High quality 6-inch single-crystalline AlN template for E-mode HEMT power device

Zhiwen Liang; Shangfeng Liu; Ye Yuan; Tongxin Lu; Xiaopeng Li; Zirong Wang; Neng Zhang; Tai Li; Xiangdong Li; Qi Wang; Shengqiang Zhou; Kai Kang; Jincheng Zhang; Yue Hao; Xinqiang Wang

doi:10.1088/1674-4926/24100041

J. Semicond. > 2025, Volume 46 > Issue 3 > 032501

ARTICLES

High quality 6-inch single-crystalline AlN template for E-mode HEMT power device

Zhiwen Liang¹, Shangfeng Liu^{1, 3, 7}, Ye Yuan^1,, Tongxin Lu^{1, 7}, Xiaopeng Li¹, Zirong Wang⁶, Neng Zhang⁶, Tai Li^{1, 7}, Xiangdong Li^2,, Qi Wang⁵, Shengqiang Zhou⁴, Kai Kang⁶, Jincheng Zhang^{2, 8}, Yue Hao^{2, 8} and Xinqiang Wang^{1, 5, 7,}

+ Author Affiliations

1. Songshan Lake Materials Laboratory, Dongguan 523808, China
2. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China
3. School of Physical Sciences, Great Bay University, Dongguan 523808, China
4. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
5. Dongguan Institute of Opto-Electronics Peking University, Dongguan 523808, China
6. Sinopatt. Technology Co., Ltd, Songshan Lake, Dongguan 523808, China
7. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Nano-Optoelectronics Frontier Center of Ministry of Education (NFC-MOE), Peking University, Beijing 100871, China
8. State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

Author Bio:

Zhiwen Liang got his master's degree in 2012 from Jinnan University. His research focuses on GaN-based materials, mainly in the design and epitaxy of power electronic devices and Radio frequency epitaxy and the corresponding chip process development.

Ye Yuan got his PhD from Technische Universität Dresden in Germany in 2017. Then he joined Helmholtz-Zentrum Dresden-Rossendorf and King Abdullah University of Science and Technology as postdoc in 2017 and 2018, respectively. In 2019, he joined Songshan Lake Materials Laboratory as an associate investigator. His research mainly focuses on the growth, physics and application of ultra-wide bandgap semiconductors.

Xiangdong Li is a full professor with Guangzhou Institute of Technology, Xidian University, and a deputy director of Guangzhou wide bandgap semiconductor innovation center. He obtained the Ph.D. from IMEC, KU Leuven, in Belgium in 2020. His research interests include IC design, fabrication, and reliability of power semiconductors and he has authored more than 50 IEEE papers.

Xinqiang Wang is a full Professor of School of Physics at Peking University. He joined the faculty on May 2008, after more than 6 years' postdoctoral research at Chiba University and Japan Science Technology Agency, Japan. He has received the China National Funds for Distinguished Young Scientists in 2012 and has been awarded Changjiang Distinguished Professor by Ministry of Education in 2014. He mainly concentrates on Ⅲ-nitrides compound semiconductors including epitaxy and device fabrication. He is the author or co-author of 200+ refereed journal articles with over 3800 citations and has delivered over 40 invited talks at scientific conferences and contributed three chapters in three books.

Corresponding author: Ye Yuan, yuanye@sslab.org.cn; Xiangdong Li, xdli@xidian.edu.cn; Xinqiang Wang, wangshi@pku.edu.cn

