J. Semicond. > 2017, Volume 38 > Issue 11 > 113001
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SEMICONDUCTOR MATERIALS

Optimization of SnS active layer thickness for solar cell application

Yashika Gupta1, 2 and P. Arun1,

+ Author Affiliations

 Corresponding author: P. Arun, Email: arunp92@sgtbkhalsa.du.ac.in

DOI: 10.1088/1674-4926/38/11/113001

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Abstract: This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by thermal evaporation. Both type of films had the same (113) orientation of the crystal planes with a constant tensile strain of ~ 0.003 and ~ 0.011, respectively. The persistent photocurrent was observed in all n-SnS and p-SnS samples with the current’s time decay constant decreasing with increasing film thickness. Hole mobility of thicker p-SnS films was found to be greater than the electron mobility in n-SnS samples, with mobility (both hole and electron) showing an increasing trend with film thickness. The optimum absorber layer thickness for both p- and n-SnS layers should have a high value of diffusion length for a given absorption coefficient and band-gap.

Key words: thin film, chalcogenides, optical properties



[1]
Dong Q, Fang Y, Shao Y, et al. Electron-hole diffusion lengths > 175 μm in solution-grown CH3NH3PbI3 single crystals. Science, 2015, 347: 6225
[2]
Gao C, Shen H, Sun L. Preparation and properties of zinc blende and orthorhombic SnS films by chemical bath deposition. Appl Surf Sci, 2011, 257: 6750 doi: 10.1016/j.apsusc.2011.02.116
[3]
Sohila S, Rajalakshmi M, Ghosh C, et al. Optical and Raman Scattering studies on SnS nano-particles. J Alloys Compd, 2011, 509: 5843 doi: 10.1016/j.jallcom.2011.02.141
[4]
Fadavieslam M R, Shahtahmasebi N, Razaee-Roknabadi M, et al. A study of the photoconductivity and thermoelectric properties of SnxSy optical semiconductor thin films deposited by the spray pyrolysis technique. Phys Scr, 2011, 84: 035705 doi: 10.1088/0031-8949/84/03/035705
[5]
Gomez A, Martinez H, Calixto-Rodriguez M, et al. A study of the structural, optical and electrical properties of SnS thin films modified by plasma. J Mater Sci Eng B, 2013, 3: 352
[6]
Ogah O E, Reddy K R, Zoppi G, et al. Annealing studies and electrical properties of SnS-based solar cells. Thin Solid Films, 2011, 519: 7425 doi: 10.1016/j.tsf.2010.12.235
[7]
Leach M, Reddy K T R, Reddy M V, et al. Tin sulphide thin films synthesised using a two step process. Energy Procedia, 2012, 15: 371 doi: 10.1016/j.egypro.2012.02.045
[8]
Ristov M, Sinadinovski G, Grozdanov J, et al. Chemical deposition of tin(II) sulphide thin films. Thin Solid Films, 1989, 173: 53 doi: 10.1016/0040-6090(89)90536-1
[9]
Sajeesh T H, Jinesh K B, Rao M, et al. Unveiling the defect levels in SnS thin films for photovoltaic applications using photoluminescence technique. Phys Status Solidi A, 2010, 207: 1934 doi: 10.1002/pssa.200925593
[10]
Sinsermsuksakul P, Heo J, Noh W, et al. Atomic layer deposition of tin monosulfide thin films. Adv Energy Mater, 2011, 7: 1116
[11]
Sinsermsuksakul P, Hartman K, Kim S B, et al. Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer. Appl Phys Lett, 2013, 102: 053901 doi: 10.1063/1.4789855
[12]
Stavrinadis A, Smith J M, Cattley C A, et al. SnS/PbS nanocrystal hetrojunction photovoltaics. Nanotechnology, 2010, 21: 185202 doi: 10.1088/0957-4484/21/18/185202
[13]
Jain P, Arun P. Photovoltaic performance of hybrid ITO/PEDOT:PSS/n-SnS/Al solar cell structure. J Semicond, 2016, 37: 074002 doi: 10.1088/1674-4926/37/7/074002
[14]
Jain P, Shokeen P, Arun P. Improved efficiency of plasmonic tin sulfide solar cells. J Mater Sci: Mater Elec, 2016, 27: 5107 doi: 10.1007/s10854-016-4401-0
[15]
Gupta Y, Arun P. Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent. Phys Status Solidi B, 2016, 253: 509 doi: 10.1002/pssb.v253.3
[16]
Vidal J, Lany S, d’Avezac M, et al. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Appl Phys Lett, 2012, 100: 032104 doi: 10.1063/1.3675880
[17]
Ninan G G, Kartha C S, Vijayakumar K P et al. Spray pyrolysed SnS thin films in n and p type: optimization of deposition process and characterization of samples. J Analyt Appl Pyrolysis, 2016, 120: 121 doi: 10.1016/j.jaap.2016.04.016
[18]
Ran F Y, Xiao Z, Toda Y, et al. n-type conversion of SnS by isovalent ion substitution: geometrical doping as a new doping route. Sci Rep, 2015, 5: 10428 doi: 10.1038/srep10428
[19]
Chandrashekhar H R, Humphreys R G, Zwick U, et al. Infrared and Raman spectra of the IV–VI compounds SnS and SnSe. Phys Rev B, 1977, 15: 2177 doi: 10.1103/PhysRevB.15.2177
[20]
Alim K A, Fonoberrov V A, Baladdin A A. Origin of the optical phonon frequency shifts in ZnO quantum dots. Appl Phys Lett, 20015, 86: 053103
[21]
Zhu J S, Lu X M, Jiang W, et al. Optical study on the size effects in BaTiO3 thin films. J Appl Phys, 1997, 81: 1392 doi: 10.1063/1.363875
[22]
Rajalakshmi M, Arora A K, Bendre B S, et al. Optical phonon confinement in zinc oxide nanoparticles. J Appl Phys, 2000, 87: 2445 doi: 10.1063/1.372199
[23]
Lucovsky G, Mikkelsen J C, Liang W Y, et al. Optical phonon anisotropies in the layer crystals SnS2 and SnSe2. Phys Rev B, 1976, 14: 1663 doi: 10.1103/PhysRevB.14.1663
[24]
Dang X Z, Wang C D, Yu E T, et al. Persistent photoconductivity and defect levels in n-type AlGaN/GaN hetrostructures. Appl Phys Lett, 1998, 72: 2745 doi: 10.1063/1.121077
[25]
Gupta Y, Arun P. Influence of Urbach tail on the refractive index of p-SnS thin films. Phys Status Solidi C, 2017, 14: 1600207
[26]
Tauc J. Absorption edge and internal electric fields in amorphous semiconductors. Mater Res Bull, 1970, 5: 721 doi: 10.1016/0025-5408(70)90112-1
[27]
Brus L E. Electron–electron and electron–hole interactions in small semiconductor crystallites: the size dependence of the lowest excited electronic state. J Chem Phys, 1984, 80: 4403 doi: 10.1063/1.447218
[28]
Sze S M. Physics of semiconductor devices. 2nd ed. John Wiley and Sons, Inc. 1981
[29]
Ran F Y, Xiao Z, Toda Y, et al. n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route. Sci Rep, 2015, 5: 10428 doi: 10.1038/srep10428
[30]
Gupta Y, Arun P. Influence of strain on the sensitivity of tin sulphide films. Mater Chem Phys, 2017, 191: 86 doi: 10.1016/j.matchemphys.2017.01.029
Fig. 1.  (Color online) X-ray diffractograms of n-type and p-type films along with powder pattern showing similar crystal structure.

