| Citation: |
Jin Rui, Liu Xiaoyan, Du Gang, Kang Jinfeng, Han Ruqi. Effect of trapped charge accumulation on the retention of charge trapping memory[J]. Journal of Semiconductors, 2010, 31(12): 124016. doi: 10.1088/1674-4926/31/12/124016
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Jin R, Liu X Y, Du G, Kang J F, Han R Q. Effect of trapped charge accumulation on the retention of charge trapping memory[J]. J. Semicond., 2010, 31(12): 124016. doi: 10.1088/1674-4926/31/12/124016.
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Effect of trapped charge accumulation on the retention of charge trapping memory
DOI: 10.1088/1674-4926/31/12/124016
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Abstract
The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. A recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS.-
Keywords:
- charge accumulation
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References
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Proportional views
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