DOI: 10.1088/1674-4926/24100041CSTR: 32376.14.1674-4926.24100041

Abstract: In the present work, the high uniform 6-inch single-crystalline AlN template is successfully achieved by high temperature annealing technique, which opens up the path towards industrial application in power device. Moreover, the outstanding crystalline-quality is confirmed by Rutherford backscattering spectrometry (RBS). In accompanied with the results from X-ray diffraction, the RBS results along both [0001] and $ [1\bar{2}13] $ reveal that the in-plane lattice is effectively reordered by high temperature annealing. In addition, the constant Φ_epi angle between [0001] and $ [1\bar{2}13] $ at different depths of 31.54° confirms the uniform compressive strain inside the AlN region. Benefitting from the excellent crystalline quality of AlN template, we can epitaxially grow the enhanced-mode high electron mobility transistor (HEMT) with a graded AlGaN buffer as thin as only ~300 nm. Such an ultra-thin AlGaN buffer layer results in the wafer-bow as low as 18.1 μm in 6-inch wafer scale. The fabricated HEMT devices with 16 μm-L_GD exhibits a threshold voltage (V_TH) of 1.1 V and a high OFF-state breakdown voltage (V_BD) over 1400 V. Furthermore, after 200 V high-voltage OFF-state stress, the current collapse is only 13.6%. Therefore, the advantages of both 6-inch size and excellent crystallinity announces the superiority of single-crystalline AlN template in low-cost electrical power applications.

Key words: single-crystalline, allium nitride, template, E-mode HEMT

References

[1]	Wang J M, Xie N, Xu F J, et al. Group-III nitride heteroepitaxial films approaching bulk-class quality. Nat Mater, 2023, 22, 853 doi: 10.1038/s41563-023-01573-6
[2]	Kneissl M, Seong T Y, Han J, et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat Photonics, 2019, 13, 233 doi: 10.1038/s41566-019-0359-9
[3]	Takao O, Banal R G, Ken K, et al. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam. Nat Photonics, 2010, 4, 767 doi: 10.1038/nphoton.2010.220
[4]	Zhao W W, A M Javad, Li Lei, et al. 15-GHz epitaxial AlN FBARs on SiC substrates. IEEE Electron Dev Lett, 2023, 44, 903 doi: 10.1109/LED.2023.3268863
[5]	Hartmann C, Dittmar A, Wollweber J, et al . Bulk AlN growth by physical vapour transport. Semicond Sci Technol, 2014, 29, 084002 doi: 10.1088/0268-1242/29/8/084002
[6]	Bickermann M, Epelbaum B M, Kazan M. et al. Growth and characterization of bulk AlN substrates grown by PVT. Phys Stat Sol (a), 2005, 202, 531 doi: 10.1002/pssa.200460416
[7]	Imura M, Nakano K, Narita G, et al. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers. J Cryst Growth, 2007, 298, 257 doi: 10.1016/j.jcrysgro.2006.10.043
[8]	Liu S F, Hoo J , Chen Z Y, et al. Effect of a lateral overgrowth process on the strain evolution of AlN films grown on a nanopatterned sapphire substrate for ultraviolet-C light-emitting diode applications. Phys Stat Sol RRL, 2021, 15, 2100363 doi: 10.1002/pssr.202100363
[9]	Guo Y M, Fang Y L, Yin J Y, et al. Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth. J Cryst Growth, 2017, 464, 119 doi: 10.1016/j.jcrysgro.2017.01.053
[10]	He C G, Zhao W, Wu H L, et al. High-quality AlN film grown on sputtered AlN/sapphire via growth-mode modification. Cryst Growth Des, 2018, 18, 6816 doi: 10.1021/acs.cgd.8b01045
[11]	Miyake H, Lin C H, Tokoro K, et al. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing. J Cryst Growth, 2016, 456, 155 doi: 10.1016/j.jcrysgro.2016.08.028
[12]	Liu S F, Yuan Y, Sh S S, et al. Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD. J Semicond, 2021, 42, 122804 doi: 10.1088/1674-4926/42/12/122804
[13]	Yoshizawa R, Miyake H, Hiramatsu K. Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2018, 57, 01AD05 doi: 10.7567/JJAP.57.01AD05
[14]	Fukuyama H, Miyake H, Nishio G, et al. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle. Jpn J Appl Phys, 2016, 55, 05FL02 doi: 10.7567/JJAP.55.05FL02
[15]	Liu S F, Yuan Y, Huang L J, et al. Drive high power UVC-LED wafer into low-cost 4-inch era: effect of strain modulation. Adv Funct Mater, 2022, 32, 2112111 doi: 10.1002/adfm.202112111
[16]	Lu T X, Fang X L, Zhang S B, et al. High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film. Appl Phys Lett, 2023, 123, 252105 doi: 10.1063/5.0181087
[17]	Liang Z W, Yuan Ye, Feng W Y, et al. From GaN crystallinity to device performance: Nucleation mode vs surface energy of single-crystalline AlN template. J Alloys Compd, 2024, 1002, 175363 doi: 10.1016/j.jallcom.2024.175363
[18]	Wang J B, Li X D, Cheng Z B, et al. Suppressing the leakage of GaN HEMTs on single-crystalline AlN templates by buffer optimization. IEEE Trans Electron Dev, 2024, 71, 6609 doi: 10.1109/TED.2024.3466841
[19]	Nishikata N, Kushida K, Nishimura T, et al. Evaluation of lattice displacement in Mg-implanted GaN by rutherford backscattering spectroscopy. Nucl Instrum Methods Phys Res Sect B, 2017, 409, 302 doi: 10.1016/j.nimb.2017.03.125
[20]	Sakuta H, Kawano Y, Yamanaka Y, et al. Diffusion of In atoms in InGaN ultra-thin films during post-growth thermal annealing by high-resolution Rutherford backscattering spectrometry. Phys Stat Sol (c), 2005, 2, 2407 doi: 10.1002/pssc.200461296
[21]	Wang M, Debernardi A, Berencén Y, et al. Breaking the doping limit in silicon by deep impurities. Phys Rev Applied, 2019, 11, 054039 doi: 10.1103/PhysRevApplied.11.054039
[22]	Pągowska K D, Kozubal M, Taube A, et al. Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling. Nucl Instrum Methods Phys Res Sect B, 2019, 444, 74 doi: 10.1016/j.nimb.2019.01.053
[23]	Caçador A, Jóźwik P, Magalhães S, et al. Extracting defect profiles in ion-implanted GaN from ion channeling. Mater Sci Semicond Process, 2023, 166, 107702 doi: 10.1016/j.mssp.2023.107702
[24]	Uesugi K, Shojiki K, Xiao S Y, et al. Effect of the sputtering deposition conditions on the crystallinity of high-temperature annealed AlN films. Coatings, 2021, 11, 956 doi: 10.3390/coatings11080956
[25]	Metzger T, Höpler R, Born E, et al. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry. Philos Mag A, 1998, 77, 1013 doi: 10.1080/01418619808221225
[26]	Ayers J E. The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction. J Cryst Growth, 1994, 135, 71 doi: 10.1016/0022-0248(94)90727-7
[27]	Lo C F, Kang T S, Liu L, et al. Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure. Appl Phys Lett, 2010, 97, 262116 doi: 10.1063/1.3533381

