J. Semicond. > 2018, Volume 39 > Issue 2 > 026001, doi: 10.1088/1674-4926/39/2/026001
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SEMICONDUCTOR TECHNOLOGY

Exploration of photosensitive polyimide as the modification layer in thin film microcircuit

Lily Liu1, 2, 3, 4, , Changbin Song1, 2, 3, 4, Bin Xue1, 2, 3, 4, Jing Li1, 2, 3, 4, Junxi Wang1, 2, 3, 4 and Jinmin Li1, 2, 3, 4

+ Author Affiliations

 Corresponding author: Lily Liu, llliu@semi.ac.cn

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Abstract: Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.

Key words: thin film, microcircuit, photosensitive polyimide, silicon dioxide, imidization, temperature



[1]
Wang J, Yan X J, Xu Y X, et al. Organic thin-film transistors having inorganic/organic double gate insulators. Appl Phys Lett, 2004, 85(22): 5424 doi: 10.1063/1.1825054
[2]
Veres J, Ogier S D, Leeming S W, et al. Low-k insulators as the choice of of dielectrics in organic field effect transistors. Adv Funct Mater, 2003, 13(3): 199 doi: 10.1002/adfm.200390030
[3]
Chen L, Zhu W Q, Bai Y, et al. Effects of surface-modified gate dielectrics oil electrical characteristics of organic thin-film transistors. Chin J Semicond, 2007, 28(10): 1590
[4]
Yang W K, Liu F F, Zhang E S, et al. Influence of atmosphere and force during thermal imidizaton on the structure and properties of BPDA-PDA polymide fibers. Chem J Chin Univ, 2017, 38(1): 150
[5]
Qiu J L, Huo J C, Lei Y L, et al. Exploration of one copolymerization polyimide film forming process. New Chem Mater, 2017, 45(1): 88
[6]
Liang H Y, Ju W, Wu W D, et al. Effect of soaking on etching of polymide heavy-ion microfiltration membranes. Nucl Tech, 2017, 40(1): 010501
[7]
Chung C M, Cho S Y, Kim M S, et al. Photosensitive polyimides having N-sulfonyloxyimide and N-carbonyloxyimide groups in the main chain. Opt Mater, 2002, 21: 421
[8]
Oh S K, Jang T, Pouladi S, et al. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization. Appl Phys Express, 2017, 10(1): 016502 doi: 10.7567/APEX.10.016502
[9]
Zheng F, Lu Q H. A computational probe into the dissolution Inhibitation effect of diazonaphthoquinone photoactive compounds on positive tone photosensitive polyimides. J Phys Chem C, 2017, 121(3): 1704 doi: 10.1021/acs.jpcc.6b11316
[10]
Dick A R, Bell W K, Luke B, et al. High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant. J Micro/Nanolithograph, MEMS, MOEMS, 2016, 15(3): 033503 doi: 10.1117/1.JMM.15.3.033503
[11]
Oh S K, Jang T, Jo Y J, et al. Improved package reliability of AlGaN/GaN HFETs on 150 mm Si substrates by SiNx/polyimide dual passivation layers. Surf Coat Technol, 2016, 307: 1124 doi: 10.1016/j.surfcoat.2016.04.046
[12]
Meng L H, Kang X N, Wang P, et al. Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure. Superlattices Microstruct, 2016, 91: 313 doi: 10.1016/j.spmi.2015.12.031
[13]
Akin M, Rezem M, Rahlves M, et al. Direct hot embossing of microelements by means of photostructurable polyimide. J Micro/Nanolithograph, MEMS, MOEMS, 2016, 15(3): 034506 doi: 10.1117/1.JMM.15.3.034506
[14]
Windrich F, Kappert E J, Malanin M, et al. In-situ imidization analysis in microscale thin films of an ester-type photosensitive polyimide for microelectronic packaging applications. Eur Polymer J, 2016, 84: 279 doi: 10.1016/j.eurpolymj.2016.09.020
[15]
Chen Z G, Zhao J Q, Yan S J, et al. Dielectric properties of photocrosslinkable polyimide/functional graphene oxide composites. Mater Lett, 2015, 157: 201 doi: 10.1016/j.matlet.2015.05.104
[16]
Im J H, Chae B, Lee S H, et al. photosensitive polyimides with rigid side chain and their thermal stable liquid-crystal alignment properties. Molecul Cryst Liquid Cryst, 2014, 601(1): 20 doi: 10.1080/15421406.2014.940488
Fig. 2.  Thickness on different coating rate.

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Fig. 1.  Photosensitive polyimide as modification layer in microcircuit.

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Fig. 3.  Temperature on the different curing time.

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Fig. 4.  The photo of silicon dioxide pattern in process of Step 5. (r is the actual diameter of the film hole; R is the design diameter of the film hole)

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Table 1.   Thickness on different coating rate.

Rate (r/s) Coating thickness (μm)
y1 y2 y3 y4 y5 Average Stedv
2000 1.7 1.8 2 2.2 2.4 2.02 0.29
2200 1.7 1.7 1.8 1.9 2.2 1.86 0.21
2400 1.5 1.6 1.7 1.4 1.8 1.6 0.16
2600 1.2 1.4 1.4 1.5 1.6 1.42 0.15
2800 1.1 1.2 1.3 1.3 1.4 1.26 0.11
3000 1 1 1.1 1.2 1.2 1.1 0.10
DownLoad: CSV

Table 2.   Changes of r on different curing rate.