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Fig. 2.  (Color online) The grain size of p-type and n-type films varying linearly with film thickness.

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Fig. 3.  The SEM micrographs of n-SnS films with thicknesses (a) 480, (b) 600, and (c) 900 nm. This is compared to p-SnS films with thicknesses (d) 650, (e) 870, and (f) 960 nm.

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Fig. 4.  (Color online) Raman spectra of n-and p-SnS films of thicknesses indicated.

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Fig. 5.  (Color online) Variation of photocurrent with time for n-type SnS films of various thicknesses.

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Fig. 6.  (Color online) The decay time constant fall with increasing film thickness for both n-SnS and p-SnS. The error in τ values is represented by the diameter of the circles enclosing the data points.

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Fig. 7.  (Color online) The absorption spectra for (a) n-SnS and (b) p-SnS thin films of various samples have been compared. Spectrum have been slightly displaced with increasing film thickness for better viewing. (c) shows the variation of absorption coefficient (α) for p-SnS and n-SnS samples for various thicknesses, measured at 580 nm (yellow) wavelength. The error in α values is represented by the diameter of the circles enclosing the data points.

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Fig. 8.  (Color online) The Tauc plots or (αhν)2 versus hν plots were used to determine the bandgap of SnS films of various thicknesses.

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Fig. 9.  (Color online) Variation of the band-gap with increasing film thickness for both n-SnS and p-SnS.

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Fig. 10.  (Color online) Variation of the μ, the majority charge carrier mobility with increasing film thickness for both n-SnS and p-SnS. The error in mobility values is represented by the diameter of the circles enclosing the data points.

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Fig. 11.  (Color online) Variation of the diffusion length (LD) with increasing film thickness for both n-SnS and p-SnS. Curves were generated using the trendlines of Figs. 6 and 10.

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[1]
Dong Q, Fang Y, Shao Y, et al. Electron-hole diffusion lengths > 175 μm in solution-grown CH3NH3PbI3 single crystals. Science, 2015, 347: 6225
[2]
Gao C, Shen H, Sun L. Preparation and properties of zinc blende and orthorhombic SnS films by chemical bath deposition. Appl Surf Sci, 2011, 257: 6750 doi: 10.1016/j.apsusc.2011.02.116
[3]
Sohila S, Rajalakshmi M, Ghosh C, et al. Optical and Raman Scattering studies on SnS nano-particles. J Alloys Compd, 2011, 509: 5843 doi: 10.1016/j.jallcom.2011.02.141
[4]
Fadavieslam M R, Shahtahmasebi N, Razaee-Roknabadi M, et al. A study of the photoconductivity and thermoelectric properties of SnxSy optical semiconductor thin films deposited by the spray pyrolysis technique. Phys Scr, 2011, 84: 035705 doi: 10.1088/0031-8949/84/03/035705
[5]
Gomez A, Martinez H, Calixto-Rodriguez M, et al. A study of the structural, optical and electrical properties of SnS thin films modified by plasma. J Mater Sci Eng B, 2013, 3: 352
[6]
Ogah O E, Reddy K R, Zoppi G, et al. Annealing studies and electrical properties of SnS-based solar cells. Thin Solid Films, 2011, 519: 7425 doi: 10.1016/j.tsf.2010.12.235
[7]
Leach M, Reddy K T R, Reddy M V, et al. Tin sulphide thin films synthesised using a two step process. Energy Procedia, 2012, 15: 371 doi: 10.1016/j.egypro.2012.02.045
[8]
