J. Semicond. > 2013, Volume 34 > Issue 7 > 074010
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SEMICONDUCTOR DEVICES

A low power discrete operation mode for punchthrough phototransistor

Quan Zhou, Shuxu Guo, Jingyi Song, Zhaohan Li, Guotong Du and Yuchun Chang

+ Author Affiliations

 Corresponding author: Chang Yuchun, Email:changyc@jlu.edu.cn

DOI: 10.1088/1674-4926/34/7/074010

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Abstract: This paper proposed a discrete operation mode for a punchthrough (PT) phototransistor, which is suitable for low power application, since the bias current is only necessary during the read-out phase. Moreover, simulation results show that with the new operation mode, the photocurrent is much larger than that of continuous operation mode. An ultra-high responsivity of 2×107A/W at 10-9 W/cm2 is obtained with a small detector size of 1 μm2. In CMOS image sensor applications, with an integration time of 10 ms, a normalized pixel responsivity of 220 V·m2/W·s·μm2 is obtained without any auxiliary amplifier.

Key words: punchthrough (PT) phototransistor, discrete operation mode, low power, high responsivity



[1]
Han Z T, Chu J K, Meng F T, et al. Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator. Journal of Semiconductors, 2009, 30(10):104008 doi: 10.1088/1674-4926/30/10/104008
[2]
Zhang Y X, Liao Z Y, Zhao L J, et al. A high-efficiency high-power evanescently coupled UTC-photodiode. Journal of Semiconductors, 2009, 30(4):044008 doi: 10.1088/1674-4926/30/4/044008
[3]
Chen B, Yang Y T, Chai C C, et al. Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes. Journal of Semiconductors, 2009, 30(4):054010
[4]
Abedin M N, Refaat T F, Suliima O V, et al. AlGaAsSb-InGaAsSb HPTs with high optical gain and wide dynamic range. IEEE Trans Electron Devices, 2004, 51(12):2013 doi: 10.1109/TED.2004.838328
[5]
Han D, Li G, Zhang Y, et al. Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor. IEEE Photonics Technol Lett, 1997, 9(10):1391 doi: 10.1109/68.623273
[6]
Luo H, Chang Y, Wang Y, et al. Ultrasensitive Si phototransistors with a punchthrough base. Appl Phys Lett, 2001, 79(6):773 doi: 10.1063/1.1390477
[7]
Liu X, Guo S, Chang Y, et al. Punchthrough enhanced phototransistor fabricated in standard CMOS process. IEEE Electron Device Lett, 2009, 30(3):272 doi: 10.1109/LED.2008.2011143
[8]
Zhou Q, Guo S, Chang Y, et al. High-dynamic-range photodetecting scheme based on PEPT with a large output swing. IEEE Trans Electron Devices, 2012, 59(5):1423 doi: 10.1109/TED.2012.2187658
[9]
Papadopoulou P, Georgoulas N, Thanailakis A, et al. An extensive study of the photocurrent amplification mechanism of silicon bulk-barrier diodes based on simulation and experimental results. Thin Solid Films, 2002, 415(1):276 http://www.sciencedirect.com/science/article/pii/S0040609002005485
[10]
Chen C Y. Theory of a modulated barrier photodiode, Appl Phys Lett, 1981, 39(12):15 http://adsabs.harvard.edu/abs/1981ApPhL..39..979C
[11]
http://www.datasheetcatalog.org/datasheet2/2/044ipph9289eg3l6qa3eadzds1fy.pdf. 1. 3 MPxl Rolling Shutter CMOS Image Sensor
[12]
Cremers B, Agarwa M. A high speed pipelined snapshot CMOS image sensor with 6.4 Gpixel/s data rate. International Image Sensor Workshop, 2009
Fig. 1.  (a) Cross-section of punchthrough phototransistor. (b) Charge distribution in depletion region. (c) Build-in electric field distribution. (d) Build-in potential distribution. (e) Linear potential distribution with bias voltage of $V_{\rm o}$. (f) Whole potential distribution.

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Fig. 2.  (a) Schematic of the proposed discrete operation mode. (b) Voltage with pulse width. (c) Photocurrent response.

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Fig. 3.  (a) Potential of base region with different light intensity. (b) Potential variation.

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Fig. 4.  Photocurrent response with different light intensity in discrete operation mode. (a) 10$^{-9}$ W/cm$^{2}$. (b) 10$^{-7}$ W/cm$^{2}$. (c) 10$^{-5}$ W/cm$^{2}$. (d) 10$^{-3}$ W/cm$^{2}$. (e) 10$^{-1}$ W/cm$^{2}$.

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Fig. 5.  Potential variation in different integration times.