Fig. 1. (Color online) RBS random and channeling spectra of (a), (b) as-sputtered and (c), (d) post-annealed AlN along (a), (c) $ [0001] $ and (b), (d) $ [1\bar{2}13] $ directions; (e) angular scan in the AlN $ \left(10\bar{1}0\right) $ plane at different depths, and the normalized channeling signals along $ [0001] $ and $ [1\bar{2}13] $ directions are zoomed in (f) and (g), respectively; (h) the χ_min values of as-sputtered and post-annealed AlN along [0001] and $ [1\bar{2}13] $ directions as a function of depth.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) X-ray rocking curves (XRCs) of AlN-(002) and -(102) crystalline planes after annealing; (b) optical photograph of 6-inch single crystalline AlN template; (c) FWHM values of XRC-(002) and -(102) crystalline planes at positions marked in (b); (d) XRCs of (002) and (102) crystalline planes of GaN epitaxially grown on 6-inch single crystalline AlN template; (e) bow curves of 6 inch single-crystalline AlN template and HEMT device wafers; (f) atomic force microscopy (AFM) image of HEMT epilayer on single crystalline AlN template.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) SEM photograph and (b) cross-sectional diagram of enhancement-mode HEMT device on single-crystalline AlN template.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) and (b) Transfer, output characteristics and (c) I_D−V_DS curves of the enhancement-mode p-GaN gate HEMTs on single crystalline AlN template with L_GD of 16 μm after various OFF-state stress. (d) OFF-state breakdown characteristics of the enhancement-mode p-GaN gate HEMTs with L_GD from 10 to 22 µm.

