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J. Semicond. > 2013, Volume 34 > Issue 4 > 044009

SEMICONDUCTOR DEVICES

The resonance frequency shift in an SOI nano-waveguide microring resonator

Junbin Zang1, 2, Chenyang Xue1, 2, , Liping Wei1, 2, Chao Liu1, 2, Danfeng Cui1, 2, Yonghua Wang1, 2 and Wendong Zhang1, 2

+ Author Affiliations

 Corresponding author: Xue Chenyang, Email:xuechenyang@nuc.edu.cn

DOI: 10.1088/1674-4926/34/4/044009

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Abstract: To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systematically designed and fabricated. SiO2 insulating layers with different thicknesses were deposited for analysis of the frequency shift characteristics. By testing the resonance transmission spectrum power of this structure, it is found that there are blue shifts after SiO2 deposition, and the frequency shift value of a structure with a 500 nm SiO2 insulating layer deposited is 0.8 nm, that is 0.24 THz at the resonance point where wavelength is around 1550 nm. Taking advantage of this conclusion, efficient optical modulation is available by choosing different frequency band resonance wavelengths to narrow the frequency modulation range.

Key words: silicon-on-insulatormicroring resonatorelectro-optic modulatornanophotonic waveguide

Nonfullerene organic solar cells (NF-OSCs) have become a research hotspot, and the device efficiency has been constantly updated[1-14]. The efficiency of binary and ternary solar cells has exceeded 18%[15-17] and 19%[18], respectively. In the early study of OSCs, the development of organic acceptors lagged behind that of organic donors. In addition to the common fullerene acceptors PC61BM and PC71BM, there is growing interest in developing new electron acceptors. The two fullerene acceptors were derived from C60 and C70, which were chemically modified to improve the solubility. Later, Li et al. developed a C60 derivative ICBA[19] and a C70 derivative IC70BA[20]. Compared with PC61BM and PC71BM, the lowest unoccupied molecular orbital (LUMO) levels of these two acceptors increased by 0.17 and 0.19 eV, respectively. This is conducive to the increase of open-circuit voltage (Voc). At present, the development of fullerene acceptors is limited, the reason are as follows: (1) they show weak absorption in the visible region, which is not conducive to the full use of sunlight; (2) it is difficult to improve the absorption by the chemical modification; (3) difficult chemical synthesis and high cost; (4) it is difficult to control the morphology, and the aggregation easily takes place in thin films. The advantages of fullerene acceptors are also obvious, e.g., (1) fullerene acceptors can accept and transport electrons in three dimensions due to their delocalized LUMO; (2) high electron mobility. Perylene diimides (PDIs) have been widely used in biological imaging, and they are widely-studied non-fullerene acceptors. PDIs have many advantages, such as high electron mobility and high electron affinity[21]. In 1986, C. W. Tang of Kodak prepared two-layer OSCs by depositing copper phthalocyanine (CuPc) as the donor and perylene tetracarboxylic derivative (PV) as the accepter in vacuo, achieving a power conversion efficiency (PCE) of 1%[22]. PDI-based devices were made by solution processing, and the aggregation yielded micron-sized crystals. When the acceptors were blended with donors, large domains formed[23]. Since exciton diffusion length and life were limited, the domain size should be well controlled.

The solar cell parameters consist of Voc, short-circuit current density (Jsc) and fill factor (FF). PDIs have two drawbacks: (1) the low LUMO level leads to low Voc; (2) PDIs with rigid planar structure tend to form excessive aggregations, affecting the formation of uniform films. Thus, lifting LUMO level and constructing non-coplanar perylene monoimides (PMIs) to improve Voc and the morphology are effective strategies. PMI-based nonfullerene acceptors and the photovoltaic performance are summarized in Fig. 1 and Table 1. In 2015, a nonfullerene acceptor PMI-F-PMI with a fluorene core and two PMI arms was reported. It presented a lift-up LUMO level around –3.54 eV, which matches well with that of P3HT donor to yield high Voc. P3HT:PMI-F-PMI solar cells gave an efficiency of 2.3%, with a Voc of 0.98 V, a Jsc of 5.61 mA/cm2, and an FF of 42.0%[24]. Later, Li et al. used a polymer donor PTZ1, obtaining a PCE of 6.0%, with a Voc of 1.30 V, a Jsc of 7.0 mA/cm2, and an FF of 63.5%[25]. The favorable morphology, efficient exciton dissociation, balanced carrier mobilities, and reduced charge recombination also contributed to the increase of Voc.

