| Citation: |
Jiang Yibo, Zeng Chuanbin, Du Huan, Luo Jiajun, Han Zhengsheng. Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology[J]. Journal of Semiconductors, 2012, 33(3): 034006. doi: 10.1088/1674-4926/33/3/034006
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Jiang Y B, Zeng C B, Du H, Luo J J, Han Z S. Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology[J]. J. Semicond., 2012, 33(3): 034006. doi: 10.1088/1674-4926/33/3/034006.
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Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology
DOI: 10.1088/1674-4926/33/3/034006
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Abstract
This paper presents a new phenomenon, where the holding-voltage of a silicon-controlled rectifier acts as an electrostatic-discharge protection drift in diverse film thicknesses in silicon-on-insulator (SOI) technology. The phenomenon was demonstrated through fabricated chips in 0.18 μm SOI technology. The drift of the holding voltage was then simulated, and its mechanism is discussed comprehensively through ISE TCAD simulations.-
Keywords:
- holding-voltage drift
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] -
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