DownLoad: Full-Size Img PowerPoint

[1]	Wang J M, Xie N, Xu F J, et al. Group-III nitride heteroepitaxial films approaching bulk-class quality. Nat Mater, 2023, 22, 853 doi: 10.1038/s41563-023-01573-6
[2]	Kneissl M, Seong T Y, Han J, et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat Photonics, 2019, 13, 233 doi: 10.1038/s41566-019-0359-9
[3]	Takao O, Banal R G, Ken K, et al. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam. Nat Photonics, 2010, 4, 767 doi: 10.1038/nphoton.2010.220
[4]	Zhao W W, A M Javad, Li Lei, et al. 15-GHz epitaxial AlN FBARs on SiC substrates. IEEE Electron Dev Lett, 2023, 44, 903 doi: 10.1109/LED.2023.3268863
[5]	Hartmann C, Dittmar A, Wollweber J, et al . Bulk AlN growth by physical vapour transport. Semicond Sci Technol, 2014, 29, 084002 doi: 10.1088/0268-1242/29/8/084002
[6]	Bickermann M, Epelbaum B M, Kazan M. et al. Growth and characterization of bulk AlN substrates grown by PVT. Phys Stat Sol (a), 2005, 202, 531 doi: 10.1002/pssa.200460416
[7]	Imura M, Nakano K, Narita G, et al. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers. J Cryst Growth, 2007, 298, 257 doi: 10.1016/j.jcrysgro.2006.10.043
[8]	Liu S F, Hoo J , Chen Z Y, et al. Effect of a lateral overgrowth process on the strain evolution of AlN films grown on a nanopatterned sapphire substrate for ultraviolet-C light-emitting diode applications. Phys Stat Sol RRL, 2021, 15, 2100363 doi: 10.1002/pssr.202100363
[9]	Guo Y M, Fang Y L, Yin J Y, et al. Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth. J Cryst Growth, 2017, 464, 119 doi: 10.1016/j.jcrysgro.2017.01.053
[10]	He C G, Zhao W, Wu H L, et al. High-quality AlN film grown on sputtered AlN/sapphire via growth-mode modification. Cryst Growth Des, 2018, 18, 6816 doi: 10.1021/acs.cgd.8b01045
[11]	Miyake H, Lin C H, Tokoro K, et al. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing. J Cryst Growth, 2016, 456, 155 doi: 10.1016/j.jcrysgro.2016.08.028
[12]	Liu S F, Yuan Y, Sh S S, et al. Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD. J Semicond, 2021, 42, 122804 doi: 10.1088/1674-4926/42/12/122804
[13]	Yoshizawa R, Miyake H, Hiramatsu K. Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2018, 57, 01AD05 doi: 10.7567/JJAP.57.01AD05
[14]	Fukuyama H, Miyake H, Nishio G, et al. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle. Jpn J Appl Phys, 2016, 55, 05FL02 doi: 10.7567/JJAP.55.05FL02
[15]	Liu S F, Yuan Y, Huang L J, et al. Drive high power UVC-LED wafer into low-cost 4-inch era: effect of strain modulation. Adv Funct Mater, 2022, 32, 2112111 doi: 10.1002/adfm.202112111
[16]	Lu T X, Fang X L, Zhang S B, et al. High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film. Appl Phys Lett, 2023, 123, 252105 doi: 10.1063/5.0181087
[17]	Liang Z W, Yuan Ye, Feng W Y, et al. From GaN crystallinity to device performance: Nucleation mode vs surface energy of single-crystalline AlN template. J Alloys Compd, 2024, 1002, 175363 doi: 10.1016/j.jallcom.2024.175363
[18]	Wang J B, Li X D, Cheng Z B, et al. Suppressing the leakage of GaN HEMTs on single-crystalline AlN templates by buffer optimization. IEEE Trans Electron Dev, 2024, 71, 6609 doi: 10.1109/TED.2024.3466841
[19]	Nishikata N, Kushida K, Nishimura T, et al. Evaluation of lattice displacement in Mg-implanted GaN by rutherford backscattering spectroscopy. Nucl Instrum Methods Phys Res Sect B, 2017, 409, 302 doi: 10.1016/j.nimb.2017.03.125
[20]	Sakuta H, Kawano Y, Yamanaka Y, et al. Diffusion of In atoms in InGaN ultra-thin films during post-growth thermal annealing by high-resolution Rutherford backscattering spectrometry. Phys Stat Sol (c), 2005, 2, 2407 doi: 10.1002/pssc.200461296
[21]	Wang M, Debernardi A, Berencén Y, et al. Breaking the doping limit in silicon by deep impurities. Phys Rev Applied, 2019, 11, 054039 doi: 10.1103/PhysRevApplied.11.054039
[22]	Pągowska K D, Kozubal M, Taube A, et al. Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling. Nucl Instrum Methods Phys Res Sect B, 2019, 444, 74 doi: 10.1016/j.nimb.2019.01.053
[23]	Caçador A, Jóźwik P, Magalhães S, et al. Extracting defect profiles in ion-implanted GaN from ion channeling. Mater Sci Semicond Process, 2023, 166, 107702 doi: 10.1016/j.mssp.2023.107702
[24]	Uesugi K, Shojiki K, Xiao S Y, et al. Effect of the sputtering deposition conditions on the crystallinity of high-temperature annealed AlN films. Coatings, 2021, 11, 956 doi: 10.3390/coatings11080956
[25]	Metzger T, Höpler R, Born E, et al. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry. Philos Mag A, 1998, 77, 1013 doi: 10.1080/01418619808221225
[26]	Ayers J E. The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction. J Cryst Growth, 1994, 135, 71 doi: 10.1016/0022-0248(94)90727-7
[27]	Lo C F, Kang T S, Liu L, et al. Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure. Appl Phys Lett, 2010, 97, 262116 doi: 10.1063/1.3533381

