J. Semicond. > 2018, Volume 39 > Issue 10 > 104003, doi: 10.1088/1674-4926/39/10/104003
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SEMICONDUCTOR DEVICES

Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

Swagata Dey1, , Vedatrayee Chakraborty2, Bratati Mukhopadhyay1 and Gopa Sen1

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 Corresponding author: Swagata Dey, swagatadey2009@gmail.com

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Abstract: The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge1−zCz on Si1−x−yGexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.

Key words: DBQW, MQW, RTD, NDR, tunneling current density



[1]
Deen M J, Basu P K. Silicon photonics: fundamentals and Devices. Chichester U K John Wiley, 2012.
[2]
Pavesi L, Lockwood D J. Silicon photonics. New York: Springer, 2004
[3]
Bauer M , Taraci J, Tolle J, et al. Ge–Sn semiconductors for band-gap and lattice engineering. Appl Phys Lett, 2002, 81: 2992 doi: 10.1063/1.1515133
[4]
Lee J W, Reed M A. Molecular beam epitaxial growth of AlGaAs/InGaAs resonant tunneling structures. J Vac Sci Technol B, 1987, 5(3): 771 doi: 10.1116/1.583745
[5]
Ghosh S, Basu P K. The calculated composition of Ge1−zCz/Ge1−x−zSixSny heterostructure grown on Si for direct gap emission from Ge1−zCz at 1.55 μm. Solid State Commun, 2010, 150: 844 doi: 10.1016/j.ssc.2010.02.017
[6]
Menendez J, Kouvetakis J. Type-I Ge/GeSiSn strained layer heterostructures with a direct Ge band gap. Appl Phys Lett, 2004, 85: 1175 doi: 10.1063/1.1784032
[7]
Chakraborty V, Mukhopadhyay B. Group IV heterojunction laser structure based on S–Ge–Sn–C around 1550 nm: determination of gain coefficient. Proceedings in International Conference in Computers andDevices for Communication, 2015
[8]
Sun G, Soref R A, Cheng H H. Design of an electrically pumped SiGeSn/GeSn/SiGeSn double heterostructure mid infra red laser. J Appl Phys, 2010, 108: 033107 doi: 10.1063/1.3467766
[9]
Chang S W, Chuang S L. Theory of optical gain of Ge-SixGeySn1−x−y quantum-well lasers. IEEE J Quantum Electron, 2007, 43(3): 249 doi: 10.1109/JQE.2006.890401
[10]
Zhu Y H, Xu Q, Fan W J, et al. Theoretical gain of strained GeSn/Ge1−x−ySixSny quantum well laser. J Appl Phys, 2010, 107: 073108 doi: 10.1063/1.3329424
[11]
Chang G E, Chang S W, Chuang S L. Strain-balanced GezSn1−z–SixGeySn1−x−y multiple quantum-well lasers. IEEE J Quantum Electron, 2010, 46(12): 1813 doi: 10.1109/JQE.2010.2059000
[12]
Basu R, Chakraborty V, Mukhopadhyay B, et al. Predicted performance of Ge/GeSn hetero-photo transistors on Si substrate at 1.55 μm. Opt Quant Electron, 2013, 47(2): 387
[13]
Moontragoon P, Vukmirovi'C N, Ikoni'C Z, et al. SnGe asymmetric quantum well electro absorption modulators for long-wave silicon photonics. IEEE J Sel Top Quantum Electron, 2010, 16(1): 100 doi: 10.1109/JSTQE.2009.2026691
[14]
Dey S, Mukhopadhyay B, Basu P K. Modeling of responsivity of GeSn/SiGeSn QWIP. Proceedings in International Conference in Computers andDevices for Communication, 2015
[15]
Esaki L, Tsu R. Superlattics and negative differential conductivity in semiconductors. IBM J Res Develop, 1970, 14: 61 doi: 10.1147/rd.141.0061
[16]
Tsu R, Esaki L. Tunneling in a finite superlattice. Appl Phys Lett, 1973, 22: 562 doi: 10.1063/1.1654509
[17]
Chang L L, Esaki L, Tsu R. Resonant tunnelling in semiconductor double barriers. Appl Phys Lett, 1974, 24: 593 doi: 10.1063/1.1655067
[18]
Wu K Y, Tsai B H, Chen J Z, et al. Sn-based group-IV structure for resonant tunneling diodes. IEEE Electron Device Lett, 2013, 34(8): 951 doi: 10.1109/LED.2013.2266540
[19]
Mukherjee K, Das N R. Tunneling current calculations for nonuniform and asymmetric multiple quantum well structures. J Appl Phys, 2011, 109: 053708 doi: 10.1063/1.3553391
[20]
Handbook of mathematical functions. Edited by Abramowitz M A and Stegun I A. Dover, New York, 1965
Fig. 1.  Schematic structure of MQW RTD with carriers’ movement.

