J. Semicond. > 2010, Volume 31 > Issue 3 > 034003

SEMICONDUCTOR DEVICES

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Wang Zhikuan and Yang Yonghui

+ Author Affiliations
DOI: 10.1088/1674-4926/31/3/034003

PDF

Abstract: The characteristics of radiation damage under high or low dose rate in lateral PNP transistors with heavily or lightly doped emitter is investigated in this article. Experimental results show that as total dose increases, the base current of transistors would increase and current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects especially the double effects of oxide trapped charge is discussed in heavily or lightly doped transistors. Finally, through comparison between high- and low-dose-rate response of collector current (IC) in heavily doped LPNP transistors, the abnormal effect can be attribute to the annealing of oxide trapped charge. the response of collector current, IC, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.

Key words: doping concentration, lateral PNP transistors, radiation damage, dose rates

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3745 Times PDF downloads: 1690 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 18 October 2009 Online: Published: 01 March 2010

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Wang Zhikuan, Yang Yonghui. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. Journal of Semiconductors, 2010, 31(3): 034003. doi: 10.1088/1674-4926/31/3/034003 ****Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Wang Z K, Yang Y H. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. J. Semicond., 2010, 31(3): 034003. doi: 10.1088/1674-4926/31/3/034003.
      Citation:
      Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Wang Zhikuan, Yang Yonghui. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. Journal of Semiconductors, 2010, 31(3): 034003. doi: 10.1088/1674-4926/31/3/034003 ****
      Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Wang Z K, Yang Y H. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. J. Semicond., 2010, 31(3): 034003. doi: 10.1088/1674-4926/31/3/034003.

      Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

      DOI: 10.1088/1674-4926/31/3/034003
      • Received Date: 2015-08-18
      • Accepted Date: 2009-09-15
      • Revised Date: 2009-10-18
      • Published Date: 2010-02-08

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return