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Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power

Shuiqing Li1, 2, §, , Qiangqiang Guo1, §, Heqing Deng2, Zhibai Zhong2, Jinjian Zheng2, LiXun Yang2, Jiangyong Zhang2, Changzheng Sun1, Zhibiao Hao1, Bing Xiong1, Yanjun Han1, Jian Wang1, Hongtao Li1, Lin Gan1, Lai Wang1, and Yi Luo1,

+ Author Affiliations

 Corresponding author: Shuiqing Li, lishuiqing@gan-semi.com; Lai Wang, wanglai@tsinghua.edu.cn; Yi Luo, luoy@tsinghua.edu.cn

DOI: 10.1088/1674-4926/24080031

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[1]
Nakamura S, Senoh M, Nagahama S I, et al. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes. Appl Phys Lett, 1996, 69, 4056 doi: 10.1063/1.117816
[2]
Liu J P, Zhang L Q, Li D Y, et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation. IEEE Photonics Technol Lett, 2017, 29, 2203 doi: 10.1109/LPT.2017.2770169
[3]
Zhong Z B, Lu S Q, Li J C, et al. Design and fabrication of high power InGaN blue laser diode over 8W. Opt Laser Technol, 2021, 139, 106985 doi: 10.1016/j.optlastec.2021.106985
[4]
Pourhashemi A, Farrell R M, Cohen D A, et al. High-power blue laser diodes with indium tin oxide cladding on semipolar ( $20\bar{21}$) GaN substrates. Appl Phys Lett, 2015, 106 doi: 10.1063/1.4915324
[5]
Nakamura S, Pearton S, Fasol G. The blue laser diode: GaN based light emitters and lasers. Springer Science & Business Media, 2013, 1, 1
[6]
Najda S P, Perlin P, Suski T, et al. GaN laser diode technology for visible-light communications. Electronics, 2022, 11, 1430 doi: 10.3390/electronics11091430
[7]
Behringer M, König H. Blue high-power laser diodes: Beam sources for novel applications. PhotonicsViews, 2020, 17, 60 doi: 10.1002/phvs.202000018
[8]
Tomiya S, Goto O, Ikeda M. Structural defects and degradation phenomena in high-power pure-blue InGaN-based laser diodes. Proc IEEE, 2010, 98, 1208 doi: 10.1109/JPROC.2009.2032306
[9]
Wen P Y, Zhang S M, Liu J P, et al. Investigation of InGaN/GaN laser degradation based on luminescence properties. J Appl Phys, 2016, 119 doi: 10.1063/1.4953236
[10]
Hempel M, Tomm J W, Stojetz B, et al. Kinetics of catastrophic optical damage in GaN-based diode lasers. Semicond Sci Technol, 2015, 30, 072001 doi: 10.1088/0268-1242/30/7/072001
[11]
Tomm J W, Ziegler M, Hempel M, et al. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers. Laser Photonics Rev, 2011, 5, 422 doi: 10.1002/lpor.201000023
[12]
Chang Y C, Huang M L, Chang Y H, et al. Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics. Microelectron Eng, 2011, 88, 1207 doi: 10.1016/j.mee.2011.03.098
[13]
Souto J, Pura J L, Jiménez J. Thermomechanical issues of high power laser diode catastrophic optical damage. J Phys D: Appl Phys, 2019, 52, 343002 doi: 10.1088/1361-6463/ab243f
[14]
Gao J Y, Hao M, Li W W, et al. Al2O3 insertion layer for improved PEALD SiO2/(Al)GaN interfaces. Phys Status Solidi A, 2018, 215, 1700498 doi: 10.1002/pssa.201700498
[15]
Rajib A, Kuddus A, Shida T, et al. AlO x thin films synthesized by mist chemical vapor deposition, monitored by a fast-scanning mobility particle analyzer, and applied as a gate insulating layer in the field-effect transistors. ACS Appl Electron Mater, 2021, 3, 658 doi: 10.1021/acsaelm.0c00758
[16]
Ben Y H, Liang F, Zhao D G, et al. Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes. Superlattices Microstruct, 2019, 133, 106208 doi: 10.1016/j.spmi.2019.106208
[17]
Alahyarizadeh G, Hassan Z, Thahab S M, et al. Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers. Optik, 2014, 125, 341 doi: 10.1016/j.ijleo.2013.06.059
Fig. 1.  (Color online) Schematic diagram of optimal growth path of GaN single crystal.

