| Citation: |
Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Wang Zhikuan, Yang Yonghui. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. Journal of Semiconductors, 2010, 31(3): 034003. doi: 10.1088/1674-4926/31/3/034003
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Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Wang Z K, Yang Y H. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors[J]. J. Semicond., 2010, 31(3): 034003. doi: 10.1088/1674-4926/31/3/034003.
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Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors
DOI: 10.1088/1674-4926/31/3/034003
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Abstract
The characteristics of radiation damage under high or low dose rate in lateral PNP transistors with heavily or lightly doped emitter is investigated in this article. Experimental results show that as total dose increases, the base current of transistors would increase and current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects especially the double effects of oxide trapped charge is discussed in heavily or lightly doped transistors. Finally, through comparison between high- and low-dose-rate response of collector current (IC) in heavily doped LPNP transistors, the abnormal effect can be attribute to the annealing of oxide trapped charge. the response of collector current, IC, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. -
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