Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer

Zheng Hong; Cheng Xiaoman; Tian Haijun; Zhao Geng

doi:10.1088/1674-4926/32/9/094005

J. Semicond. > 2011, Volume 32 > Issue 9 > 094005

SEMICONDUCTOR DEVICES

Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer

Zheng Hong, Cheng Xiaoman, Tian Haijun and Zhao Geng

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DOI: 10.1088/1674-4926/32/9/094005

Abstract: We have investigated the properties of C60-based organic field effect transistors (OFETs) with a tris(8-hydroxyquinoline) aluminum (Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film. The peak field effect mobility is increased to 1.28 × 10^-2 cm²/(V.s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm. The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films.

Key words: organic field effect transistors, buffer layer, C60, Alq3, channel resistance

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Zheng Hong, Cheng Xiaoman, Tian Haijun, Zhao Geng. Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J]. Journal of Semiconductors, 2011, 32(9): 094005. doi: 10.1088/1674-4926/32/9/094005

Zheng H, Cheng X M, Tian H J, Zhao G. Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J]. J. Semicond., 2011, 32(9): 094005. doi: 10.1088/1674-4926/32/9/094005.

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Received: 20 August 2015 Revised: 10 May 2011 Online: Published: 01 September 2011

We have investigated the properties of C60-based organic field effect transistors (OFETs) with a tris(8-hydroxyquinoline) aluminum (Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film. The peak field effect mobility is increased to 1.28 × 10^-2 cm²/(V.s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm. The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films.

Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer

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