A simulation-based proposed high-<i>k</i> heterostructure AlGaAs/Si junctionless n-type tunnel FET

Shiromani Balmukund Rahi; Bahniman Ghosh; Pranav Asthana

doi:10.1088/1674-4926/35/11/114005

J. Semicond. > 2014, Volume 35 > Issue 11 > 114005

SEMICONDUCTOR DEVICES

A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

Shiromani Balmukund Rahi¹, Bahniman Ghosh^2, and Pranav Asthana¹

+ Author Affiliations

Corresponding author: Bahniman Ghosh, Email:bghosh@utexas.edu

DOI: 10.1088/1674-4926/35/11/114005

Abstract: We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate=4.2 eV, gate1=5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4×10^-6 A/μm, the off current remains as low as 9.1×10^-14 A/μm. So I_ON/I_OFF ratio of ≃ 10⁸ is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO₂ gate material.

Key words: band-to-band tunneling (BTBT), TFET, heterostructure junctionless tunnel field effect transistor (HJL-TFET), I_ON/I_OFF ratio subthreshold slope, VLSI

References

[1]	Kanungo S, Rahaman H, Gupta P S. A detail simulation study on extended source ultra-thin body double-gated tunnel FET. IEEE 5th International Conference on Computers and Devices for Communication (CODEC), 2012 http://ieeexplore.ieee.org/document/6509242/
[2]	Wang P Y, Tusi B Y. Si_1-xGe_x epitaxial tunnel layer structure for P-channel tunnel FET improvement. IEEE Trans Electron Devices, 2013, 60(12):4098 doi: 10.1109/TED.2013.2287633
[3]	Ganapathi K, Yoon Y, Salahuddin S. Analysis of InAs vertical and lateral band-to-band tunneling transistors:leveraging vertical tunneling for improved performance. Appl Phys Lett, 2010, 97(3):033504 doi: 10.1063/1.3466908
[4]	Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature, 2011, 479:329 doi: 10.1038/nature10679
[5]	Mishra R, Ghosh B, Banarjee S K. Device and circuit performance evaluation and improvement of SiGe tunnel FETs. IEEE International Conference on Enabling Science and Nanotechnology (ESciNano), 2011 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5701031
[6]	Mamilla B K, Naiyar S, Mishra R, et al. A Ⅲ-Ⅴ group tunnel FETs with good switching characteristics and their circuit performance. International Journal of Electronics Communication and Computer Technology, 2011, 1(2):26 http://www.oalib.com/paper/2077180
[7]	Ghosh B, Akram M W. Junctionless tunnel field effect transistor. IEEE Electron Device Lett, 2013, 34(5):584 doi: 10.1109/LED.2013.2253752
[8]	Bal P, Akram M W, Mondal P, et al. Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET). J Comput Electron, 2013, 12:782 doi: 10.1007/s10825-013-0483-6
[9]	Asthana P K, Ghosh B, Goswami Y, et al. High speed and low power ultra-deep-submicron Ⅲ-Ⅴ hetero-junctionless tunnel field effect transistor. IEEE Trans Electron Devices, 2014, 61(2):479 doi: 10.1109/TED.2013.2295238
[10]	Colinge J P, Lee C W, Afzalian A, et al. Nanowire transistors without junctions. Nature Nanotechnol, 2010, 5(3):225 doi: 10.1038/nnano.2010.15
[11]	Lee C W, Afzalian A, Akhavan N D, et al. Junctionless multigate field-effect transistor. Appl Phys Lett, 2009, 94(5):053511 doi: 10.1063/1.3079411
[12]	Mandol P, Ghosh B, Bal P. Planner junctionless transistor with non-uniform channel doping. Appl Phys Lett, 2013, 102:133505 doi: 10.1063/1.4801443
[13]	http://www.silvaco.com. accessed on 27 July, 2013
[14]	Silvaco (Atlas) User manual, 19 December 2013
[15]	Hansch W, Vogelsang T, Kirchner R, et al. Carrier transport near the Si/SiO₂ interface of a MOSFET. Solid-State Electron, 1989, 32(10):839 doi: 10.1016/0038-1101(89)90060-9
