Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 835-839
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注氮工艺对SIMOX器件电特性的影响

张国强 , 刘忠立 , 李宁 , 范楷 , 郑中山 , 张恩霞 , 易万兵 , 陈猛 and 王曦

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Key words: SIMOX, MOSFET, 氮

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 835-839
      张国强, 刘忠立, 李宁, 范楷, 郑中山, 张恩霞, 易万兵, 陈猛, 王曦. 注氮工艺对SIMOX器件电特性的影响[J]. 半导体学报(英文版), 2005, 26(4): 835-839.
      Citation:
      张国强, 刘忠立, 李宁, 范楷, 郑中山, 张恩霞, 易万兵, 陈猛, 王曦. 注氮工艺对SIMOX器件电特性的影响[J]. 半导体学报(英文版), 2005, 26(4): 835-839.
      shu

      • Received Date: 2015-08-19

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