RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Lishu Wu; Jiayun Dai; Yuechan Kong; Tangsheng Chen; Tong Zhang

doi:10.1088/1674-4926/43/9/092601

J. Semicond. > 2022, Volume 43 > Issue 9 > 092601

ARTICLES

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Lishu Wu^{1, 2}, Jiayun Dai², Yuechan Kong², Tangsheng Chen² and Tong Zhang^{1, 3,}

+ Author Affiliations

Corresponding author: Tong Zhang, tzhang@seu.edu.cn

DOI: 10.1088/1674-4926/43/9/092601

Abstract: This letter presents the fabrication of InP double heterojunction bipolar transistors (DHBTs) on a 3-inch flexible substrate with various thickness values of the benzocyclobutene (BCB) adhesive bonding layer, the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and calculated. InP DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f_T = 358 GHz and maximum oscillation frequency f_MAX = 530 GHz. Moreover, the frequency performance of the InP DHBT on flexible substrates at different bending radii are compared. It is shown that the bending strain has little effect on the frequency characteristics (less than 8.5%), and these bending tests prove that InP DHBT has feasible flexibility.

Key words: InP DHBT, thermal resistance, radio frequency, bending

References

[1]	Cherenack K H, Kattamis A Z, Hekmatshoar B, et al. Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic. IEEE Electron Device Lett, 2007, 28, 1004 doi: 10.1109/LED.2007.907411
[2]	Saxena S, Kim D C, Park J H, et al. Polycrystalline silicon thin-film transistor using Xe flash-lamp annealing. IEEE Electron Device Lett, 2010, 31, 1242 doi: 10.1109/LED.2010.2064282
[3]	Crone B, Dodabalapur A, Lin Y Y, et al. Large-scale complementary integrated circuits based on organic transistors. Nature, 2000, 403, 521 doi: 10.1038/35000530
[4]	Haas U, Gold H, Haase A, et al. Submicron pentacene-based organic thin film transistors on flexible substrates. Appl Phys Lett, 2007, 91, 043511 doi: 10.1063/1.2763973
[5]	Takahashi T, Takei K, Adabi E, et al. Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics. ACS Nano, 2010, 4, 5855 doi: 10.1021/nn1018329
[6]	Menard E, Nuzzo R G, Rogers J A. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates. Appl Phys Lett, 2005, 86, 093507 doi: 10.1063/1.1866637
[7]	Ahn J H, Kim H S, Lee K J, et al. High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates. IEEE Electron Device Lett, 2006, 27, 460 doi: 10.1109/LED.2006.874764
[8]	Lin Y M, Dimitrakopoulos C, Jenkins K A, et al. 100-GHz transistors from wafer-scale epitaxial graphene. Science, 2010, 327, 662 doi: 10.1126/science.1184289
[9]	Cao Y, Brady G J, Gui H, et al. Radio frequency transistors using aligned semiconducting carbon nanotubes with current-gain cutoff frequency and maximum oscillation frequency simultaneously greater than 70 GHz. ACS Nano, 2016, 10, 6782 doi: 10.1021/acsnano.6b02395
[10]	Sun Y G, Menard E, Rogers J A, et al. Gigahertz operation in flexible transistors on plastic substrates. Appl Phys Lett, 2006, 88, 183509 doi: 10.1063/1.2198832
[11]	Akinwande D, Petrone N, Hone J. Two-dimensional flexible nanoelectronics. Nat Commun, 2014, 5, 5678 doi: 10.1038/ncomms6678
[12]	Lee K J, Meitl M A, Ahn J H, et al. Bendable GaN high electron mobility transistors on plastic substrates. J Appl Phys, 2006, 100, 124507 doi: 10.1063/1.2349837
[13]	Petrone N, Meric I, Chari T R, et al. Graphene field-effect transistors for radio-frequency flexible electronics. IEEE J Electron Devices Soc, 2015, 3, 44 doi: 10.1109/JEDS.2014.2363789
[14]	Lee J, Ha T J, Li H F, et al. 25 GHz embedded-gate graphene transistors with high-K dielectrics on extremely flexible plastic sheets. ACS Nano, 2013, 7, 7744 doi: 10.1021/nn403487y
[15]	Wang C, Chien J C, Fang H, et al. Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates. Nano Lett, 2012, 12, 4140 doi: 10.1021/nl301699k