Figure  1.  The chemical structures for PMI-based non-planar acceptors.
Table  1.  Materials energy levels and the performance for solar cells.
PMI acceptor Polymer donorVoc
(V)
Jsc
(mA/cm2)
FF
(%)
PCE
(%)
Ref.
NameLUMO (eV)HOMO (eV) NameLUMO (eV)HOMO (eV)
PMI-F-PMI–3.54–5.74 P3HT–2.74–4.760.985.6142.02.30[24]
–3.42–5.50PTZ1–3.34–5.311.307.063.56.0[25]
PMI-FF-PMI–3.74–5.80D18–3.58–5.621.416.0960.95.34[26]
P-oPh-P–3.97–6.38 PBDB-T–3.41–5.211.042.62401.08[28]
P3-Ph–4.13–6.220.691.70460.54
P-HexPh-P–3.85–6.401.129.97462.02
P-DeOPh-P–3.92–6.311.007.46433.17
DownLoad: CSV  | Show Table

It is important to understand the effect of different aromatic core on the photovoltaic performance. In 2022, Scharber et al. developed a non-planar acceptor PMI-FF-PMI, consisting of two PMI units bridged with a dihydroindeno[1,2-b]fluorene unit. PMI-FF-PMI:D18 solar cells gave a PCE of 5.34%, with a Voc of 1.41 V, a Jsc of 6.09 mA/cm2, and an FF of 60.9%[26]. The 1.41 V Voc is the highest record for solution-processed OSCs so far. Though producing a high Voc, the cells presented a relatively large nonradiative voltage loss (ΔVocnon-rad) of 0.25 V, which mainly resulted from the enhancement of spontaneous carrier generation and the decrease of charge carrier in CT state process[27]. More recently, Trimmel et al. developed three PMI dimers by changing the substitution position (para, meta or ortho) on the benzene ring. Compared with P-pPh-P and P-mPh-P and P3Ph, P-oPh-P showed better solubility and device efficiency. With introducing two alkyl chains or alkoxy chains onto the benzene ring in P-pPh-P, three new PMI dimers were obtained, namely P-MePh-P, P-HexPh-P, P-DeOPh-P. P-HexPh-P and P-DeOPh-P with long chains exhibited higher crystallinity than P-MePh-P, and P-DeOPh-P with alkoxy chains presented a favorable face-on orientation as indicated by GIWAXS, which is beneficial to charge transport. As a result, PBDB-T:P-DeOPh-P cells offered a PCE of 3.17%, with a Voc of 1.00 V, a Jsc of 7.46 mA/cm2, and an FF of 43.0%[28]. Tuning the linking units is a simple approach to develop high-performance PMI-based acceptors.

In short, the Voc and PCE for NF-OSCs can be enhanced via tailoring the molecular structures of NFAs and donors. In order to regulate the morphology of the blends, different aromatic cores were introduced into PMI-based acceptors. The LUMO energy levels should also be tuned to match that of the donors.

This work was supported by the Scientific Research Foundation of Education Department of Jilin Province (JJKH20220827KJ), Natural Science Foundation of Changchun Normal University, and Scientific Startup Fund of Changchun Normal University. L. Ding thanks the National Key Research and Development Program of China (2017YFA0206600) and the National Natural Science Foundation of China (51773045, 21772030, 51922032, and 21961160720) for financial support.