Fig. 2.  (Color online) CL image of (a) traditional GaN substrate. (b) GaN substrate improved by HVPE technology.

Fig. 3.  (Color online) (a) TEM image of InGaN/GaN SLs. (b) PL characteristics of sample A and sample B, where sample A is a conventional InGaN lower waveguide layer device, sample B is an InGaN/GaN SLs lower waveguide layer device.

Fig. 4.  (Color online) AFM images of ECR-deposited (AR)-Al2O3-pre optimization (a) and (HR)-Al2O3/Ta2O5-pre optimization (b) and (AR)-Al2O3-post optimization (c) and (HR)-Al2O3/Ta2O5-post optimization on GaN cleaved facets.

Fig. 5.  (Color online) (a) The Power-Current-Voltage (PIV) as well as WPE characteristics of the LD. (b) Spectra of the LD, the illustration is a microscopy image of the GaN laser during light emission.

[1]
Nakamura S, Senoh M, Nagahama S I, et al. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes. Appl Phys Lett, 1996, 69, 4056 doi: 10.1063/1.117816
[2]
Liu J P, Zhang L Q, Li D Y, et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation. IEEE Photonics Technol Lett, 2017, 29, 2203 doi: 10.1109/LPT.2017.2770169
[3]
Zhong Z B, Lu S Q, Li J C, et al. Design and fabrication of high power InGaN blue laser diode over 8W. Opt Laser Technol, 2021, 139, 106985 doi: 10.1016/j.optlastec.2021.106985
[4]
Pourhashemi A, Farrell R M, Cohen D A, et al. High-power blue laser diodes with indium tin oxide cladding on semipolar ( $20\bar{21}$) GaN substrates. Appl Phys Lett, 2015, 106 doi: 10.1063/1.4915324
[5]
Nakamura S, Pearton S, Fasol G. The blue laser diode: GaN based light emitters and lasers. Springer Science & Business Media, 2013, 1, 1
[6]
Najda S P, Perlin P, Suski T, et al. GaN laser diode technology for visible-light communications. Electronics, 2022, 11, 1430 doi: 10.3390/electronics11091430
[7]
Behringer M, König H. Blue high-power laser diodes: Beam sources for novel applications. PhotonicsViews, 2020, 17, 60 doi: 10.1002/phvs.202000018
[8]
Tomiya S, Goto O, Ikeda M. Structural defects and degradation phenomena in high-power pure-blue InGaN-based laser diodes. Proc IEEE, 2010, 98, 1208 doi: 10.1109/JPROC.2009.2032306
[9]
Wen P Y, Zhang S M, Liu J P, et al. Investigation of InGaN/GaN laser degradation based on luminescence properties. J Appl Phys, 2016, 119 doi: 10.1063/1.4953236
[10]
Hempel M, Tomm J W, Stojetz B, et al. Kinetics of catastrophic optical damage in GaN-based diode lasers. Semicond Sci Technol, 2015, 30, 072001 doi: 10.1088/0268-1242/30/7/072001
[11]
Tomm J W, Ziegler M, Hempel M, et al. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers. Laser Photonics Rev, 2011, 5, 422 doi: 10.1002/lpor.201000023
[12]
Chang Y C, Huang M L, Chang Y H, et al. Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics. Microelectron Eng, 2011, 88, 1207 doi: 10.1016/j.mee.2011.03.098
[13]
Souto J, Pura J L, Jiménez J. Thermomechanical issues of high power laser diode catastrophic optical damage. J Phys D: Appl Phys, 2019, 52, 343002 doi: 10.1088/1361-6463/ab243f
[14]
Gao J Y, Hao M, Li W W, et al. Al2O3 insertion layer for improved PEALD SiO2/(Al)GaN interfaces. Phys Status Solidi A, 2018, 215, 1700498 doi: 10.1002/pssa.201700498
[15]
Rajib A, Kuddus A, Shida T, et al. AlO x thin films synthesized by mist chemical vapor deposition, monitored by a fast-scanning mobility particle analyzer, and applied as a gate insulating layer in the field-effect transistors. ACS Appl Electron Mater, 2021, 3, 658 doi: 10.1021/acsaelm.0c00758
[16]
Ben Y H, Liang F, Zhao D G, et al. Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes. Superlattices Microstruct, 2019, 133, 106208 doi: 10.1016/j.spmi.2019.106208
[17]
Alahyarizadeh G, Hassan Z, Thahab S M, et al. Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers. Optik, 2014, 125, 341 doi: 10.1016/j.ijleo.2013.06.059
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    Received: 22 August 2024 Revised: 12 September 2024 Online: Accepted Manuscript: 09 October 2024Uncorrected proof: 21 October 2024