[16]	Shi J, Wichmann N, Roelens Y, et al. Microwave performance of 100 nm-gate In_0.53Ga_0.47As/In_0.52Al_0.48As high electron mobility transistors on plastic flexible substrate. Appl Phys Lett, 2011, 99, 203505 doi: 10.1063/1.3663533
[17]	Shi J, Wichmann N, Roelens Y, et al. Electrical characterization of In_0.53Ga_0.47As/In_0.52Al_0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions. Appl Phys Lett, 2013, 102, 243503 doi: 10.1063/1.4811787
[18]	Wu L S, Dai J Y, Wang Y, et al. High performance wafer scale flexible InP double heterogeneous bipolar transistors. Semicond Sci Technol, 2021, 36, 03LT02 doi: 10.1088/1361-6641/abe05b
[19]	Liu W. Thermal-electrical properties. In: Handbook III-V Heterojunction Bipolar Transistors. New York: Wiley, 1998
[20]	Ruiz-Palmero J M, Hammer U, Jäckel H, et al. Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits. Solid State Electron, 2007, 51, 842 doi: 10.1016/j.sse.2007.04.005
[21]	Niu B, Wang Y, Cheng W, et al. Common base four-finger InGaAs/InP double heterojunction bipolar transistor with maximum oscillation frequency 535 GHz. Chin Phys Lett, 2015, 32, 172 doi: 10.1088/0256-307X/32/7/077304
[22]	Cheng W, Wang Y, Zhao Y, et al. A THz InGaAs/InP double heterojunction bipolar transistor with f_max= 325 GHz and BV_CBO = 10.6 V. J Semicond, 2013, 34, 054006 doi: 10.1088/1674-4926/34/5/054006
[23]	Jung Y H, Chang T H, Zhang H L, et al. High-performance green flexible electronics based on biodegradable cellulose nanofibril paper. Nat Commun, 2015, 6, 7170 doi: 10.1038/ncomms8170
[24]	Zeng Y P, Ostinelli O, Lövblom R, et al. 400-GHz InP/GaAsSb DHBTs with low-noise microwave performance. IEEE Electron Device Lett, 2010, 31, 1122 doi: 10.1109/LED.2010.2061213
[25]	Chang T H, Xiong K L, Park S H, et al. High power fast flexible electronics: Transparent RF AlGaN/GaN HEMTs on plastic substrates. 2015 IEEE MTT-S International Microwave Symposium, 2015, 1 doi: 10.1109/MWSYM.2015.7167085
[26]	Lecavelier des Etangs-Levallois A, Dubois E, Lesecq M, et al. 150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate. IEEE Electron Device Lett, 2011, 32, 1510 doi: 10.1109/LED.2011.2166241
[27]	Seo J H, Ling T, Gong S Q, et al. Fast flexible transistors with a nanotrench structure. Sci Rep, 2016, 6, 24771 doi: 10.1038/srep24771
[28]	Qin G X, Cai T H, Yuan H C, et al. Flexible radio-frequency single-crystal germanium switch on plastic substrates. Appl Phys Lett, 2014, 104, 163501 doi: 10.1063/1.4872256
[29]	Cho S J, Jung Y H, Ma Z Q. X-band compatible flexible microwave inductors and capacitors on plastic substrate. IEEE J Electron Devices Soc, 2015, 3, 435 doi: 10.1109/JEDS.2015.2446957
[30]	Sun L, Qin G X, Huang H, et al. Flexible high-frequency microwave inductors and capacitors integrated on a polyethylene terephthalate substrate. Appl Phys Lett, 2010, 96, 013509 doi: 10.1063/1.3280040

Fig. 1. (Color online) The schematic diagram of InP DHBT device on flexible substrate.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (a) FIB cross-sectional image of InP DHBT device on flexible substrate with 1 μm BCB. (b) FIB cross-sectional image of InP DHBT device on flexible substrate with 100 nm BCB.

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Fig. 3. (Color online) Experimental and calculated R_th for InP DHBT and flexible substrate InP DHBT.

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Fig. 4. (Color online) The corresponding I_C–V_CE of InP DHBT and flexible substrate InP DHBT.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Mason’s unilateral gain U and |h₂₁|² as a function of frequency measured the InP DHBT and flexible substrate InP DHBT.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) (a) Photographs of InP DHBT on flexible substrate under bending conditions on test bench. The InP DHBT frequency performance under different bending radii: (b) f_T/f_T(flat), (c) f_MAX/f_MAX(flat).

