J. Semicond. > 2009, Volume 30 > Issue 2 > 024001
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SEMICONDUCTOR DEVICES

A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs

He Jin, Zhang Jian, Zhang Lining, Ma Chenyue and Chan Mansun

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DOI: 10.1088/1674-4926/30/2/024001

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Abstract: A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.

Key words: non-classical?MOS?transistor

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    Received: 18 August 2015 Revised: 26 October 2008 Online: Published: 01 February 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(2): 024001
      He Jin, Zhang Jian, Zhang Lining, Ma Chenyue, Chan Mansun. A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs[J]. Journal of Semiconductors, 2009, 30(2): 024001. doi: 10.1088/1674-4926/30/2/024001 ****He J, Zhang J, Zhang L N, Ma C Y, Chan M S. A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs[J]. J. Semicond., 2009, 30(2): 024001. doi: 10.1088/1674-4926/30/2/024001.
      Citation:
      He Jin, Zhang Jian, Zhang Lining, Ma Chenyue, Chan Mansun. A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs[J]. Journal of Semiconductors, 2009, 30(2): 024001. doi: 10.1088/1674-4926/30/2/024001 ****
      He J, Zhang J, Zhang L N, Ma C Y, Chan M S. A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs[J]. J. Semicond., 2009, 30(2): 024001. doi: 10.1088/1674-4926/30/2/024001.
      shu

      A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs

      DOI: 10.1088/1674-4926/30/2/024001

      • The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School,Shenzhen 518055, China

      • TSRC and ULTRAS Team, EECS, Peking University, Beijing 100871, China

      • Department of Electronics and Computer Engineering, Hong Kong University

      • TSRC and ULTRAS Team, EECS, Peking University, Beijing 100871, China

      • TSRC and ULTRAS Team, EECS, Peking University, Beijing 100871, China

      • TSRC and ULTRAS Team, EECS, Peking University, Beijing 100871, China

      • Department of Electronics and Computer Engineering, Hong Kong University of Science & Technology,Hong Kong, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-05-20
      • Revised Date: 2008-10-26
      • Published Date: 2009-02-16

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