| Citation: |
Rajiv Sharma, Sujata Pandey, Shail Bala Jain. Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs[J]. Journal of Semiconductors, 2012, 33(2): 024001. doi: 10.1088/1674-4926/33/2/024001
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R Sharma, S Pandey, S B Jain. Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs[J]. J. Semicond., 2012, 33(2): 024001. doi: 10.1088/1674-4926/33/2/024001.
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Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs
DOI: 10.1088/1674-4926/33/2/024001
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Abstract
A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale SOI MOSFETs. Investigation of device parameters like transconductance for double-gate fully depleted nanoscale SOI MOSFETs is also carried out. Finally this work is concluded by modeling the cut-off frequency, which is one of the main figures of merit for analog/RF performance for double-gate fully depleted nanoscale SOI MOSFETs. The results of the modeling are compared with those obtained by a 2D ATLAS device simulator to verify the accuracy of the proposed model. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] -
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