DownLoad: Full-Size Img PowerPoint

Table 1. Comparison of the f_T and f_MAX with other previous reported flexible transistors.

Device	f_T (GHz)	f_MAX (GHz)	Ref.
Graphene transistor	198	28.2	[13]
InAs MOSFET	105	22.9	[15]
InGaAs/InAlAs HEMT	160	290	[17]
GaAs HBT	37.5	6.9	[24]
GaN HEMT	60	115	[25]
SOI CMOS	150	160	[26]
Si MOFET	5	38	[27]
InP DHBT	337	485	[18]
InP DHBT	358	530	This Work

DownLoad: CSV

[1]	Cherenack K H, Kattamis A Z, Hekmatshoar B, et al. Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic. IEEE Electron Device Lett, 2007, 28, 1004 doi: 10.1109/LED.2007.907411
[2]	Saxena S, Kim D C, Park J H, et al. Polycrystalline silicon thin-film transistor using Xe flash-lamp annealing. IEEE Electron Device Lett, 2010, 31, 1242 doi: 10.1109/LED.2010.2064282
[3]	Crone B, Dodabalapur A, Lin Y Y, et al. Large-scale complementary integrated circuits based on organic transistors. Nature, 2000, 403, 521 doi: 10.1038/35000530
[4]	Haas U, Gold H, Haase A, et al. Submicron pentacene-based organic thin film transistors on flexible substrates. Appl Phys Lett, 2007, 91, 043511 doi: 10.1063/1.2763973
[5]	Takahashi T, Takei K, Adabi E, et al. Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics. ACS Nano, 2010, 4, 5855 doi: 10.1021/nn1018329
[6]	Menard E, Nuzzo R G, Rogers J A. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates. Appl Phys Lett, 2005, 86, 093507 doi: 10.1063/1.1866637
[7]	Ahn J H, Kim H S, Lee K J, et al. High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates. IEEE Electron Device Lett, 2006, 27, 460 doi: 10.1109/LED.2006.874764
[8]	Lin Y M, Dimitrakopoulos C, Jenkins K A, et al. 100-GHz transistors from wafer-scale epitaxial graphene. Science, 2010, 327, 662 doi: 10.1126/science.1184289
[9]	Cao Y, Brady G J, Gui H, et al. Radio frequency transistors using aligned semiconducting carbon nanotubes with current-gain cutoff frequency and maximum oscillation frequency simultaneously greater than 70 GHz. ACS Nano, 2016, 10, 6782 doi: 10.1021/acsnano.6b02395
[10]	Sun Y G, Menard E, Rogers J A, et al. Gigahertz operation in flexible transistors on plastic substrates. Appl Phys Lett, 2006, 88, 183509 doi: 10.1063/1.2198832
[11]	Akinwande D, Petrone N, Hone J. Two-dimensional flexible nanoelectronics. Nat Commun, 2014, 5, 5678 doi: 10.1038/ncomms6678
[12]	Lee K J, Meitl M A, Ahn J H, et al. Bendable GaN high electron mobility transistors on plastic substrates. J Appl Phys, 2006, 100, 124507 doi: 10.1063/1.2349837
[13]	Petrone N, Meric I, Chari T R, et al. Graphene field-effect transistors for radio-frequency flexible electronics. IEEE J Electron Devices Soc, 2015, 3, 44 doi: 10.1109/JEDS.2014.2363789
[14]	Lee J, Ha T J, Li H F, et al. 25 GHz embedded-gate graphene transistors with high-K dielectrics on extremely flexible plastic sheets. ACS Nano, 2013, 7, 7744 doi: 10.1021/nn403487y
[15]	Wang C, Chien J C, Fang H, et al. Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates. Nano Lett, 2012, 12, 4140 doi: 10.1021/nl301699k
[16]	Shi J, Wichmann N, Roelens Y, et al. Microwave performance of 100 nm-gate In_0.53Ga_0.47As/In_0.52Al_0.48As high electron mobility transistors on plastic flexible substrate. Appl Phys Lett, 2011, 99, 203505 doi: 10.1063/1.3663533
[17]	Shi J, Wichmann N, Roelens Y, et al. Electrical characterization of In_0.53Ga_0.47As/In_0.52Al_0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions. Appl Phys Lett, 2013, 102, 243503 doi: 10.1063/1.4811787
