Effect of trapped charge accumulation on the retention of charge trapping memory

Jin Rui; Liu Xiaoyan; Du Gang; Kang Jinfeng; Han Ruqi

doi:10.1088/1674-4926/31/12/124016

J. Semicond. > 2010, Volume 31 > Issue 12 > 124016

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Effect of trapped charge accumulation on the retention of charge trapping memory

Jin Rui, Liu Xiaoyan, Du Gang, Kang Jinfeng and Han Ruqi

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DOI: 10.1088/1674-4926/31/12/124016

Abstract: The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. A recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS.

Key words: charge accumulation

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Jin Rui, Liu Xiaoyan, Du Gang, Kang Jinfeng, Han Ruqi. Effect of trapped charge accumulation on the retention of charge trapping memory[J]. Journal of Semiconductors, 2010, 31(12): 124016. doi: 10.1088/1674-4926/31/12/124016

Jin R, Liu X Y, Du G, Kang J F, Han R Q. Effect of trapped charge accumulation on the retention of charge trapping memory[J]. J. Semicond., 2010, 31(12): 124016. doi: 10.1088/1674-4926/31/12/124016.

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Received: 18 August 2015 Revised: 29 July 2010 Online: Published: 01 December 2010

The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. A recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS.

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