[16]	Kranti A, Lee C W, Ferain I, et al. Junctionless nanowire transistor:properties and design guidelines. Proc 34th IEEE Eur Solid-State Device Res Conf, 2010:357 http://adsabs.harvard.edu/cgi-bin/nph-data_query?link_type=ABSTRACT&bibcode=2011SSEle..65...33C
[17]	Choi S J, Moon D I, Kim S, et al. Nonvolatile memory by all-around-gate junctionless transistor composed of silicon nanowire on bulk substrate. IEEE Electron Device Lett, 2011, 32(5):602 doi: 10.1109/LED.2011.2118734
[18]	Lee C W, Yan R, Ferain I, et al. Nanowire zero-capacitor DRAM transistors with and without junctions. Proc 10th IEEE-NANO, 2010:242 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5697888
[19]	Lattanzio L, De Micheielis L, Biswas A, et al. Abrupt switch based on internally combined band-to-band-and barrier tunneling mechanisms. IEEE Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2010 http://www.sciencedirect.com/science/article/pii/S0038110111002449
[20]	Boucart K, Ionescu A M. Double gate tunnel FET high k gate dielectric. IEEE Trans Electron Devices, 2007, 54(7):1725 doi: 10.1109/TED.2007.899389
[21]	Razavi P, Orouji A A. Dual material gate oxide stack symmetric double gate MOSFETs:improving short channel effects of nanoscale double gate MOSFET. IEEE 11th International Biennial Baltic Electronics Conference, 2008 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4657483
[22]	Kranti A, Lee C, Ferain I, et al. Junctionless 6T SRAM cell. IET Electron Lett, 2010, 46(22):1491 doi: 10.1049/el.2010.2736
[23]	Bjork M T, Knoch J, Schmid H, et al. Silicon nanowire tunneling field-effect transistors. Appl Phys Lett, 2008, 92(19):193504 doi: 10.1063/1.2928227
[24]	Hinkle C L, Sonnet A M, Vogel E M, et al. GaAs interfacial self-cleaning by atomic layer deposition. Appl Phys Lett, 2008, 92:071901 doi: 10.1063/1.2883956
[25]	Passlack M, Hong M, Mannaerts J P, et al. In-situ Ga₂O₃ process for GaAs inversion/accumulation device and surface passivation applications. IEEE Int Electron Devices Meeting, 1995:383 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=499220
[26]	Holtij T, Schwarz M, Graef M, et al. Model for investigation of I_on/I_off ratios in short-channel junction less double gate MOSFET. IEEE, 2013 http://ieeexplore.ieee.org/document/6523497/
[27]	D Kim, T Krishnamohan, Smith L, et al. Band to band tunneling study in high mobility material:Ⅲ-Ⅴ Si, Ge, and strained SiGe. IEEE 65th Annual Device Research Conference, 2007 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4373650
[28]	Taur Y. An analytical solution to a double-gate MOSFET with undoped body. IEEE Electron Device Lett, 2000, 21(5):245 doi: 10.1109/55.841310
[29]	Goswami Y, Tripathi B M, Pranav A, et al. Junctionless tunnel field effect transistor with enhanced performance using Ⅲ-Ⅴ semiconductor. Journal of Low Power Electronics, 2013, 9:496 doi: 10.1166/jolpe.2013.1281
[30]	Goswami Y, Ghosh B, Asthana P K. Analog performance of Si junctionless tunnel field effect transistor and its improvisation using Ⅲ-Ⅴ semiconductor. RSC Adv, 2014, 4:10761 doi: 10.1039/c3ra46535g

Fig. 1. Longitudinal cross section of proposed device structure of AlGaAs/Si HJL-TFET. The width of device equals to 1 $\mu $m. The work functions of gate (i.e. control gate) and gate1 (i.e. auxiliary gate) are 4.2 eV and 5.2 eV respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 2. $I_{\rm D}$-$V_{\rm G}$ characteristics of proposed heterostructure JL-TFET at 300 K.