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      Shuiqing Li, Qiangqiang Guo, Heqing Deng, Zhibai Zhong, Jinjian Zheng, LiXun Yang, Jiangyong Zhang, Changzheng Sun, Zhibiao Hao, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Lin Gan, Lai Wang, Yi Luo. Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power[J]. Journal of Semiconductors, 2024, In Press. doi: 10.1088/1674-4926/24080031 ****S Q Li, Q Q Guo, H Q Deng, Z B Zhong, J J Zheng, L X Yang, J Y Zhang, C Z Sun, Z B Hao, B Xiong, Y J Han, J Wang, H T Li, L Gan, L Wang, and Y Luo, Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power[J]. J. Semicond., 2024, 45(11), 110501 doi: 10.1088/1674-4926/24080031
      Citation:
      Shuiqing Li, Qiangqiang Guo, Heqing Deng, Zhibai Zhong, Jinjian Zheng, LiXun Yang, Jiangyong Zhang, Changzheng Sun, Zhibiao Hao, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Lin Gan, Lai Wang, Yi Luo. Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power[J]. Journal of Semiconductors, 2024, In Press. doi: 10.1088/1674-4926/24080031 ****
      S Q Li, Q Q Guo, H Q Deng, Z B Zhong, J J Zheng, L X Yang, J Y Zhang, C Z Sun, Z B Hao, B Xiong, Y J Han, J Wang, H T Li, L Gan, L Wang, and Y Luo, Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power[J]. J. Semicond., 2024, 45(11), 110501 doi: 10.1088/1674-4926/24080031

      Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power

      DOI: 10.1088/1674-4926/24080031
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      • Shuiqing Li is the CEO of Anhui GaN Semiconductor Co., Ltd. Senior Engineer. He earned his bachelor's degree from Xia'men University in 1999 and master degree from Tsinghua University in 2011. He is now a PhD student in department of electronic engineering, Tsinghua University. He is mainly engaged in the research of high-power GaN lasers. He presided over and participated in a number of national, provincial and municipal major R & D projects. He has published 7 papers and applied for more than 60 patents
      • Qiangqiang Guo is a postdoctoral fellow in the Department of Electronic Engineering, Tsinghua University, under the supervision of Professors Lai Wang and Yi Luo. He earned his PhD degree in Institute of Semiconductors, Chinese Academy of Sciences in 2023, under the supervision of Professors Fengqi Liu. He is mainly engaged in the research of electro-photothermal characteristics of compound semiconductor lasers, GaN-based Micro-LED, and heterogeneous hybrid integrated laser chips
      • Lai Wang, Professor and deputy head of the Department of Electronic Engineering, Tsinghua University. He received his bachelor's degree and PhD degree both in the Department of Electronic Engineering of Tsinghua University in 2003 and 2008, respectively. His research interest has been in the area of wide-band gap semiconductor materials and optoelectronic devices, with recent focuses on GaN-based Micro-LED, blue and green laser diodes, in-sensor computing devices, etc
      • Yi Luo, Member of CAE, Professor of the Department of Electronic Engineering, Tsinghua University, Deputy Director of the Beijing National Research Center for Information Science and Technology. He received his bachelor's degree and PhD degree from the Department of Electronic Engineering of Tsinghua University in 1983 and the Department of Electronic Engineering of Tokyo University in 1990, respectively. His research interest has been in the area of semiconductor optoelectronic devices
      • Corresponding author: lishuiqing@gan-semi.comwanglai@tsinghua.edu.cnluoy@tsinghua.edu.cn
      • Received Date: 2024-08-22
      • Revised Date: 2024-09-12
      • Available Online: 2024-10-09

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