Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

doi:10.1088/1674-4926/31/3/034003

J. Semicond. > 2010, Volume 31 > Issue 3 > 034003

SEMICONDUCTOR DEVICES

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Wang Zhikuan and Yang Yonghui

+ Author Affiliations

DOI: 10.1088/1674-4926/31/3/034003

Abstract: The characteristics of radiation damage under high or low dose rate in lateral PNP transistors with heavily or lightly doped emitter is investigated in this article. Experimental results show that as total dose increases, the base current of transistors would increase and current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects especially the double effects of oxide trapped charge is discussed in heavily or lightly doped transistors. Finally, through comparison between high- and low-dose-rate response of collector current (IC) in heavily doped LPNP transistors, the abnormal effect can be attribute to the annealing of oxide trapped charge. the response of collector current, IC, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.

Key words: doping concentration, lateral PNP transistors, radiation damage, dose rates

1	Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping Yong Chen, Yang Zhao, Qiufeng Ye, Zema Chu, Zhigang Yin, et al. Journal of Semiconductors, 2019, 40(12): 122201. doi: 10.1088/1674-4926/40/12/122201
2	Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes Hui Wang, Yingxi Niu, Fei Yang, Yong Cai, Zehong Zhang, et al. Journal of Semiconductors, 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006
3	Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT Devashish Pandey, T.R. Lenka Journal of Semiconductors, 2014, 35(10): 104001. doi: 10.1088/1674-4926/35/10/104001
4	A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection Jizhi Liu, Zhiwei Liu, Ze Jia, Juin. J Liou Journal of Semiconductors, 2014, 35(6): 064010. doi: 10.1088/1674-4926/35/6/064010
5	Chaotic dynamics dependence on doping density in weakly coupled GaAs/AlAs superlattices Yang Gui, Li Yuanhong, Zhang Fengying, Li Yuqi Journal of Semiconductors, 2012, 33(9): 092002. doi: 10.1088/1674-4926/33/9/092002
6	Radiation effect on the optical and electrical properties of CdSe(In)/p-Si heterojunction photovoltaic solar cells M. Ashry, S. Fares Journal of Semiconductors, 2012, 33(10): 102001. doi: 10.1088/1674-4926/33/10/102001
7	Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells Muhammad Nawaz, Ashfaq Ahmad Journal of Semiconductors, 2012, 33(4): 042001. doi: 10.1088/1674-4926/33/4/042001
8	As₂S₈ planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features Zou Liner, Wang Gouri, Shen Yun, Chen Baoxue, Mamoru Iso, et al. Journal of Semiconductors, 2011, 32(11): 112004. doi: 10.1088/1674-4926/32/11/112004
9	Method of simulation of low dose rate for total dose effect in 0.18 μm CMOS technology He Baoping, Yao Zhibin, Guo Hongxia, Luo Yinhong, Zhang Fengqi, et al. Journal of Semiconductors, 2009, 30(7): 074009. doi: 10.1088/1674-4926/30/7/074009
10	Annealing behavior of radiation damage in JFET-input operational amplifiers Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Guo Qi, et al. Journal of Semiconductors, 2009, 30(5): 055001. doi: 10.1088/1674-4926/30/5/055001
11	A Novel Ideal Ohmic Contact SiGeC/Si Power Diode with Graded Doping Concentration Liu Jing, Gao Yong, Yang Yuan, Wang Cailin Chinese Journal of Semiconductors , 2007, 28(3): 342-348.
12	Decarbonization and Decolorization of Large Sapphire Crystals Grown by the Temperature Gradient Technique Xu Jun, Zhou Guoqing, Deng Peizhen, Si Jiliang, Qian Xiaobo, et al. Chinese Journal of Semiconductors , 2006, 27(2): 245-248.
13	Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth Chen Jun, Wang Jianfeng, Wang Hui, Zhao Degang, Zhu Jianjun, et al. Chinese Journal of Semiconductors , 2006, 27(3): 419-424.
14	Lateral Oxidation in Vertical Cavity Surface Emitting Lasers Liu Wenli, Hao Yongqin, Wang Yuxia, Jiang Xiaoguang, Feng Yuan, et al. Chinese Journal of Semiconductors , 2006, 27(8): 1351-1354.
15	An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers Huo Fengwei, Kang Renke, Guo Dongming, Zhao Fuling, Jin Zhuji, et al. Chinese Journal of Semiconductors , 2006, 27(3): 506-510.
16	Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT Niu Zhenhong, Guo Qi, Ren Diyuan, Liu Gang, Gao Song, et al. Chinese Journal of Semiconductors , 2006, 27(9): 1608-1611.
17	Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages Jia Yunpeng, Zhang Bin, Sun Yuechen, Kang Baowei Chinese Journal of Semiconductors , 2006, 27(2): 294-297.
18	Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC Xiao Zhiqiang, Hong Genshen, Zhang Bo, Liu Zhongli Chinese Journal of Semiconductors , 2006, 27(10): 1750-1754.
19	A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region Lu Shengli, Sun Zhilin, Sun Weifeng, Shi Longxing Chinese Journal of Semiconductors , 2005, 26(12): 2286-2289.
20	Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides Zheng Zhongshan, Liu Zhongli, Zhang Guoqiang, Li Ning, Li Guohua, et al. Chinese Journal of Semiconductors , 2005, 26(5): 862-866.

Search

GET CITATION

Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Wang Zhikuan, Yang Yonghui. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. Journal of Semiconductors, 2010, 31(3): 034003. doi: 10.1088/1674-4926/31/3/034003

Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Wang Z K, Yang Y H. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. J. Semicond., 2010, 31(3): 034003. doi: 10.1088/1674-4926/31/3/034003.

Export: BibTex EndNote

Article Metrics

Article views: 3804 Times PDF downloads: 1690 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 18 October 2009 Online: Published: 01 March 2010

The characteristics of radiation damage under high or low dose rate in lateral PNP transistors with heavily or lightly doped emitter is investigated in this article. Experimental results show that as total dose increases, the base current of transistors would increase and current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects especially the double effects of oxide trapped charge is discussed in heavily or lightly doped transistors. Finally, through comparison between high- and low-dose-rate response of collector current (IC) in heavily doped LPNP transistors, the abnormal effect can be attribute to the annealing of oxide trapped charge. the response of collector current, IC, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

DOI: 10.1088/1674-4926/31/3/034003

Abstract

References

Proportional views

Catalog

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

DOI: 10.1088/1674-4926/31/3/034003

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content