Fig. 1.
(a) The scanning infrared microscopy (SIRM) and (b) photoluminescence (PL) images of the cross-section of a mc-Si ingot with strip-like shadow.
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| Citation: |
Xiang Zhang, Chunlai Huang, Lei Wang, Min Zhou. Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement—effect of shadow area in multicrystalline silicon ingots on cell efficiency[J]. Journal of Semiconductors, 2018, 39(8): 083004. doi: 10.1088/1674-4926/39/8/083004
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X Zhang, C L Huang, L Wang, M Zhou, Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement—effect of shadow area in multicrystalline silicon ingots on cell efficiency[J]. J. Semicond., 2018, 39(8): 083004. doi: 10.1088/1674-4926/39/8/083004.
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Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement—effect of shadow area in multicrystalline silicon ingots on cell efficiency
DOI: 10.1088/1674-4926/39/8/083004
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Abstract
We characterized strip-like shadows in cast multicrystalline silicon (mc-Si) ingots. Blocks and wafers were analyzed using scanning infrared microscopy, photoluminescence spectroscopy, laser scanning confocal microscopy, field-emission scanning electron microscopy, X-ray energy-dispersive spectrometry, and microwave photoconductivity decay technique. The effect on solar cell performance is discussed. The results show that the non-microcrystalline shadow region in Si ingots consists of precipitates of Fe, O, and C. The size of these Fe–O–C precipitates found at the shadow region is ~25 μm. Fe–O–C impurities can slightly reduce the minority carrier lifetime of the wafers while severely decrease in shunt resistance, leading to the increase in reverse current of the solar cells and degradation in cell efficiency. -
References
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