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Received: 30 October 2024 Revised: 23 December 2024 Online: Accepted Manuscript: 09 January 2025Uncorrected proof: 17 January 2025Published: 14 March 2025

Article Navigation > Journal of Semiconductors > 2025 > 46(3): 032501

Zhiwen Liang, Shangfeng Liu, Ye Yuan, Tongxin Lu, Xiaopeng Li, Zirong Wang, Neng Zhang, Tai Li, Xiangdong Li, Qi Wang, Shengqiang Zhou, Kai Kang, Jincheng Zhang, Yue Hao, Xinqiang Wang. High quality 6-inch single-crystalline AlN template for E-mode HEMT power device[J]. Journal of Semiconductors, 2025, 46(3): 032501. doi: 10.1088/1674-4926/24100041 ****Z W Liang, S F Liu, Y Yuan, T X Lu, X P Li, Z R Wang, N Zhang, T Li, X D Li, Q Wang, S Q Zhou, K Kang, J C Zhang, Y Hao, and X Q Wang, High quality 6-inch single-crystalline AlN template for E-mode HEMT power device[J]. J. Semicond., 2025, 46(3), 032501 doi: 10.1088/1674-4926/24100041

Citation:

Z W Liang, S F Liu, Y Yuan, T X Lu, X P Li, Z R Wang, N Zhang, T Li, X D Li, Q Wang, S Q Zhou, K Kang, J C Zhang, Y Hao, and X Q Wang, High quality 6-inch single-crystalline AlN template for E-mode HEMT power device[J]. J. Semicond., 2025, 46(3), 032501 doi: 10.1088/1674-4926/24100041

Citation:

PDF( 10624 KB)

High quality 6-inch single-crystalline AlN template for E-mode HEMT power device

DOI: 10.1088/1674-4926/24100041

CSTR: 32376.14.1674-4926.24100041

Zhiwen Liang¹,
Shangfeng Liu^{1, 3, 7},
Ye Yuan^1,,
Tongxin Lu^{1, 7},
Xiaopeng Li¹,
Zirong Wang⁶,
Neng Zhang⁶,
Tai Li^{1, 7},
Xiangdong Li^2,,
Qi Wang⁵,
Shengqiang Zhou⁴,
Kai Kang⁶,
Jincheng Zhang^{2, 8},
Yue Hao^{2, 8},
Xinqiang Wang^{1, 5, 7,}

