Chin. J. Semicond. > 2002, Volume 23 > Issue 7 > 725-730
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量子阱结构中的等效宽度分析

周小平 , 周剑英 , 杨爱龄 , 李锡华 , 江晓清 and 王明华

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Key words: 量子阱, 等效宽度, 结合能, GaAs/GaAlAs

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(7): 725-730
      周小平, 周剑英, 杨爱龄, 李锡华, 江晓清, 王明华. 量子阱结构中的等效宽度分析[J]. 半导体学报(英文版), 2002, 23(7): 725-730.
      Citation:
      周小平, 周剑英, 杨爱龄, 李锡华, 江晓清, 王明华. 量子阱结构中的等效宽度分析[J]. 半导体学报(英文版), 2002, 23(7): 725-730.
      shu

      • Received Date: 2015-08-19

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