Fig. 1.
Energy diagram of the quantum-dot intermediate-band solar cell showing the minibands formed in this structure and a slight CB degradation to form a quasicontinuum CB.
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Xiaosheng Qu, Sisi Zhang, Hongyin Bao, Liling Xiong. The effect of InAs quantum-dot size and interdot distance on GaInP/GaAs/GaInAs/Ge multi-junction tandem solar cells[J]. Journal of Semiconductors, 2013, 34(6): 062003. doi: 10.1088/1674-4926/34/6/062003
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X S Qu, S S Zhang, H Y Bao, L L Xiong. The effect of InAs quantum-dot size and interdot distance on GaInP/GaAs/GaInAs/Ge multi-junction tandem solar cells[J]. J. Semicond., 2013, 34(6): 062003. doi: 10.1088/1674-4926/34/6/062003.
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The effect of InAs quantum-dot size and interdot distance on GaInP/GaAs/GaInAs/Ge multi-junction tandem solar cells
DOI: 10.1088/1674-4926/34/6/062003
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Abstract
A metamorphic GaInP/GaAs/GaInAs/Ge multi-junction solar cell with InAs quantum dots is investigated, and the analytical expression of the energy conversion efficiency on the multi-junction tandem solar cell is derived using the detailed balance principle and the Kronig-Penney model. The influences of interdot distance, quantum-dot size and the intermediate band location on the energy conversion efficiency are studied. This shows that the maximum efficiency, as a function of quantum-dot size and distance, is about 60.15% under the maximum concentration for only one InAs/GaAs subcell, and is even up to 39.69% for the overall cell. In addition, other efficiency factors such as current mismatch, the formation of a quasicontinuum conduction band and concentrated light are examined. -
References
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