Sample T (°C) Time (min)
A 120 30 r = R
180 60
250 240
B 120 30 r > R
180 60
250 240
300 60
C 80 120 r = R
150 60
180 60
250 60
D 80 120 r > R
150 60
180 60
250 60
300 60
DownLoad: CSV
[1]
Wang J, Yan X J, Xu Y X, et al. Organic thin-film transistors having inorganic/organic double gate insulators. Appl Phys Lett, 2004, 85(22): 5424 doi: 10.1063/1.1825054
[2]
Veres J, Ogier S D, Leeming S W, et al. Low-k insulators as the choice of of dielectrics in organic field effect transistors. Adv Funct Mater, 2003, 13(3): 199 doi: 10.1002/adfm.200390030
[3]
Chen L, Zhu W Q, Bai Y, et al. Effects of surface-modified gate dielectrics oil electrical characteristics of organic thin-film transistors. Chin J Semicond, 2007, 28(10): 1590
[4]
Yang W K, Liu F F, Zhang E S, et al. Influence of atmosphere and force during thermal imidizaton on the structure and properties of BPDA-PDA polymide fibers. Chem J Chin Univ, 2017, 38(1): 150
[5]
Qiu J L, Huo J C, Lei Y L, et al. Exploration of one copolymerization polyimide film forming process. New Chem Mater, 2017, 45(1): 88
[6]
Liang H Y, Ju W, Wu W D, et al. Effect of soaking on etching of polymide heavy-ion microfiltration membranes. Nucl Tech, 2017, 40(1): 010501
[7]
Chung C M, Cho S Y, Kim M S, et al. Photosensitive polyimides having N-sulfonyloxyimide and N-carbonyloxyimide groups in the main chain. Opt Mater, 2002, 21: 421
[8]
Oh S K, Jang T, Pouladi S, et al. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization. Appl Phys Express, 2017, 10(1): 016502 doi: 10.7567/APEX.10.016502
[9]
Zheng F, Lu Q H. A computational probe into the dissolution Inhibitation effect of diazonaphthoquinone photoactive compounds on positive tone photosensitive polyimides. J Phys Chem C, 2017, 121(3): 1704 doi: 10.1021/acs.jpcc.6b11316
[10]
Dick A R, Bell W K, Luke B, et al. High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant. J Micro/Nanolithograph, MEMS, MOEMS, 2016, 15(3): 033503 doi: 10.1117/1.JMM.15.3.033503
[11]
Oh S K, Jang T, Jo Y J, et al. Improved package reliability of AlGaN/GaN HFETs on 150 mm Si substrates by SiNx/polyimide dual passivation layers. Surf Coat Technol, 2016, 307: 1124 doi: 10.1016/j.surfcoat.2016.04.046
[12]
Meng L H, Kang X N, Wang P, et al. Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure. Superlattices Microstruct, 2016, 91: 313 doi: 10.1016/j.spmi.2015.12.031
[13]
Akin M, Rezem M, Rahlves M, et al. Direct hot embossing of microelements by means of photostructurable polyimide. J Micro/Nanolithograph, MEMS, MOEMS, 2016, 15(3): 034506 doi: 10.1117/1.JMM.15.3.034506
[14]
Windrich F, Kappert E J, Malanin M, et al. In-situ imidization analysis in microscale thin films of an ester-type photosensitive polyimide for microelectronic packaging applications. Eur Polymer J, 2016, 84: 279 doi: 10.1016/j.eurpolymj.2016.09.020
[15]
Chen Z G, Zhao J Q, Yan S J, et al. Dielectric properties of photocrosslinkable polyimide/functional graphene oxide composites. Mater Lett, 2015, 157: 201 doi: 10.1016/j.matlet.2015.05.104
[16]
Im J H, Chae B, Lee S H, et al. photosensitive polyimides with rigid side chain and their thermal stable liquid-crystal alignment properties. Molecul Cryst Liquid Cryst, 2014, 601(1): 20 doi: 10.1080/15421406.2014.940488

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    Received: 02 March 2017 Revised: 12 July 2017 Online: Uncorrected proof: 24 January 2018Accepted Manuscript: 02 February 2018Published: 02 February 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(2): 026001
      Lily Liu, Changbin Song, Bin Xue, Jing Li, Junxi Wang, Jinmin Li. Exploration of photosensitive polyimide as the modification layer in thin film microcircuit[J]. Journal of Semiconductors, 2018, 39(2): 026001. doi: 10.1088/1674-4926/39/2/026001 ****L Liu, C B Song, B Xue, J Li, J X Wang, J M Li. Exploration of photosensitive polyimide as the modification layer in thin film microcircuit[J]. J. Semicond., 2018, 39(2): 026001. doi: 10.1088/1674-4926/39/2/026001.
      Citation:
      Lily Liu, Changbin Song, Bin Xue, Jing Li, Junxi Wang, Jinmin Li. Exploration of photosensitive polyimide as the modification layer in thin film microcircuit[J]. Journal of Semiconductors, 2018, 39(2): 026001. doi: 10.1088/1674-4926/39/2/026001 ****
      L Liu, C B Song, B Xue, J Li, J X Wang, J M Li. Exploration of photosensitive polyimide as the modification layer in thin film microcircuit[J]. J. Semicond., 2018, 39(2): 026001. doi: 10.1088/1674-4926/39/2/026001.
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      Exploration of photosensitive polyimide as the modification layer in thin film microcircuit

      doi: 10.1088/1674-4926/39/2/026001
      • 1.

        Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

      • 3.

        State Key Laboratory of Solid State Lighting, Chinese Academy of Sciences, Beijing 100083, China

      • 4.

        Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China

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      • Corresponding author: llliu@semi.ac.cn
      • Received Date: 2017-03-02
      • Revised Date: 2017-07-12
        • Available Online: 2018-02-01
      • Published Date: 2018-02-01

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