Citation: |
Zhuo Shiyi, Xiong Yuying, Gu Min. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(5): 052004. doi: 10.1088/1674-4926/30/5/052004
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Zhuo S Y, Xiong Y Y, Gu M. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering[J]. J. Semicond., 2009, 30(5): 052004. doi: 10.1088/1674-4926/30/5/052004.
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Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering
DOI: 10.1088/1674-4926/30/5/052004
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Abstract
ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency mag-netron sputtering on Si (111) substrates, with targets of ZnO and Zn0.99Cu0.01, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Znidefect in the films, and the valence state of Cu is 1+. The X-ray diffrac-tion measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along thec-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.-
Keywords:
- RF magnetron sputtering
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References
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Proportional views