| Citation: |
Liu Hongxia, Zhang Heming, Zhang Zhiyong. Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction[J]. Journal of Semiconductors, 2009, 30(5): 052002. doi: 10.1088/1674-4926/30/5/052002
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Liu H X, Zhang H M, Zhang Z Y. Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction[J]. J. Semicond., 2009, 30(5): 052002. doi: 10.1088/1674-4926/30/5/052002.
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Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction
DOI: 10.1088/1674-4926/30/5/052002
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Abstract
A two-probe system of the heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) was established based on its optimized structure. By using a method combining nonequilibrium Green's function (NEGF) with density functional theory (DFT), the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital (HOMO) has a higher electron density on the CNT section and the lowest unoccupied molecular orbital (LUMO) mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are +1.8 and -2.2 V, respectively. -
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