J. Semicond. > 2017, Volume 38 > Issue 3 > 033004, doi: 10.1088/1674-4926/38/3/033004
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SPECIAL TOPIC ON 2D MATERIALS AND DEVICES

Manganese and chromium doping in atomically thin MoS2

Ce Huang1, Yibo Jin1, Weiyi Wang1, Lei Tang1, Chaoyu Song1 and Faxian Xiu1, 2,

+ Author Affiliations

 Corresponding author: Faxian Xiu, Email:Faxian@fudan.edu.cn

PDF

Abstract: Recently, two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications. However, the impurity doping remains a significant challenge owing to the lack of the doping strategy in the atomically thin layers. Here we report on the chromium (Cr) and manganese (Mn) doping in atomically-thin MoS2 crystals grown by chemical vapor deposition. The Cr/Mn doped MoS2 samples are characterized by a peak at 1.76 and 1.79 eV in photoluminescence spectra, respectively, compared with the undoped one at 1.85 eV. The field-effect transistor (FET) devices based on the Mn doping show a higher threshold voltage than that of the pure MoS2 while the Cr doping exhibits the opposite behavior. Importantly, the carrier concentration in these samples displays a remarkable difference arising from the doping effect, consistent with the evolution of the FET performance. The temperature-dependent conductivity measurements further demonstrate a large variation in activation energy. The successful incorporation of the Mn and Cr impurities into the monolayer MoS2 paves the way towards the high Curie temperature two-dimensional dilute magnetic semiconductors.

Key words: MoS2, field effect transistors, dilute magnetic semiconductors, two-dimensional materials



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Fig. 1.  (Color online) Schematic view of the synthesis and the optical properties of the samples. (a) A CVD growth process. Mn and Cr are used as the impurity dopants. (b)-(d) Optical images of the pure/Mn-doped/Cr-doped MoS2 on SiO2/Si substrate, respectively. (e) Photoluminescence spectra of three types of samples. Cr-doped MoS2 shows a strong photoluminescence at 1.76 eV while the Mn-doped MoS2 has a peak at 1.79 eV.

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Fig. 2.  (Color online) Typical device configurations. (a) An optical image of the FET device (after metal deposition and lift-off). Permalloy/Gold were used for making source/drain electrodes. During the measurements, four-probe geometry wastaken to eliminate the contact resistance. The inset shows the overall morphology of the same device. (b) Three-dimensional schematic view of a typical transistor shown in (a).

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Fig. 3.  (Color online) Room-temperature electrical properties of the FET devices. (a, d, g) Ids-Vds curves recorded at different Vbg of 0-50 V for the pure/Mn-doped/Cr-doped MoS2 FETs, respectively. The linear I-V curves indicate good Ohmic contacts. (b, e, h) Ids-Vbg curves at different Vsd of 50-500 mV. (c, f, i) Ids-Vbg curves plotted on a logarithmic scale. Gate leakage current is negligible. (j, k) A comparison of Ids-Vbg curves for the pure MoS2, Mn-doped, Cr-doped devices with Vds = 100 and 400 mV, respectively. (l) Summarized mobility and on/off ratio for three different FET devices. In general, the mobility decreases when MoS2 is doped with Cr while the on/off ratio is enhanced because of the reduced contact resistance.

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Fig. 4.  (Color online) Comparison of temperature-dependent conductivity and schematic drawing of a simplified band structure for MoS2 in the process of doping. (a, b) Arrhenius plots of conductivity for MoS2, Mn-doped, Cr-doped devices when Vbg = 30 and 50 V, respectively. Solid lines are the linear fits to extract the activation energy (Ea). When Vbg = 30 V, the activation energy is 69.1, 15.4, and 120 meV for the pure, Cr-doped and Mn-doped samples, respectively. Increasing the gate to 50 V, the Ea becomes 38.4, 14.1 and 41.7 meV for the three samples. (c) A simplified band structure to show the doping effect. Cr introduces donor levels while Mn moves the Ef towards valence band indicative of p-type-like doping, consistent with the theory[38, 51]

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Table 1.   Device statistics.

Device L.(μm) W.(μm) μ (cm2V-1 s-1)Vth (V) n (cm-2)
Undoped-MoS2 113.5 6.0 18 -24 2:0 × 1012
Undoped-MoS2 28.4 5.1 31 -22 1:8 × 1012
Undoped-MoS2 311.5 6.0 5 -19 1:5 × 1012
Undoped-MoS2 412.8 5.8 8 -24 2:0 × 1012
Cr-doping 18.5 5.0 12 -37 3:0 × 1012
Cr-doping 29.4 9.5 8 -33 2:7 × 1012
Mn-doping 114.0 6.0 7 -2 1:6 × 1011
Mn-doping 28.5 8.0 5 -9 7:3 × 1011
Mn-doping 310.2 8.0 4 -10 8:1 × 1011
DownLoad: CSV
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[20]
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[21]
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[22]
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    Received: 22 August 2016 Revised: 01 November 2016 Online: Published: 01 March 2017

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      Article Navigation >  Journal of Semiconductors  > 2017  >  38(3): 033004
      Ce Huang, Yibo Jin, Weiyi Wang, Lei Tang, Chaoyu Song, Faxian Xiu. Manganese and chromium doping in atomically thin MoS2[J]. Journal of Semiconductors, 2017, 38(3): 033004. doi: 10.1088/1674-4926/38/3/033004 ****C Huang, Y B Jin, W Y Wang, L Tang, C Y Song, F X Xiu. Manganese and chromium doping in atomically thin MoS2[J]. J. Semicond., 2017, 38(3): 033004. doi: 10.1088/1674-4926/38/3/033004.
      Citation:
      Ce Huang, Yibo Jin, Weiyi Wang, Lei Tang, Chaoyu Song, Faxian Xiu. Manganese and chromium doping in atomically thin MoS2[J]. Journal of Semiconductors, 2017, 38(3): 033004. doi: 10.1088/1674-4926/38/3/033004 ****
      C Huang, Y B Jin, W Y Wang, L Tang, C Y Song, F X Xiu. Manganese and chromium doping in atomically thin MoS2[J]. J. Semicond., 2017, 38(3): 033004. doi: 10.1088/1674-4926/38/3/033004.
      shu

      Manganese and chromium doping in atomically thin MoS2

      doi: 10.1088/1674-4926/38/3/033004
      • 1.

        State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China

      • 2.

        Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China

      Funds:

      the Chinese National Science Fund for Talent Training in Basic Science No.J1103204

      Project supported by the National Young 1000 Talent Plan,the Pujiang Talent Plan in Shanghai,the National Natural Science Foundation of China Nos.61322407,11474058,61674040

      Project supported by the National Young 1000 Talent Plan, the Pujiang Talent Plan in Shanghai, the National Natural Science Foundation of China (Nos.61322407,11474058,61674040), and the Chinese National Science Fund for Talent Training in Basic Science (No.J1103204).

      More Information
      • Corresponding author: Email:Faxian@fudan.edu.cn
      • Received Date: 2016-08-22
      • Revised Date: 2016-11-01
      • Published Date: 2017-03-01

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