J. Semicond. > 2014, Volume 35 > Issue 4 > 045003
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SEMICONDUCTOR INTEGRATED CIRCUITS

An integrated power divider implemented in GaAs technology

Zebao Du, Hao Yang, Haiying Zhang and Min Zhu

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 Corresponding author: Du Zebao, Email:duzebao@ime.ac.cn

DOI: 10.1088/1674-4926/35/4/045003

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Abstract: A compact lumped integrated power divider with low insertion loss using 0.5 μm GaAs pHEMT technology is presented. The proposed power divider uses the π-type LC network for transmission line equivalence and a thin film resistor for isolation tuning simultaneously. The quality factor of the inductor is analyzed and synthesized for insertion-loss influence. The measured insertion loss is less than 0.5 dB when the operating frequency is within the range of 5.15-6.15 GHz. The return loss and isolation are better than 15 dB and 20 dB, respectively. The compact dimension of the power divider is as small as 0.9×0.85 mm2. The measured results agree well with the simulated ones.

Key words: power divider, GaAs, IPD



[1]
Grebennikov A. RF and microwave transmitter design. New York: Wiley, 2011 http://ci.nii.ac.jp/ncid/BB06505372
[2]
Pozar D M. Microwave engineering. 3rd ed. New York: Wiley, 2005 https://www.researchgate.net/publication/308449120_Microwave_Engineering
[3]
Kawai T, Ohta I, Enokihara A. Design method of lumped-element dual-band Wilkinson power dividers based on frequency transformation. Asia-Pacific Microwave Conference Proceedings, 2010:710 http://ieeexplore.ieee.org/document/5728440/
[4]
Lu L H, Liao Y T, Wu C R. A miniaturized Wilkinson power divider with CMOS active inductors. IEEE Microw Wireless Compon Lett, 2005, 15(11):775 doi: 10.1109/LMWC.2005.859020
[5]
Kim H T, Liu K, Frye R C, et al. Design of compact power divider using integrated passive device (IPD) technology. Electronic Components and Technology Conference, 2009:1894 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5074278
[6]
Elsbury M M, Dresselhaus P D, Bergren N F, et al. Broadband lumped-element integrated n-way power dividers for voltage standards. IEEE Trans Microw Theory Tech, 2009, 57(8):2055 doi: 10.1109/TMTT.2009.2025464
[7]
Wang C, Qian C, Kyung G I, et al. High performance integrated passive technology by SI-GaAs-based fabrication for RF and microwave application. Asia-Pacific Microwave Conference Proceedings, 2008:1 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4958020
[8]
Wang C, Lee W S, Zhang F, et al. A novel method for the fabrication of integrated passive devices on SI-GaAs substrate. International Journal of Advanced Manufacturing Technology, 2011, 52:1011 doi: 10.1007/s00170-010-2807-z
[9]
Lin Y S, Lee J H. Miniature ultra-wideband power divider using bridged T-coils. IEEE Microw Compon Lett, 2012, 22(8):391 doi: 10.1109/LMWC.2012.2205231
[10]
Wu Rui, Liao Xiaoping, Zhang Zhiqiang. MMIC-based RF on-chip LC passive filters. Journal of Semiconductors, 2008, 29(12):2437 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=08041402&flag=1
Fig. 1.  Wilkinson power divider.

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Fig. 2.  Transmission line and its $LC$ network counterpart.

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Fig. 3.  Lumped Wilkinson power divider.

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Fig. 4.  Dual-$\pi $-type LC network.

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Fig. 5.  Insertion loss with different quality factors.

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Fig. 6.  Testing PCB of power divider.

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Fig. 7.  Chip photo of power divider.

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Fig. 8.  Measured (dashed line) and simulated (solid line) results. (a) $S_{11}$. (b) Insertion loss. (c) Isolation.

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Table 1.   Characteristics of different technologies.

Table 2.   Comparison with previously reported high-performance power divider.
[1]
Grebennikov A. RF and microwave transmitter design. New York: Wiley, 2011 http://ci.nii.ac.jp/ncid/BB06505372
[2]
Pozar D M. Microwave engineering. 3rd ed. New York: Wiley, 2005 https://www.researchgate.net/publication/308449120_Microwave_Engineering
[3]
Kawai T, Ohta I, Enokihara A. Design method of lumped-element dual-band Wilkinson power dividers based on frequency transformation. Asia-Pacific Microwave Conference Proceedings, 2010:710 http://ieeexplore.ieee.org/document/5728440/
[4]
Lu L H, Liao Y T, Wu C R. A miniaturized Wilkinson power divider with CMOS active inductors. IEEE Microw Wireless Compon Lett, 2005, 15(11):775 doi: 10.1109/LMWC.2005.859020
[5]
Kim H T, Liu K, Frye R C, et al. Design of compact power divider using integrated passive device (IPD) technology. Electronic Components and Technology Conference, 2009:1894 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5074278
[6]
Elsbury M M, Dresselhaus P D, Bergren N F, et al. Broadband lumped-element integrated n-way power dividers for voltage standards. IEEE Trans Microw Theory Tech, 2009, 57(8):2055 doi: 10.1109/TMTT.2009.2025464
[7]
Wang C, Qian C, Kyung G I, et al. High performance integrated passive technology by SI-GaAs-based fabrication for RF and microwave application. Asia-Pacific Microwave Conference Proceedings, 2008:1 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4958020
[8]
Wang C, Lee W S, Zhang F, et al. A novel method for the fabrication of integrated passive devices on SI-GaAs substrate. International Journal of Advanced Manufacturing Technology, 2011, 52:1011 doi: 10.1007/s00170-010-2807-z
[9]
Lin Y S, Lee J H. Miniature ultra-wideband power divider using bridged T-coils. IEEE Microw Compon Lett, 2012, 22(8):391 doi: 10.1109/LMWC.2012.2205231
[10]
Wu Rui, Liao Xiaoping, Zhang Zhiqiang. MMIC-based RF on-chip LC passive filters. Journal of Semiconductors, 2008, 29(12):2437 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?file_no=08041402&flag=1

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    Received: 17 June 2013 Revised: 24 November 2013 Online: Published: 01 April 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(4): 045003
      Zebao Du, Hao Yang, Haiying Zhang, Min Zhu. An integrated power divider implemented in GaAs technology[J]. Journal of Semiconductors, 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003 ****Z B Du, H Yang, H Y Zhang, M Zhu. An integrated power divider implemented in GaAs technology[J]. J. Semicond., 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003.
      Citation:
      Zebao Du, Hao Yang, Haiying Zhang, Min Zhu. An integrated power divider implemented in GaAs technology[J]. Journal of Semiconductors, 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003 ****
      Z B Du, H Yang, H Y Zhang, M Zhu. An integrated power divider implemented in GaAs technology[J]. J. Semicond., 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003.
      shu

      An integrated power divider implemented in GaAs technology

      DOI: 10.1088/1674-4926/35/4/045003

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      Project supported by the National Science and Technology Major Projects of China (Nos. 2011ZX03004-001-02, 2010ZX03007-002-03)

      the National Science and Technology Major Projects of China 2010ZX03007-002-03

      the National Science and Technology Major Projects of China 2011ZX03004-001-02

      More Information
      • Corresponding author: Du Zebao, Email:duzebao@ime.ac.cn
      • Received Date: 2013-06-17
      • Revised Date: 2013-11-24
      • Published Date: 2014-04-01

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