 杨之廉. 深亚微米非均匀掺杂MOSFET的衬偏效应及开启电压模型[J]. 半导体学报(英文版), 1997, 18(11): 849-854.
      Citation:
      张文良, 杨之廉. 深亚微米非均匀掺杂MOSFET的衬偏效应及开启电压模型[J]. 半导体学报(英文版), 1997, 18(11): 849-854.
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      • Received Date: 2015-08-19

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