Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs

Jiang Huaping; Chen Wanjun; Liu Chuang; Rao Zugang; Dong Bin; Zhang Bo

doi:10.1088/1674-4926/32/12/124004

J. Semicond. > 2011, Volume 32 > Issue 12 > 124004

SEMICONDUCTOR DEVICES

Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs

Jiang Huaping, Chen Wanjun, Liu Chuang, Rao Zugang, Dong Bin and Zhang Bo

+ Author Affiliations

DOI: 10.1088/1674-4926/32/12/124004

Abstract: A linearly graded-doping junction termination extension (LG-JTE) for 3.3-kV-class insulated gate bipolar transistors (IGBTs) was proposed and experimentally investigated. Unlike conventional multi-implantation utilizing more than one photolithography step, a single mask with injection window widths varied linearly away from the main junction to the edge was implemented in this proposed structure. Based on the simulation results, IGBTs with LG-JTE structures were successfully fabricated on the domestic process platform. The fabricated devices exhibited a 3.7 kV forward-blocking voltage, which is close to the theoretical value of an ideal parallel plane case. This is the first success in fabrication 3.3 kV-class IGBT in a domestic application.

Key words: high voltage IGBT

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Jiang Huaping, Chen Wanjun, Liu Chuang, Rao Zugang, Dong Bin, Zhang Bo. Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs[J]. Journal of Semiconductors, 2011, 32(12): 124004. doi: 10.1088/1674-4926/32/12/124004

Jiang H P, Chen W J, Liu C, Rao Z G, Dong B, Zhang B. Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs[J]. J. Semicond., 2011, 32(12): 124004. doi: 10.1088/1674-4926/32/12/124004.

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Received: 20 August 2015 Revised: 11 July 2011 Online: Published: 01 December 2011

A linearly graded-doping junction termination extension (LG-JTE) for 3.3-kV-class insulated gate bipolar transistors (IGBTs) was proposed and experimentally investigated. Unlike conventional multi-implantation utilizing more than one photolithography step, a single mask with injection window widths varied linearly away from the main junction to the edge was implemented in this proposed structure. Based on the simulation results, IGBTs with LG-JTE structures were successfully fabricated on the domestic process platform. The fabricated devices exhibited a 3.7 kV forward-blocking voltage, which is close to the theoretical value of an ideal parallel plane case. This is the first success in fabrication 3.3 kV-class IGBT in a domestic application.

Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs

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Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs

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