Chin. J. Semicond. > 1984, Volume 5 > Issue 3 > 275-283
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硅衬底厚度和背接触势垒高度对MOS电容器性能的影响

夏永伟 , 孔令坤 and 张冬萱

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(3): 275-283
      夏永伟, 孔令坤, 张冬萱. 硅衬底厚度和背接触势垒高度对MOS电容器性能的影响[J]. 半导体学报(英文版), 1984, 5(3): 275-283.
      Citation:
      夏永伟, 孔令坤, 张冬萱. 硅衬底厚度和背接触势垒高度对MOS电容器性能的影响[J]. 半导体学报(英文版), 1984, 5(3): 275-283.
      shu

      • Received Date: 2015-08-20

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