| Citation: |
Wu Dawei, Jia Rui, Ding Wuchang, Chen Chen, Wu Deqi, Chen Wei, Li Haofeng, Yue Huihui, Liu Xinyu. Optimization of Al2O3/SiNx stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells[J]. Journal of Semiconductors, 2011, 32(9): 094008. doi: 10.1088/1674-4926/32/9/094008
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Wu D W, Jia R, Ding W C, Chen C, Wu D Q, Chen W, Li H F, Yue H H, Liu X Y. Optimization of Al2O3/SiNx stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells[J]. J. Semicond., 2011, 32(9): 094008. doi: 10.1088/1674-4926/32/9/094008.
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Optimization of Al2O3/SiNx stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells
DOI: 10.1088/1674-4926/32/9/094008
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Abstract
In the case of N-type solar cells, the anti-reflection property, as one of the important factors to further improve the energy-conversion efficiency, has been optimized using a stacked Al2O3/SiNx layer. The effect of SiNx layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement. In the stacked Al2O3/SiNx layers, results demonstrated that the surface reflection property can be effectively optimized by adding a SiNx layer, leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.-
Keywords:
- antireflection coatings
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References
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