J. Semicond. > 2011, Volume 32 > Issue 9 > 094007
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SEMICONDUCTOR DEVICES

Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer

Cai Daolin, Li Ping, Zhai Yahong, Song Zhitang and Chen Houpeng

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DOI: 10.1088/1674-4926/32/9/094007

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Abstract: Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been deposited on a p-type Si substrate separated by a polycrystalline silicon/SiO2 stacked buffer layer. The X-ray diffraction peaks of the PZT thin films prepared on the polycrystalline silicon annealed at different temperatures were measured. In addition, the polarization of the Pt/PZT/polycrystalline silicon capacitor has been investigated. The memory capacitor of the metal/ferroelectric/polycrystalline silicon/SiO2/semiconductor structure annealed at 650 ℃ exhibits a clockwise capacitance-voltage hysteresis loop due to the ferroelectric polarization of the PZT thin film. The memory window increases with increasing the area coupling ratio between the SiO2 capacitor and the PZT capacitor.

Key words: capacitor

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    Received: 20 August 2015 Revised: 05 May 2011 Online: Published: 01 September 2011

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      Article Navigation >  Journal of Semiconductors  > 2011  >  32(9): 094007
      Cai Daolin, Li Ping, Zhai Yahong, Song Zhitang, Chen Houpeng. Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer[J]. Journal of Semiconductors, 2011, 32(9): 094007. doi: 10.1088/1674-4926/32/9/094007 ****Cai D L, Li P, Zhai Y H, Song Z T, Chen H P. Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer[J]. J. Semicond., 2011, 32(9): 094007. doi: 10.1088/1674-4926/32/9/094007.
      Citation:
      Cai Daolin, Li Ping, Zhai Yahong, Song Zhitang, Chen Houpeng. Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer[J]. Journal of Semiconductors, 2011, 32(9): 094007. doi: 10.1088/1674-4926/32/9/094007 ****
      Cai D L, Li P, Zhai Y H, Song Z T, Chen H P. Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer[J]. J. Semicond., 2011, 32(9): 094007. doi: 10.1088/1674-4926/32/9/094007.
      shu

      Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer

      DOI: 10.1088/1674-4926/32/9/094007

      • State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-systems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-systems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      Funds:

      The National Basic Research Program of China (973 Program)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-03-10
      • Revised Date: 2011-05-05
      • Published Date: 2011-08-31

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