J. Semicond. > 2011, Volume 32 > Issue 9 > 094005

SEMICONDUCTOR DEVICES

Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer

Zheng Hong, Cheng Xiaoman, Tian Haijun and Zhao Geng

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DOI: 10.1088/1674-4926/32/9/094005

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Abstract: We have investigated the properties of C60-based organic field effect transistors (OFETs) with a tris(8-hydroxyquinoline) aluminum (Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film. The peak field effect mobility is increased to 1.28 × 10-2 cm2/(V.s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm. The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films.

Key words: organic field effect transistorsbuffer layerC60Alq3channel resistance

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    Received: 20 August 2015 Revised: 10 May 2011 Online: Published: 01 September 2011

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      Zheng Hong, Cheng Xiaoman, Tian Haijun, Zhao Geng. Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J]. Journal of Semiconductors, 2011, 32(9): 094005. doi: 10.1088/1674-4926/32/9/094005 ****Zheng H, Cheng X M, Tian H J, Zhao G. Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J]. J. Semicond., 2011, 32(9): 094005. doi: 10.1088/1674-4926/32/9/094005.
      Citation:
      Zheng Hong, Cheng Xiaoman, Tian Haijun, Zhao Geng. Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J]. Journal of Semiconductors, 2011, 32(9): 094005. doi: 10.1088/1674-4926/32/9/094005 ****
      Zheng H, Cheng X M, Tian H J, Zhao G. Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J]. J. Semicond., 2011, 32(9): 094005. doi: 10.1088/1674-4926/32/9/094005.

      Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer

      DOI: 10.1088/1674-4926/32/9/094005
      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-03-01
      • Revised Date: 2011-05-10
      • Published Date: 2011-08-31

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