
SEMICONDUCTOR DEVICES
Abstract: We have investigated the properties of C60-based organic field effect transistors (OFETs) with a tris(8-hydroxyquinoline) aluminum (Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film. The peak field effect mobility is increased to 1.28 × 10-2 cm2/(V.s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm. The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films.
Key words: organic field effect transistors, buffer layer, C60, Alq3, channel resistance
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Article views: 3580 Times PDF downloads: 1990 Times Cited by: 0 Times
Received: 20 August 2015 Revised: 10 May 2011 Online: Published: 01 September 2011
Citation: |
Zheng Hong, Cheng Xiaoman, Tian Haijun, Zhao Geng. Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J]. Journal of Semiconductors, 2011, 32(9): 094005. doi: 10.1088/1674-4926/32/9/094005
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Zheng H, Cheng X M, Tian H J, Zhao G. Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J]. J. Semicond., 2011, 32(9): 094005. doi: 10.1088/1674-4926/32/9/094005.
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