Ristov M, Sinadinovski G, Grozdanov J, et al. Chemical deposition of tin(II) sulphide thin films. Thin Solid Films, 1989, 173: 53 doi: 10.1016/0040-6090(89)90536-1
[9]
Sajeesh T H, Jinesh K B, Rao M, et al. Unveiling the defect levels in SnS thin films for photovoltaic applications using photoluminescence technique. Phys Status Solidi A, 2010, 207: 1934 doi: 10.1002/pssa.200925593
[10]
Sinsermsuksakul P, Heo J, Noh W, et al. Atomic layer deposition of tin monosulfide thin films. Adv Energy Mater, 2011, 7: 1116
[11]
Sinsermsuksakul P, Hartman K, Kim S B, et al. Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer. Appl Phys Lett, 2013, 102: 053901 doi: 10.1063/1.4789855
[12]
Stavrinadis A, Smith J M, Cattley C A, et al. SnS/PbS nanocrystal hetrojunction photovoltaics. Nanotechnology, 2010, 21: 185202 doi: 10.1088/0957-4484/21/18/185202
[13]
Jain P, Arun P. Photovoltaic performance of hybrid ITO/PEDOT:PSS/n-SnS/Al solar cell structure. J Semicond, 2016, 37: 074002 doi: 10.1088/1674-4926/37/7/074002
[14]
Jain P, Shokeen P, Arun P. Improved efficiency of plasmonic tin sulfide solar cells. J Mater Sci: Mater Elec, 2016, 27: 5107 doi: 10.1007/s10854-016-4401-0
[15]
Gupta Y, Arun P. Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent. Phys Status Solidi B, 2016, 253: 509 doi: 10.1002/pssb.v253.3
[16]
Vidal J, Lany S, d’Avezac M, et al. Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Appl Phys Lett, 2012, 100: 032104 doi: 10.1063/1.3675880
[17]
Ninan G G, Kartha C S, Vijayakumar K P et al. Spray pyrolysed SnS thin films in n and p type: optimization of deposition process and characterization of samples. J Analyt Appl Pyrolysis, 2016, 120: 121 doi: 10.1016/j.jaap.2016.04.016
[18]
Ran F Y, Xiao Z, Toda Y, et al. n-type conversion of SnS by isovalent ion substitution: geometrical doping as a new doping route. Sci Rep, 2015, 5: 10428 doi: 10.1038/srep10428
[19]
Chandrashekhar H R, Humphreys R G, Zwick U, et al. Infrared and Raman spectra of the IV–VI compounds SnS and SnSe. Phys Rev B, 1977, 15: 2177 doi: 10.1103/PhysRevB.15.2177
[20]
Alim K A, Fonoberrov V A, Baladdin A A. Origin of the optical phonon frequency shifts in ZnO quantum dots. Appl Phys Lett, 20015, 86: 053103
[21]
Zhu J S, Lu X M, Jiang W, et al. Optical study on the size effects in BaTiO3 thin films. J Appl Phys, 1997, 81: 1392 doi: 10.1063/1.363875
[22]
Rajalakshmi M, Arora A K, Bendre B S, et al. Optical phonon confinement in zinc oxide nanoparticles. J Appl Phys, 2000, 87: 2445 doi: 10.1063/1.372199
[23]
Lucovsky G, Mikkelsen J C, Liang W Y, et al. Optical phonon anisotropies in the layer crystals SnS2 and SnSe2. Phys Rev B, 1976, 14: 1663 doi: 10.1103/PhysRevB.14.1663
[24]
Dang X Z, Wang C D, Yu E T, et al. Persistent photoconductivity and defect levels in n-type AlGaN/GaN hetrostructures. Appl Phys Lett, 1998, 72: 2745 doi: 10.1063/1.121077
[25]
Gupta Y, Arun P. Influence of Urbach tail on the refractive index of p-SnS thin films. Phys Status Solidi C, 2017, 14: 1600207
[26]
Tauc J. Absorption edge and internal electric fields in amorphous semiconductors. Mater Res Bull, 1970, 5: 721 doi: 10.1016/0025-5408(70)90112-1
[27]
Brus L E. Electron–electron and electron–hole interactions in small semiconductor crystallites: the size dependence of the lowest excited electronic state. J Chem Phys, 1984, 80: 4403 doi: 10.1063/1.447218
[28]
Sze S M. Physics of semiconductor devices. 2nd ed. John Wiley and Sons, Inc. 1981
[29]
Ran F Y, Xiao Z, Toda Y, et al. n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route. Sci Rep, 2015, 5: 10428 doi: 10.1038/srep10428
[30]
Gupta Y, Arun P. Influence of strain on the sensitivity of tin sulphide films. Mater Chem Phys, 2017, 191: 86 doi: 10.1016/j.matchemphys.2017.01.029

