Citation: |
Qing-Hai Tan, Xin Zhang, Xiang-Dong Luo, Jun Zhang, Ping-Heng Tan. Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings[J]. Journal of Semiconductors, 2017, 38(3): 031006. doi: 10.1088/1674-4926/38/3/031006
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Q H Tan, X Zhang, X D Luo, J Zhang, P H Tan. Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings[J]. J. Semicond., 2017, 38(3): 031006. doi: 10.1088/1674-4926/38/3/031006.
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Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings
doi: 10.1088/1674-4926/38/3/031006
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Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have attracted extensive attention due to their many novel properties. The atoms within each layer in two-dimensional TMDs are joined together by covalent bonds, while van der Waals interactions combine the layers together. This makes its lattice dynamics layer-number dependent. The evolutions of ultralow frequency (<50 cm-1) modes, such as shear and layer-breathing modes have been well-established. Here, we review the layer-number dependent high-frequency (>50 cm-1) vibration modes in few-layer TMDs and demonstrate how the interlayer coupling leads to the splitting of high-frequency vibration modes, known as Davydov splitting. Such Davydov splitting can be well described by a van der Waals model, which directly links the splitting with the interlayer coupling. Our review expands the understanding on the effect of interlayer coupling on the high-frequency vibration modes in TMDs and other two-dimensional materials. -
References
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