Abstract: An improved inductor layout with non-uniform metal width and non-uniform spacing is proposed to increase the quality factor (Q factor). For this inductor layout, from outer coil to inner coil, the metal width is reduced by an arithmetic-progression step, while the metal spacing is increased by a geometric-progression step. An improved layout with variable width and changed spacing is of benefit to the Q factor of RF spiral inductor improvement (approximately 42.86%), mainly due to the suppression of eddy-current loss by weakening the current crowding effect in the center of the spiral inductor. In order to increase the Q factor further, for the novel inductor, a patterned ground shield is used with optimized layout together. The results indicate that, in the range of 0.5 to 16 GHz, the Q factor of the novel inductor is at an optimum, which improves by 67% more than conventional inductors with uniform geometry dimensions (equal width and equal spacing), is enhanced by nearly 23% more than a PGS inductor with uniform geometry dimensions, and improves by almost 20% more than an inductor with an improved layout.

Key words: inductor layout optimization, variable metal width and spacing, integrated RF inductor, silicon substrate