| Citation: |
Tang Zhaohuan, Hu Gangyi, Chen Guangbing, Tan Kaizhou, Liu Yong, Luo Jun, Xu Xueliang. A novel structure for improving the SEGR of a VDMOS[J]. Journal of Semiconductors, 2012, 33(4): 044002. doi: 10.1088/1674-4926/33/4/044002
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Tang Z H, Hu G Y, Chen G B, Tan K Z, Liu Y, Luo J, Xu X L. A novel structure for improving the SEGR of a VDMOS[J]. J. Semicond., 2012, 33(4): 044002. doi: 10.1088/1674-4926/33/4/044002.
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Abstract
The mechanism of single-event gate-rupture in an N-channel VDMOS in a space radiation environment was analyzed. Based on the mechanism, a novel structure of VDMOS for improving single-event gate-rupture is proposed, and the structure is simulated and it is demonstrated that it can improve a VDMOS SEGR threshold voltage by 120%. With this structure, the specific on-resistance value of a VDMOS is reduced by 15.5% as the breakdown voltage almost maintains the same value. As only one mask added, which is local oxidation of silicon instead of an active processing area, the new structure VDMOS it is easily fabricated. The novel structure can be widely used in high-voltage VDMOS in a space radiation environment. -
References
[1] [2] [3] [4] [5] [6] [7] -
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