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Fig. 2.  Transmission coefficient variation with energy for single quantum well.

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Fig. 3.  Tunneling current density variation with bias voltage for single quantum well.

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Fig. 4.  Tunneling current density variation with energy of the uniform MQW structure.

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Fig. 5.  Tunnelling current density variation with bias voltage for multiple quantum well.

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Table 1.   Parameters used for calculation.

Parameter Si Ge C Sn
a (Å) 5.4307 5.6573 3.567 6.4892
Edir (eV) 3.3021 0.804 6.5 −0.4102
Eind (eV) 2.1021 0.7013 9.2 0.1202
Δ0 (eV) 0.044 0.3 0 0.8
C11 (Pa) 16.67 12.853 107.9 6.9
C12 (Pa) 6.93 4.826 – 2.93
b = b1 + 2b2 (eV) −2.2 −2.86 −4.67 –
av (eV) 2.46 1.24 −13.9 1.58
ac (eV) −10.06 −8.24 −16.8 −6.00
\setlength{\voffset}{0pt}${\Xi _{\text{d}}}{\text{ + }}\frac{{{\Xi _{\text{u}}}}}{3} $ (eV) 1.5 −2.34 – –
DownLoad: CSV
[1]
Deen M J, Basu P K. Silicon photonics: fundamentals and Devices. Chichester U K John Wiley, 2012.
[2]
Pavesi L, Lockwood D J. Silicon photonics. New York: Springer, 2004
[3]
Bauer M , Taraci J, Tolle J, et al. Ge–Sn semiconductors for band-gap and lattice engineering. Appl Phys Lett, 2002, 81: 2992 doi: 10.1063/1.1515133
[4]
Lee J W, Reed M A. Molecular beam epitaxial growth of AlGaAs/InGaAs resonant tunneling structures. J Vac Sci Technol B, 1987, 5(3): 771 doi: 10.1116/1.583745
[5]
Ghosh S, Basu P K. The calculated composition of Ge1−zCz/Ge1−x−zSixSny heterostructure grown on Si for direct gap emission from Ge1−zCz at 1.55 μm. Solid State Commun, 2010, 150: 844 doi: 10.1016/j.ssc.2010.02.017
[6]
Menendez J, Kouvetakis J. Type-I Ge/GeSiSn strained layer heterostructures with a direct Ge band gap. Appl Phys Lett, 2004, 85: 1175 doi: 10.1063/1.1784032
[7]
Chakraborty V, Mukhopadhyay B. Group IV heterojunction laser structure based on S–Ge–Sn–C around 1550 nm: determination of gain coefficient. Proceedings in International Conference in Computers andDevices for Communication, 2015
[8]
Sun G, Soref R A, Cheng H H. Design of an electrically pumped SiGeSn/GeSn/SiGeSn double heterostructure mid infra red laser. J Appl Phys, 2010, 108: 033107 doi: 10.1063/1.3467766
[9]
Chang S W, Chuang S L. Theory of optical gain of Ge-SixGeySn1−x−y quantum-well lasers. IEEE J Quantum Electron, 2007, 43(3): 249 doi: 10.1109/JQE.2006.890401
[10]
Zhu Y H, Xu Q, Fan W J, et al. Theoretical gain of strained GeSn/Ge1−x−ySixSny quantum well laser. J Appl Phys, 2010, 107: 073108 doi: 10.1063/1.3329424
[11]
Chang G E, Chang S W, Chuang S L. Strain-balanced GezSn1−z–SixGeySn1−x−y multiple quantum-well lasers. IEEE J Quantum Electron, 2010, 46(12): 1813 doi: 10.1109/JQE.2010.2059000
[12]
Basu R, Chakraborty V, Mukhopadhyay B, et al. Predicted performance of Ge/GeSn hetero-photo transistors on Si substrate at 1.55 μm. Opt Quant Electron, 2013, 47(2): 387
[13]
Moontragoon P, Vukmirovi'C N, Ikoni'C Z, et al. SnGe asymmetric quantum well electro absorption modulators for long-wave silicon photonics. IEEE J Sel Top Quantum Electron, 2010, 16(1): 100 doi: 10.1109/JSTQE.2009.2026691
[14]
Dey S, Mukhopadhyay B, Basu P K. Modeling of responsivity of GeSn/SiGeSn QWIP. Proceedings in International Conference in Computers andDevices for Communication, 2015
[15]
Esaki L, Tsu R. Superlattics and negative differential conductivity in semiconductors. IBM J Res Develop, 1970, 14: 61 doi: 10.1147/rd.141.0061
[16]
Tsu R, Esaki L. Tunneling in a finite superlattice. Appl Phys Lett, 1973, 22: 562 doi: 10.1063/1.1654509
[17]
Chang L L, Esaki L, Tsu R. Resonant tunnelling in semiconductor double barriers. Appl Phys Lett, 1974, 24: 593 doi: 10.1063/1.1655067
[18]
Wu K Y, Tsai B H, Chen J Z, et al. Sn-based group-IV structure for resonant tunneling diodes. IEEE Electron Device Lett, 2013, 34(8): 951 doi: 10.1109/LED.2013.2266540
[19]
Mukherjee K, Das N R. Tunneling current calculations for nonuniform and asymmetric multiple quantum well structures. J Appl Phys, 2011, 109: 053708 doi: 10.1063/1.3553391
[20]
Handbook of mathematical functions. Edited by Abramowitz M A and Stegun I A. Dover, New York, 1965

