| Citation: |
Wang Hongrui, Yang Dongxu, Zhang Li, Zhang Lei, Yu Zhiping. Modeling and characterization of shielded low loss CPWs on 65 nm node silicon[J]. Journal of Semiconductors, 2011, 32(6): 064009. doi: 10.1088/1674-4926/32/6/064009
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Wang H R, Yang D X, Zhang L, Zhang L, Yu Z P. Modeling and characterization of shielded low loss CPWs on 65 nm node silicon[J]. J. Semicond., 2011, 32(6): 064009. doi: 10.1088/1674-4926/32/6/064009.
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Modeling and characterization of shielded low loss CPWs on 65 nm node silicon
DOI: 10.1088/1674-4926/32/6/064009
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Abstract
Coplanar waveguides (CPWs) are promising candidates for high quality passive devices in millimeter-wave frequency bands. In this paper, CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology. A physical-based model is proposed to describe the frequency-dependent per-unit-length L, C, R and G parameters. Starting with a basic CPW structure, the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model. The accuracy of the model is confirmed by experimental results.-
Keywords:
- CMOS
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References
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Proportional views
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