J. Semicond. > 2015, Volume 36 > Issue 1 > 014009
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SEMICONDUCTOR DEVICES

An improved trench gate super-junction IGBT with double emitter

Weinan Dai, Jing Zhu, Weifeng Sun, Yicheng Du and Keqin Huang

+ Author Affiliations

 Corresponding author: Jing Zhu, E-mail: zhj_seu@126.com

DOI: 10.1088/1674-4926/36/1/014009

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Abstract: An improved trench gate super-junction insulated-gate bipolar transistor is presented. The improved structure contains two emitter regions. The first emitter region of the device works as the conventional structure, which can absorb both the electron current and hole current. The second emitter on the top of the p-pillar acts as the hole current diverter, leading to an improved latch-up capability without sacrificing the off-state breakdown voltage (BV) and turn-off loss. The simulation shows that the latch-up limit of the SJ-IGBT increases from 15000 to 28300 A/cm2 at VGE = 10 V, the BV is 810 V, and the turn off loss is 6.5 mJ/cm2 at Von = 1.2 V.

Key words: trench gate, super-junction (SJ), insulated-gate bipolar transistor (IGBT), latch-up



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Fig. 1.  Schematic cross-sectional views of (a) the DESJ-IGBT and (b) the conventional SJ-IGBT.

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Fig. 2.  The relationship between breakdown voltage and pillar doping concentration at different pillar widths.

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Fig. 3.  Breakdown voltage versus charge imbalance of n- and p-pillars in DESJ-IGBT. The pillar width is 6 $\mu $m.

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Fig. 4.  Electrical potential distribution at $V_{\rm CE}$ $=$ 810 V and off-state breakdown characteristics of the conventional SJ-IGBT and improved DESJ-IGBT.

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Fig. 5.  (a) Output characteristics of the DESJ-IGBT at different pillar concentration in comparison with the conventional IGBT. (b) An enlarged view of the linear region. All of the structures have the same breakdown voltage.

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Fig. 6.  Hole and electron current density distribution along vertical-cut ($y=$ 30 $\mu$m) in the n/p-pillars at different doping concentrations (a) 1 $\times$ 10$^{14}$ cm$^{-3}$, (b) 1 $\times$ 10$^{15}$ cm$^{-3}$, and (c) 5 $\times$ 10$^{15}$ cm$^{-3}$.

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Fig. 7.  (a) Hole current density contours for conventional SJ-IGBT at $V_{\rm GE}$ $=$ 10 V and $J_{\rm C}$ $=$ 5000 A/cm$^{2}$ in comparison with the improved structure and (b) the 3-D hole current density distribution across the two devices.

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Fig. 8.  The circuit used to simulate latch up characteristics.

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Fig. 9.  Latch-up characteristics of the conventional and improved SJ-IGBT at $V_{\rm GE}$ $=$ 10 V.

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Fig. 10.  Latch-up characteristics of the DESJ-IGBT in relation to pillar doping.

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Fig. 11.  Turn-off current and voltage waveforms of the DESJ-IGBT, the conventional SJ-IGBT, and the FS-IGBT (collector current density $J_{\rm C}$ $=$ 500 A/cm$^{2}$, $T=$ 300 K).

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Fig. 12.  Trade-off performance of DESJ-IGBT at different pillar concentrations in comparison with FS-IGBT and SJ-IGBT.

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    Received: 20 May 2014 Revised: Online: Published: 01 January 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(1): 014009
      Weinan Dai, Jing Zhu, Weifeng Sun, Yicheng Du, Keqin Huang. An improved trench gate super-junction IGBT with double emitter[J]. Journal of Semiconductors, 2015, 36(1): 014009. doi: 10.1088/1674-4926/36/1/014009 ****W N Dai, J Zhu, W F Sun, Y C Du, K Q Huang. An improved trench gate super-junction IGBT with double emitter[J]. J. Semicond., 2015, 36(1): 014009. doi: 10.1088/1674-4926/36/1/014009.
      Citation:
      Weinan Dai, Jing Zhu, Weifeng Sun, Yicheng Du, Keqin Huang. An improved trench gate super-junction IGBT with double emitter[J]. Journal of Semiconductors, 2015, 36(1): 014009. doi: 10.1088/1674-4926/36/1/014009 ****
      W N Dai, J Zhu, W F Sun, Y C Du, K Q Huang. An improved trench gate super-junction IGBT with double emitter[J]. J. Semicond., 2015, 36(1): 014009. doi: 10.1088/1674-4926/36/1/014009.
      shu

      An improved trench gate super-junction IGBT with double emitter

      DOI: 10.1088/1674-4926/36/1/014009

      • National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61204083), the Natural Science Foundation of the Jiangsu Province of China (Nos. BK2012204, BY2011146), and the Scientific Research Guidance Foundation of Southeast University Wuxi Branch Campus.

      More Information
      • Corresponding author: E-mail: zhj_seu@126.com
      • Received Date: 2014-05-20
      • Accepted Date: 2014-09-09
      • Published Date: 2015-01-25

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