Total Dose Irradiation of FD SOI NMOSFET UnderDifferent Bias Configurations

Wang Ningjuan; Liu Zhongli; Li Ning; Yu Fang; Li Guohua

Chin. J. Semicond. > 2007, Volume 28 > Issue 5 > 750-754

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Total Dose Irradiation of FD SOI NMOSFET UnderDifferent Bias Configurations

Wang Ningjuan, Liu Zhongli, Li Ning, Yu Fang and Li Guohua

+ Author Affiliations

Abstract: The total dose irradiation effects under different bias configurations for fully-depleted (FD) silicon on insulator (SOI) devices are investigated,especially the influence on device performance from radiation-induced trapped-charges.The simulation results show that distribution of the electrical field is strongly dependent on the bias configuration.Moreover,the generation of trapped-charges is related to the electrical field.The variation of the electrical field distribution leads to the variation of trapped-charge distribution,which in turn results in the variation of device performance.Among the three different bias configurations,the OFF state has the highest density of trapped-charges and corresponds to the largest drift of threshold-voltage and leakage current of the front-gate transistor.

Key words: SOI, fully-depleted, total dose irradiation, device simulation

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Received: 18 August 2015 Revised: 09 January 2007 Online: Published: 01 May 2007

The total dose irradiation effects under different bias configurations for fully-depleted (FD) silicon on insulator (SOI) devices are investigated,especially the influence on device performance from radiation-induced trapped-charges.The simulation results show that distribution of the electrical field is strongly dependent on the bias configuration.Moreover,the generation of trapped-charges is related to the electrical field.The variation of the electrical field distribution leads to the variation of trapped-charge distribution,which in turn results in the variation of device performance.Among the three different bias configurations,the OFF state has the highest density of trapped-charges and corresponds to the largest drift of threshold-voltage and leakage current of the front-gate transistor.

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