Abstract: A 700 V BCD technology platform is presented for high voltage applications. An important feature is that all the devices have been realized by using a fully implanted technology in a p-type single crystal without an epitaxial or a buried layer. An economical manufacturing process, requiring only 10 masking steps, yields a broad range of MOS and bipolar components integrated on a common substrate, including 700 V nLDMOS, 200 V nLDMOS, 80 V nLDMOS, 60 V nLDMOS, 40 V nLDMOS, 700 V nJFET, and low voltage devices. A robust double RESURF nLDMOS with a breakdown voltage of 800 V and specific on-resistance of 206.2 mΩ·cm² is successfully optimized and realized. The results of this technology are low fabrication cost, simple process and small chip area for PIC products.

Key words: BCD technology, fully implanted technology, double RESURF, LDMOS