1.
Songshan Lake Materials Laboratory, Dongguan 523808, China
2.
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China
3.
School of Physical Sciences, Great Bay University, Dongguan 523808, China
4.
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
5.
Dongguan Institute of Opto-Electronics Peking University, Dongguan 523808, China
6.
Sinopatt. Technology Co., Ltd, Songshan Lake, Dongguan 523808, China
7.
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Nano-Optoelectronics Frontier Center of Ministry of Education (NFC-MOE), Peking University, Beijing 100871, China
8.
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

More Information

Zhiwen Liang got his master's degree in 2012 from Jinnan University. His research focuses on GaN-based materials, mainly in the design and epitaxy of power electronic devices and Radio frequency epitaxy and the corresponding chip process development
Ye Yuan got his PhD from Technische Universität Dresden in Germany in 2017. Then he joined Helmholtz-Zentrum Dresden-Rossendorf and King Abdullah University of Science and Technology as postdoc in 2017 and 2018, respectively. In 2019, he joined Songshan Lake Materials Laboratory as an associate investigator. His research mainly focuses on the growth, physics and application of ultra-wide bandgap semiconductors
Xiangdong Li is a full professor with Guangzhou Institute of Technology, Xidian University, and a deputy director of Guangzhou wide bandgap semiconductor innovation center. He obtained the Ph.D. from IMEC, KU Leuven, in Belgium in 2020. His research interests include IC design, fabrication, and reliability of power semiconductors and he has authored more than 50 IEEE papers
Xinqiang Wang is a full Professor of School of Physics at Peking University. He joined the faculty on May 2008, after more than 6 years' postdoctoral research at Chiba University and Japan Science Technology Agency, Japan. He has received the China National Funds for Distinguished Young Scientists in 2012 and has been awarded Changjiang Distinguished Professor by Ministry of Education in 2014. He mainly concentrates on Ⅲ-nitrides compound semiconductors including epitaxy and device fabrication. He is the author or co-author of 200+ refereed journal articles with over 3800 citations and has delivered over 40 invited talks at scientific conferences and contributed three chapters in three books
Corresponding author: yuanye@sslab.org.cn; xdli@xidian.edu.cn; wangshi@pku.edu.cn
Received Date: 2024-10-30
Revised Date: 2024-12-23

Available Online: 2025-01-09

Abstract

Abstract

In the present work, the high uniform 6-inch single-crystalline AlN template is successfully achieved by high temperature annealing technique, which opens up the path towards industrial application in power device. Moreover, the outstanding crystalline-quality is confirmed by Rutherford backscattering spectrometry (RBS). In accompanied with the results from X-ray diffraction, the RBS results along both [0001] and $ [1\bar{2}13] $ reveal that the in-plane lattice is effectively reordered by high temperature annealing. In addition, the constant Φ_epi angle between [0001] and $ [1\bar{2}13] $ at different depths of 31.54° confirms the uniform compressive strain inside the AlN region. Benefitting from the excellent crystalline quality of AlN template, we can epitaxially grow the enhanced-mode high electron mobility transistor (HEMT) with a graded AlGaN buffer as thin as only ~300 nm. Such an ultra-thin AlGaN buffer layer results in the wafer-bow as low as 18.1 μm in 6-inch wafer scale. The fabricated HEMT devices with 16 μm-L_GD exhibits a threshold voltage (V_TH) of 1.1 V and a high OFF-state breakdown voltage (V_BD) over 1400 V. Furthermore, after 200 V high-voltage OFF-state stress, the current collapse is only 13.6%. Therefore, the advantages of both 6-inch size and excellent crystallinity announces the superiority of single-crystalline AlN template in low-cost electrical power applications.
- single-crystalline,
- allium nitride,
- template,
- E-mode HEMT

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