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Fig. 3. (a) OFF-state electron and hole concentration of HJL-TFET. (b) OFF-state energy band diagram of HJL-TFET.

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Fig. 4. (a) ON-state electron, hole concentration. (b) ON-state energy band diagram of H-JL-TFET.

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Fig. 5. Band-to-band electron tunneling rate versus relative permittivity with different gate materials at 300 K.

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Fig. 6. Transfer characteristics of proposed simulated HJL-TFET with different gate dielectric materials at 300 K.

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Fig. 7. Variation of ON-current ($I_{\rm ON})$ with relative permittivity of gate material at 300 K.

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Fig. 8. $I_{\rm OFF}$ current versus relative permittivity of gate material at 300 K.

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Fig. 9. Variation of $I_{\rm ON}/I_{\rm OFF}$ ratios with various gate dielectric materials at 300 K.

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Fig. 10. Point subthreshold slope variation versus different gate dielectric materials at 300 K.

DownLoad: Full-Size Img PowerPoint

[1]	Kanungo S, Rahaman H, Gupta P S. A detail simulation study on extended source ultra-thin body double-gated tunnel FET. IEEE 5th International Conference on Computers and Devices for Communication (CODEC), 2012 http://ieeexplore.ieee.org/document/6509242/
[2]	Wang P Y, Tusi B Y. Si_1-xGe_x epitaxial tunnel layer structure for P-channel tunnel FET improvement. IEEE Trans Electron Devices, 2013, 60(12):4098 doi: 10.1109/TED.2013.2287633
[3]	Ganapathi K, Yoon Y, Salahuddin S. Analysis of InAs vertical and lateral band-to-band tunneling transistors:leveraging vertical tunneling for improved performance. Appl Phys Lett, 2010, 97(3):033504 doi: 10.1063/1.3466908
[4]	Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature, 2011, 479:329 doi: 10.1038/nature10679
[5]	Mishra R, Ghosh B, Banarjee S K. Device and circuit performance evaluation and improvement of SiGe tunnel FETs. IEEE International Conference on Enabling Science and Nanotechnology (ESciNano), 2011 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5701031
[6]	Mamilla B K, Naiyar S, Mishra R, et al. A Ⅲ-Ⅴ group tunnel FETs with good switching characteristics and their circuit performance. International Journal of Electronics Communication and Computer Technology, 2011, 1(2):26 http://www.oalib.com/paper/2077180
[7]	Ghosh B, Akram M W. Junctionless tunnel field effect transistor. IEEE Electron Device Lett, 2013, 34(5):584 doi: 10.1109/LED.2013.2253752
[8]	Bal P, Akram M W, Mondal P, et al. Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET). J Comput Electron, 2013, 12:782 doi: 10.1007/s10825-013-0483-6
[9]	Asthana P K, Ghosh B, Goswami Y, et al. High speed and low power ultra-deep-submicron Ⅲ-Ⅴ hetero-junctionless tunnel field effect transistor. IEEE Trans Electron Devices, 2014, 61(2):479 doi: 10.1109/TED.2013.2295238
[10]	Colinge J P, Lee C W, Afzalian A, et al. Nanowire transistors without junctions. Nature Nanotechnol, 2010, 5(3):225 doi: 10.1038/nnano.2010.15
[11]	Lee C W, Afzalian A, Akhavan N D, et al. Junctionless multigate field-effect transistor. Appl Phys Lett, 2009, 94(5):053511 doi: 10.1063/1.3079411
[12]	Mandol P, Ghosh B, Bal P. Planner junctionless transistor with non-uniform channel doping. Appl Phys Lett, 2013, 102:133505 doi: 10.1063/1.4801443
[13]	http://www.silvaco.com. accessed on 27 July, 2013
[14]	Silvaco (Atlas) User manual, 19 December 2013