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[2]
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[4]
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[5]
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[6]
Preston K, Manipatruni S, Gondarenko A. Deposited silicon high-speed integrated electro-optic modulator. Opt Express, 2009, 17(7):5118 doi: 10.1364/OE.17.005118
[7]
Choi J M, Lee R K, Yariv A. Control of critical coupling in a ring resonator-fiber configuration:application to wavelength-selective switching, modulation, amplification, and oscillation. Opt Lett, 2001, 26:1236 doi: 10.1364/OL.26.001236
[8]
Zhang Yunxiao, Liao Zaiyi, Zhao Lingjuan, et al. A high-efficiency high-power evanescently coupled UTC-photodiode. Journal of Semiconductors, 2009, 30(4):044008 doi: 10.1088/1674-4926/30/4/044008
[9]
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[10]
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[11]
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[12]
Huang Q, Yu J, Chen S, et al. High Q microring resonator in silicon-on-insulator rib waveguide. Proc SPIE, 2007, 6838:68380J doi: 10.1117/12.760218
[13]
Xu Q, Fattal D, Beausoleil R G. Silicon microring resonators with 1.5-μ m radius. Opt Express, 2008, 16(6):4309 doi: 10.1364/OE.16.004309
[14]
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[15]
Yariv A. Critical coupling and its control in optical waveguide-ring resonator systems. IEEE Photonics Technol Lett, 2002, 14:483 doi: 10.1109/68.992585
Fig. 1.  Cross-sectional picture of a rib nano-waveguide ring resonator.

Fig. 2.  SEM and AFM images of the rib waveguide microring resonators with a radius of 15 μm.

Fig. 3.  Testing platform.

Fig. 4.  Measured transmission spectra of the ring resonator.

Fig. 5.  Simulated value of the effective coefficient ne by using Rsoft software.

Fig. 6.  Theoretical transmission spectra.