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    Received: 11 February 2017 Revised: 13 April 2017 Online: Uncorrected proof: 30 October 2017Accepted Manuscript: 13 November 2017Published: 01 November 2017

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      Article Navigation >  Journal of Semiconductors  > 2017  >  38(11): 113001
      Yashika Gupta, P. Arun. Optimization of SnS active layer thickness for solar cell application[J]. Journal of Semiconductors, 2017, 38(11): 113001. doi: 10.1088/1674-4926/38/11/113001 ****Y Gupta, P. Arun. Optimization of SnS active layer thickness for solar cell application[J]. J. Semicond., 2017, 38(11): 113001. doi: 10.1088/1674-4926/38/11/113001.
      Citation:
      Yashika Gupta, P. Arun. Optimization of SnS active layer thickness for solar cell application[J]. Journal of Semiconductors, 2017, 38(11): 113001. doi: 10.1088/1674-4926/38/11/113001 ****
      Y Gupta, P. Arun. Optimization of SnS active layer thickness for solar cell application[J]. J. Semicond., 2017, 38(11): 113001. doi: 10.1088/1674-4926/38/11/113001.
      shu

      Optimization of SnS active layer thickness for solar cell application

      DOI: 10.1088/1674-4926/38/11/113001
      • 1.

        Department of Electronic Science, University of Delhi-South Campus, Benito Juarez Marg, Delhi 110021, India

      • 2.

        Material Science Research Lab, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007, India

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      • Corresponding author: Email: arunp92@sgtbkhalsa.du.ac.in
      • Received Date: 2017-02-11
      • Revised Date: 2017-04-13
      • Published Date: 2017-11-01

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