
SEMICONDUCTOR DEVICES
Li Kun, Teng Jianfu and Xuan Xiuwei
Abstract: Using a Volterra series, an explicit formula is derived for the connection between input 3rd-order intercept point and collector bias current (ICQ) in a common–emitter bipolar junction transistor amplifier. The analysis indicates that the larger ICQ is, the more linear the amplifier is. Furthermore, this has been verified by experiment. This study also integrates a method called dynamic bias current for expanding the dynamic range of an LNA (low noise amplifier) as an application of the analysis result obtained above. IMR3 (3rd-order intermodulation rate) is applied to evaluate the LNA's performance with and without adopting this method in this study.
Key words: IIP3
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Received: 18 August 2015 Revised: 16 August 2010 Online: Published: 01 December 2010
Citation: |
Li Kun, Teng Jianfu, Xuan Xiuwei. Effect of collector bias current on the linearity of common-emitter BJT amplifiers[J]. Journal of Semiconductors, 2010, 31(12): 124012. doi: 10.1088/1674-4926/31/12/124012
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Li K, Teng J F, Xuan X W. Effect of collector bias current on the linearity of common-emitter BJT amplifiers[J]. J. Semicond., 2010, 31(12): 124012. doi: 10.1088/1674-4926/31/12/124012.
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