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Table 1.   Pixel voltage responsivity comparisons.
[1]
Han Z T, Chu J K, Meng F T, et al. Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator. Journal of Semiconductors, 2009, 30(10):104008 doi: 10.1088/1674-4926/30/10/104008
[2]
Zhang Y X, Liao Z Y, Zhao L J, et al. A high-efficiency high-power evanescently coupled UTC-photodiode. Journal of Semiconductors, 2009, 30(4):044008 doi: 10.1088/1674-4926/30/4/044008
[3]
Chen B, Yang Y T, Chai C C, et al. Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes. Journal of Semiconductors, 2009, 30(4):054010
[4]
Abedin M N, Refaat T F, Suliima O V, et al. AlGaAsSb-InGaAsSb HPTs with high optical gain and wide dynamic range. IEEE Trans Electron Devices, 2004, 51(12):2013 doi: 10.1109/TED.2004.838328
[5]
Han D, Li G, Zhang Y, et al. Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor. IEEE Photonics Technol Lett, 1997, 9(10):1391 doi: 10.1109/68.623273
[6]
Luo H, Chang Y, Wang Y, et al. Ultrasensitive Si phototransistors with a punchthrough base. Appl Phys Lett, 2001, 79(6):773 doi: 10.1063/1.1390477
[7]
Liu X, Guo S, Chang Y, et al. Punchthrough enhanced phototransistor fabricated in standard CMOS process. IEEE Electron Device Lett, 2009, 30(3):272 doi: 10.1109/LED.2008.2011143
[8]
Zhou Q, Guo S, Chang Y, et al. High-dynamic-range photodetecting scheme based on PEPT with a large output swing. IEEE Trans Electron Devices, 2012, 59(5):1423 doi: 10.1109/TED.2012.2187658
[9]
Papadopoulou P, Georgoulas N, Thanailakis A, et al. An extensive study of the photocurrent amplification mechanism of silicon bulk-barrier diodes based on simulation and experimental results. Thin Solid Films, 2002, 415(1):276 http://www.sciencedirect.com/science/article/pii/S0040609002005485
[10]
Chen C Y. Theory of a modulated barrier photodiode, Appl Phys Lett, 1981, 39(12):15 http://adsabs.harvard.edu/abs/1981ApPhL..39..979C
[11]
http://www.datasheetcatalog.org/datasheet2/2/044ipph9289eg3l6qa3eadzds1fy.pdf. 1. 3 MPxl Rolling Shutter CMOS Image Sensor
[12]
Cremers B, Agarwa M. A high speed pipelined snapshot CMOS image sensor with 6.4 Gpixel/s data rate. International Image Sensor Workshop, 2009

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    Received: 19 November 2012 Revised: 22 February 2013 Online: Published: 01 July 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(7): 074010
      Quan Zhou, Shuxu Guo, Jingyi Song, Zhaohan Li, Guotong Du, Yuchun Chang. A low power discrete operation mode for punchthrough phototransistor[J]. Journal of Semiconductors, 2013, 34(7): 074010. doi: 10.1088/1674-4926/34/7/074010 ****Q Zhou, S X Guo, J Y Song, Z H Li, G T Du, Y C Chang. A low power discrete operation mode for punchthrough phototransistor[J]. J. Semicond., 2013, 34(7): 074010. doi: 10.1088/1674-4926/34/7/074010.
      Citation:
      Quan Zhou, Shuxu Guo, Jingyi Song, Zhaohan Li, Guotong Du, Yuchun Chang. A low power discrete operation mode for punchthrough phototransistor[J]. Journal of Semiconductors, 2013, 34(7): 074010. doi: 10.1088/1674-4926/34/7/074010 ****
      Q Zhou, S X Guo, J Y Song, Z H Li, G T Du, Y C Chang. A low power discrete operation mode for punchthrough phototransistor[J]. J. Semicond., 2013, 34(7): 074010. doi: 10.1088/1674-4926/34/7/074010.
      shu

      A low power discrete operation mode for punchthrough phototransistor

      DOI: 10.1088/1674-4926/34/7/074010

      • State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

      Funds:

      the National Natural Science Foundation of China 61274023

      the New Century Excellent Talents Support Program of the Ministry of Education, the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory ZHD201204

      Project supported by the National Natural Science Foundation of China (Nos. 61076046, 61274023), the New Century Excellent Talents Support Program of the Ministry of Education, the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No. ZHD201204)

      the National Natural Science Foundation of China 61076046

      More Information
      • Corresponding author: Chang Yuchun, Email:changyc@jlu.edu.cn
      • Received Date: 2012-11-19
      • Revised Date: 2013-02-22
      • Published Date: 2013-07-01

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