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    Received: 06 February 2018 Revised: 07 March 2018 Online: Accepted Manuscript: 23 April 2018Uncorrected proof: 25 April 2018Published: 09 October 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(10): 104003
      Swagata Dey, Vedatrayee Chakraborty, Bratati Mukhopadhyay, Gopa Sen. Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode[J]. Journal of Semiconductors, 2018, 39(10): 104003. doi: 10.1088/1674-4926/39/10/104003 ****S Dey, V Chakraborty, B Mukhopadhyay, G Sen, Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode[J]. J. Semicond., 2018, 39(10): 104003. doi: 10.1088/1674-4926/39/10/104003.
      Citation:
      Swagata Dey, Vedatrayee Chakraborty, Bratati Mukhopadhyay, Gopa Sen. Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode[J]. Journal of Semiconductors, 2018, 39(10): 104003. doi: 10.1088/1674-4926/39/10/104003 ****
      S Dey, V Chakraborty, B Mukhopadhyay, G Sen, Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode[J]. J. Semicond., 2018, 39(10): 104003. doi: 10.1088/1674-4926/39/10/104003.
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      Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

      doi: 10.1088/1674-4926/39/10/104003
      • 1.

        Institute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009, India

      • 2.

        B.P. Poddar Institute of Management and Technology (ECE Dept), Kolkata 700052, India

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      • Corresponding author: swagatadey2009@gmail.com
      • Received Date: 2018-02-06
      • Revised Date: 2018-03-07
      • Published Date: 2018-10-01

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