[15]	Hansch W, Vogelsang T, Kirchner R, et al. Carrier transport near the Si/SiO₂ interface of a MOSFET. Solid-State Electron, 1989, 32(10):839 doi: 10.1016/0038-1101(89)90060-9
[16]	Kranti A, Lee C W, Ferain I, et al. Junctionless nanowire transistor:properties and design guidelines. Proc 34th IEEE Eur Solid-State Device Res Conf, 2010:357 http://adsabs.harvard.edu/cgi-bin/nph-data_query?link_type=ABSTRACT&bibcode=2011SSEle..65...33C
[17]	Choi S J, Moon D I, Kim S, et al. Nonvolatile memory by all-around-gate junctionless transistor composed of silicon nanowire on bulk substrate. IEEE Electron Device Lett, 2011, 32(5):602 doi: 10.1109/LED.2011.2118734
[18]	Lee C W, Yan R, Ferain I, et al. Nanowire zero-capacitor DRAM transistors with and without junctions. Proc 10th IEEE-NANO, 2010:242 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5697888
[19]	Lattanzio L, De Micheielis L, Biswas A, et al. Abrupt switch based on internally combined band-to-band-and barrier tunneling mechanisms. IEEE Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2010 http://www.sciencedirect.com/science/article/pii/S0038110111002449
[20]	Boucart K, Ionescu A M. Double gate tunnel FET high k gate dielectric. IEEE Trans Electron Devices, 2007, 54(7):1725 doi: 10.1109/TED.2007.899389
[21]	Razavi P, Orouji A A. Dual material gate oxide stack symmetric double gate MOSFETs:improving short channel effects of nanoscale double gate MOSFET. IEEE 11th International Biennial Baltic Electronics Conference, 2008 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4657483
[22]	Kranti A, Lee C, Ferain I, et al. Junctionless 6T SRAM cell. IET Electron Lett, 2010, 46(22):1491 doi: 10.1049/el.2010.2736
[23]	Bjork M T, Knoch J, Schmid H, et al. Silicon nanowire tunneling field-effect transistors. Appl Phys Lett, 2008, 92(19):193504 doi: 10.1063/1.2928227
[24]	Hinkle C L, Sonnet A M, Vogel E M, et al. GaAs interfacial self-cleaning by atomic layer deposition. Appl Phys Lett, 2008, 92:071901 doi: 10.1063/1.2883956
[25]	Passlack M, Hong M, Mannaerts J P, et al. In-situ Ga₂O₃ process for GaAs inversion/accumulation device and surface passivation applications. IEEE Int Electron Devices Meeting, 1995:383 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=499220
[26]	Holtij T, Schwarz M, Graef M, et al. Model for investigation of I_on/I_off ratios in short-channel junction less double gate MOSFET. IEEE, 2013 http://ieeexplore.ieee.org/document/6523497/
[27]	D Kim, T Krishnamohan, Smith L, et al. Band to band tunneling study in high mobility material:Ⅲ-Ⅴ Si, Ge, and strained SiGe. IEEE 65th Annual Device Research Conference, 2007 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4373650
[28]	Taur Y. An analytical solution to a double-gate MOSFET with undoped body. IEEE Electron Device Lett, 2000, 21(5):245 doi: 10.1109/55.841310
[29]	Goswami Y, Tripathi B M, Pranav A, et al. Junctionless tunnel field effect transistor with enhanced performance using Ⅲ-Ⅴ semiconductor. Journal of Low Power Electronics, 2013, 9:496 doi: 10.1166/jolpe.2013.1281
[30]	Goswami Y, Ghosh B, Asthana P K. Analog performance of Si junctionless tunnel field effect transistor and its improvisation using Ⅲ-Ⅴ semiconductor. RSC Adv, 2014, 4:10761 doi: 10.1039/c3ra46535g

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Received: 31 January 2014 Revised: 29 May 2014 Online: Published: 01 November 2014

Article Navigation > Journal of Semiconductors > 2014 > 35(11): 114005

Shiromani Balmukund Rahi, Bahniman Ghosh, Pranav Asthana. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET[J]. Journal of Semiconductors, 2014, 35(11): 114005. doi: 10.1088/1674-4926/35/11/114005 ****S B Rahi, B Ghosh, P Asthana. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET[J]. J. Semicond., 2014, 35(11): 114005. doi: 10.1088/1674-4926/35/11/114005.

