SEMICONDUCTOR INTEGRATED CIRCUITS
Dong Junrong, Huang Jie, Tian Chao, Yang Hao and Zhang Haiying
Abstract: A broadband frequency doubler using left-handed nonlinear transmission lines (LH NLTLs) based on MMIC technology is reported for the first time. The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4 × 0.8 mm2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power, the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz -6 dBm bandwidth. The experimental results were quite consistent with the simulated results. The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.
Key words: GaAs
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Received: 20 August 2015 Revised: 25 April 2011 Online: Published: 01 September 2011
| Citation: |
Dong Junrong, Huang Jie, Tian Chao, Yang Hao, Zhang Haiying. A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines[J]. Journal of Semiconductors, 2011, 32(9): 095003. doi: 10.1088/1674-4926/32/9/095003
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Dong J R, Huang J, Tian C, Yang H, Zhang H Y. A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines[J]. J. Semicond., 2011, 32(9): 095003. doi: 10.1088/1674-4926/32/9/095003.
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