Fig. 1.
(Color online) Schematic cross section of the fabricated Ga2O3 MOSFET with Lgd of 4 μm.
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| Citation: |
Yuanjie Lü, Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, Shixiong Liang, Cui Wei, Xingye Zhou, Zhihong Feng. Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V[J]. Journal of Semiconductors, 2019, 40(1): 012803. doi: 10.1088/1674-4926/40/1/012803
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Y J Lü, X B Song, Z Z He, Y G Wang, X Tan, S X Liang, C Wei, X Y Zhou, Z H Feng, Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V[J]. J. Semicond., 2019, 40(1): 012803. doi: 10.1088/1674-4926/40/1/012803.
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Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V
DOI: 10.1088/1674-4926/40/1/012803
More Information
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Abstract
Ga2O3 metal–oxide–semiconductor field-effect transistors (MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga2O3 film, which was grown by metal organic chemical vapor deposition (MOCVD) on an Fe-doped semi-insulating (010) Ga2O3 substrate. The structure consisted of a 400 nm unintentionally doped (UID) Ga2O3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at Vgs of 3 V. The off-state current was as low as 7.1 × 10−11 A/mm, and the drain current ION/IOFF ratio reached 109. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.-
Keywords:
- Ga2O3,
- MOSFET,
- breakdown voltage,
- filed plate
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References
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