[1]
Miller D A B. Rationale and challenges for optical interconnects to electronic chips. Proc IEEE, 2000, 88(6):728 doi: 10.1109/5.867687
[2]
Shacham A, Bergman K, Carloni L P. Photonic networks-on-chip for future generations of chip multiprocessors. IEEE Trans Comput, 2008, 57(9):1246 doi: 10.1109/TC.2008.78
[3]
Yu Changliang, Mao Luhong, Xiao Xindong, et al. An approach to the optical interconnects made in standard CMOS process. Journal of Semiconductors, 2009, 30(5):055012 doi: 10.1088/1674-4926/30/5/055012
[4]
Huang Q, Yu Y, Yu J. Experimental investigation on submicron rib waveguide microring/racetrack resonators in silicon-on-insulator. Opt Commun, 2009, 282:22 doi: 10.1016/j.optcom.2008.09.052
[5]
Pernice W H P, Xiong C, Tang H X. High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics. Opt Express, 2012, 20(11):12261 doi: 10.1364/OE.20.012261
[6]
Preston K, Manipatruni S, Gondarenko A. Deposited silicon high-speed integrated electro-optic modulator. Opt Express, 2009, 17(7):5118 doi: 10.1364/OE.17.005118
[7]
Choi J M, Lee R K, Yariv A. Control of critical coupling in a ring resonator-fiber configuration:application to wavelength-selective switching, modulation, amplification, and oscillation. Opt Lett, 2001, 26:1236 doi: 10.1364/OL.26.001236
[8]
Zhang Yunxiao, Liao Zaiyi, Zhao Lingjuan, et al. A high-efficiency high-power evanescently coupled UTC-photodiode. Journal of Semiconductors, 2009, 30(4):044008 doi: 10.1088/1674-4926/30/4/044008
[9]
Levi A F J, Slusher R E, McCall S L, et al. Directional light coupling from microdisk lasers. Appl Phys Lett, 1993, 62(6):561 doi: 10.1063/1.108911
[10]
Ling T, Chen S L, Guo L J. Fabrication and characterization of high Q polymer micro-ring resonator and its application as a sensitive ultrasonic detector. Opt Express, 2011, 19(2):861 doi: 10.1364/OE.19.000861
[11]
De Vos K, Bartolozzi I, Schacht E. Silicon-on-insulator microring resonator for sensitive and label-free biosesing. Opt Express, 2007, 15(12):7610 doi: 10.1364/OE.15.007610
[12]
Huang Q, Yu J, Chen S, et al. High Q microring resonator in silicon-on-insulator rib waveguide. Proc SPIE, 2007, 6838:68380J doi: 10.1117/12.760218
[13]
Xu Q, Fattal D, Beausoleil R G. Silicon microring resonators with 1.5-μ m radius. Opt Express, 2008, 16(6):4309 doi: 10.1364/OE.16.004309
[14]
Bogaerts W, Baets R, Dumon P, et al. Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology. J Lightwave Technol, 2005, 23(1):401 doi: 10.1109/JLT.2004.834471
[15]
Yariv A. Critical coupling and its control in optical waveguide-ring resonator systems. IEEE Photonics Technol Lett, 2002, 14:483 doi: 10.1109/68.992585
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    Junbin Zang, Chenyang Xue, Liping Wei, Chao Liu, Danfeng Cui, Yonghua Wang, Wendong Zhang. The resonance frequency shift in an SOI nano-waveguide microring resonator[J]. Journal of Semiconductors, 2013, 34(4): 044009. doi: 10.1088/1674-4926/34/4/044009
    J B Zang, C Y Xue, L P Wei, C Liu, D F Cui, Y H Wang, W D Zhang. The resonance frequency shift in an SOI nano-waveguide microring resonator[J]. J. Semicond., 2013, 34(4): 044009. doi: 10.1088/1674-4926/34/4/044009.
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    Received: 10 December 2012 Revised: 01 January 2013 Online: Published: 01 April 2013

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      Junbin Zang, Chenyang Xue, Liping Wei, Chao Liu, Danfeng Cui, Yonghua Wang, Wendong Zhang. The resonance frequency shift in an SOI nano-waveguide microring resonator[J]. Journal of Semiconductors, 2013, 34(4): 044009. doi: 10.1088/1674-4926/34/4/044009 ****J B Zang, C Y Xue, L P Wei, C Liu, D F Cui, Y H Wang, W D Zhang. The resonance frequency shift in an SOI nano-waveguide microring resonator[J]. J. Semicond., 2013, 34(4): 044009. doi: 10.1088/1674-4926/34/4/044009.
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      Junbin Zang, Chenyang Xue, Liping Wei, Chao Liu, Danfeng Cui, Yonghua Wang, Wendong Zhang. The resonance frequency shift in an SOI nano-waveguide microring resonator[J]. Journal of Semiconductors, 2013, 34(4): 044009. doi: 10.1088/1674-4926/34/4/044009 ****
      J B Zang, C Y Xue, L P Wei, C Liu, D F Cui, Y H Wang, W D Zhang. The resonance frequency shift in an SOI nano-waveguide microring resonator[J]. J. Semicond., 2013, 34(4): 044009. doi: 10.1088/1674-4926/34/4/044009.

      The resonance frequency shift in an SOI nano-waveguide microring resonator

      DOI: 10.1088/1674-4926/34/4/044009
      Funds:

      the National Natural Science Foundation of China 61076111

      the National Scientific Instruments Basic Research Program of China 61127008

      Project supported by the National Natural Science Foundation of China (No. 61076111) and the National Scientific Instruments Basic Research Program of China (No. 61127008)

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      • Corresponding author: Xue Chenyang, Email:xuechenyang@nuc.edu.cn
      • Received Date: 2012-12-10
      • Revised Date: 2013-01-01
      • Published Date: 2013-04-01

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