Citation:

Shiromani Balmukund Rahi, Bahniman Ghosh, Pranav Asthana. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET[J]. Journal of Semiconductors, 2014, 35(11): 114005. doi: 10.1088/1674-4926/35/11/114005 ****

S B Rahi, B Ghosh, P Asthana. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET[J]. J. Semicond., 2014, 35(11): 114005. doi: 10.1088/1674-4926/35/11/114005.

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A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

DOI: 10.1088/1674-4926/35/11/114005

1.
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India
2.
Microelectronics Research Center, 10100, Burnet Road, Bldg. 160, University of Texas at Austin, Austin, TX, 78758, USA

More Information

Corresponding author: Bahniman Ghosh, Email:bghosh@utexas.edu
Received Date: 2014-01-31
Revised Date: 2014-05-29
Published Date: 2014-11-01

Abstract

Abstract

We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate=4.2 eV, gate1=5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4×10^-6 A/μm, the off current remains as low as 9.1×10^-14 A/μm. So I_ON/I_OFF ratio of ≃ 10⁸ is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO₂ gate material.
- band-to-band tunneling (BTBT),
- TFET,
- heterostructure junctionless tunnel field effect transistor (HJL-TFET),
- I_ON/I_OFF ratio subthreshold slope,
- VLSI

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References(30)

References

[1]	Kanungo S, Rahaman H, Gupta P S. A detail simulation study on extended source ultra-thin body double-gated tunnel FET. IEEE 5th International Conference on Computers and Devices for Communication (CODEC), 2012 http://ieeexplore.ieee.org/document/6509242/
[2]	Wang P Y, Tusi B Y. Si_1-xGe_x epitaxial tunnel layer structure for P-channel tunnel FET improvement. IEEE Trans Electron Devices, 2013, 60(12):4098 doi: 10.1109/TED.2013.2287633
[3]	Ganapathi K, Yoon Y, Salahuddin S. Analysis of InAs vertical and lateral band-to-band tunneling transistors:leveraging vertical tunneling for improved performance. Appl Phys Lett, 2010, 97(3):033504 doi: 10.1063/1.3466908
[4]	Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature, 2011, 479:329 doi: 10.1038/nature10679
[5]	Mishra R, Ghosh B, Banarjee S K. Device and circuit performance evaluation and improvement of SiGe tunnel FETs. IEEE International Conference on Enabling Science and Nanotechnology (ESciNano), 2011 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5701031
[6]	Mamilla B K, Naiyar S, Mishra R, et al. A Ⅲ-Ⅴ group tunnel FETs with good switching characteristics and their circuit performance. International Journal of Electronics Communication and Computer Technology, 2011, 1(2):26 http://www.oalib.com/paper/2077180
[7]	Ghosh B, Akram M W. Junctionless tunnel field effect transistor. IEEE Electron Device Lett, 2013, 34(5):584 doi: 10.1109/LED.2013.2253752
[8]	Bal P, Akram M W, Mondal P, et al. Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET). J Comput Electron, 2013, 12:782 doi: 10.1007/s10825-013-0483-6
[9]	Asthana P K, Ghosh B, Goswami Y, et al. High speed and low power ultra-deep-submicron Ⅲ-Ⅴ hetero-junctionless tunnel field effect transistor. IEEE Trans Electron Devices, 2014, 61(2):479 doi: 10.1109/TED.2013.2295238
[10]	Colinge J P, Lee C W, Afzalian A, et al. Nanowire transistors without junctions. Nature Nanotechnol, 2010, 5(3):225 doi: 10.1038/nnano.2010.15
[11]	Lee C W, Afzalian A, Akhavan N D, et al. Junctionless multigate field-effect transistor. Appl Phys Lett, 2009, 94(5):053511 doi: 10.1063/1.3079411
[12]	Mandol P, Ghosh B, Bal P. Planner junctionless transistor with non-uniform channel doping. Appl Phys Lett, 2013, 102:133505 doi: 10.1063/1.4801443
[13]	http://www.silvaco.com. accessed on 27 July, 2013
[14]	Silvaco (Atlas) User manual, 19 December 2013
[15]	Hansch W, Vogelsang T, Kirchner R, et al. Carrier transport near the Si/SiO₂ interface of a MOSFET. Solid-State Electron, 1989, 32(10):839 doi: 10.1016/0038-1101(89)90060-9
[16]	Kranti A, Lee C W, Ferain I, et al. Junctionless nanowire transistor:properties and design guidelines. Proc 34th IEEE Eur Solid-State Device Res Conf, 2010:357 http://adsabs.harvard.edu/cgi-bin/nph-data_query?link_type=ABSTRACT&bibcode=2011SSEle..65...33C
[17]	Choi S J, Moon D I, Kim S, et al. Nonvolatile memory by all-around-gate junctionless transistor composed of silicon nanowire on bulk substrate. IEEE Electron Device Lett, 2011, 32(5):602 doi: 10.1109/LED.2011.2118734
[18]	Lee C W, Yan R, Ferain I, et al. Nanowire zero-capacitor DRAM transistors with and without junctions. Proc 10th IEEE-NANO, 2010:242 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5697888
[19]	Lattanzio L, De Micheielis L, Biswas A, et al. Abrupt switch based on internally combined band-to-band-and barrier tunneling mechanisms. IEEE Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2010 http://www.sciencedirect.com/science/article/pii/S0038110111002449
[20]	Boucart K, Ionescu A M. Double gate tunnel FET high k gate dielectric. IEEE Trans Electron Devices, 2007, 54(7):1725 doi: 10.1109/TED.2007.899389
[21]	Razavi P, Orouji A A. Dual material gate oxide stack symmetric double gate MOSFETs:improving short channel effects of nanoscale double gate MOSFET. IEEE 11th International Biennial Baltic Electronics Conference, 2008 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4657483
[22]	Kranti A, Lee C, Ferain I, et al. Junctionless 6T SRAM cell. IET Electron Lett, 2010, 46(22):1491 doi: 10.1049/el.2010.2736
[23]	Bjork M T, Knoch J, Schmid H, et al. Silicon nanowire tunneling field-effect transistors. Appl Phys Lett, 2008, 92(19):193504 doi: 10.1063/1.2928227
[24]	Hinkle C L, Sonnet A M, Vogel E M, et al. GaAs interfacial self-cleaning by atomic layer deposition. Appl Phys Lett, 2008, 92:071901 doi: 10.1063/1.2883956
[25]	Passlack M, Hong M, Mannaerts J P, et al. In-situ Ga₂O₃ process for GaAs inversion/accumulation device and surface passivation applications. IEEE Int Electron Devices Meeting, 1995:383 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=499220
[26]	Holtij T, Schwarz M, Graef M, et al. Model for investigation of I_on/I_off ratios in short-channel junction less double gate MOSFET. IEEE, 2013 http://ieeexplore.ieee.org/document/6523497/
[27]	D Kim, T Krishnamohan, Smith L, et al. Band to band tunneling study in high mobility material:Ⅲ-Ⅴ Si, Ge, and strained SiGe. IEEE 65th Annual Device Research Conference, 2007 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4373650
[28]	Taur Y. An analytical solution to a double-gate MOSFET with undoped body. IEEE Electron Device Lett, 2000, 21(5):245 doi: 10.1109/55.841310
[29]	Goswami Y, Tripathi B M, Pranav A, et al. Junctionless tunnel field effect transistor with enhanced performance using Ⅲ-Ⅴ semiconductor. Journal of Low Power Electronics, 2013, 9:496 doi: 10.1166/jolpe.2013.1281
[30]	Goswami Y, Ghosh B, Asthana P K. Analog performance of Si junctionless tunnel field effect transistor and its improvisation using Ⅲ-Ⅴ semiconductor. RSC Adv, 2014, 4:10761 doi: 10.1039/c3ra46535g

A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

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