[18]	Wu L S, Dai J Y, Wang Y, et al. High performance wafer scale flexible InP double heterogeneous bipolar transistors. Semicond Sci Technol, 2021, 36, 03LT02 doi: 10.1088/1361-6641/abe05b
[19]	Liu W. Thermal-electrical properties. In: Handbook III-V Heterojunction Bipolar Transistors. New York: Wiley, 1998
[20]	Ruiz-Palmero J M, Hammer U, Jäckel H, et al. Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits. Solid State Electron, 2007, 51, 842 doi: 10.1016/j.sse.2007.04.005
[21]	Niu B, Wang Y, Cheng W, et al. Common base four-finger InGaAs/InP double heterojunction bipolar transistor with maximum oscillation frequency 535 GHz. Chin Phys Lett, 2015, 32, 172 doi: 10.1088/0256-307X/32/7/077304
[22]	Cheng W, Wang Y, Zhao Y, et al. A THz InGaAs/InP double heterojunction bipolar transistor with f_max= 325 GHz and BV_CBO = 10.6 V. J Semicond, 2013, 34, 054006 doi: 10.1088/1674-4926/34/5/054006
[23]	Jung Y H, Chang T H, Zhang H L, et al. High-performance green flexible electronics based on biodegradable cellulose nanofibril paper. Nat Commun, 2015, 6, 7170 doi: 10.1038/ncomms8170
[24]	Zeng Y P, Ostinelli O, Lövblom R, et al. 400-GHz InP/GaAsSb DHBTs with low-noise microwave performance. IEEE Electron Device Lett, 2010, 31, 1122 doi: 10.1109/LED.2010.2061213
[25]	Chang T H, Xiong K L, Park S H, et al. High power fast flexible electronics: Transparent RF AlGaN/GaN HEMTs on plastic substrates. 2015 IEEE MTT-S International Microwave Symposium, 2015, 1 doi: 10.1109/MWSYM.2015.7167085
[26]	Lecavelier des Etangs-Levallois A, Dubois E, Lesecq M, et al. 150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate. IEEE Electron Device Lett, 2011, 32, 1510 doi: 10.1109/LED.2011.2166241
[27]	Seo J H, Ling T, Gong S Q, et al. Fast flexible transistors with a nanotrench structure. Sci Rep, 2016, 6, 24771 doi: 10.1038/srep24771
[28]	Qin G X, Cai T H, Yuan H C, et al. Flexible radio-frequency single-crystal germanium switch on plastic substrates. Appl Phys Lett, 2014, 104, 163501 doi: 10.1063/1.4872256
[29]	Cho S J, Jung Y H, Ma Z Q. X-band compatible flexible microwave inductors and capacitors on plastic substrate. IEEE J Electron Devices Soc, 2015, 3, 435 doi: 10.1109/JEDS.2015.2446957
[30]	Sun L, Qin G X, Huang H, et al. Flexible high-frequency microwave inductors and capacitors integrated on a polyethylene terephthalate substrate. Appl Phys Lett, 2010, 96, 013509 doi: 10.1063/1.3280040

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Received: 20 March 2022 Revised: 19 April 2022 Online: Accepted Manuscript: 21 June 2022Uncorrected proof: 22 June 2022Published: 02 September 2022

Article Navigation > Journal of Semiconductors > 2022 > 43(9): 092601

Lishu Wu, Jiayun Dai, Yuechan Kong, Tangsheng Chen, Tong Zhang. RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions[J]. Journal of Semiconductors, 2022, 43(9): 092601. doi: 10.1088/1674-4926/43/9/092601 ****Lishu Wu, Jiayun Dai, Yuechan Kong, Tangsheng Chen, Tong Zhang. 2022: RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions. Journal of Semiconductors, 43(9): 092601. doi: 10.1088/1674-4926/43/9/092601

Citation:

Lishu Wu, Jiayun Dai, Yuechan Kong, Tangsheng Chen, Tong Zhang. 2022: RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions. Journal of Semiconductors, 43(9): 092601. doi: 10.1088/1674-4926/43/9/092601

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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

DOI: 10.1088/1674-4926/43/9/092601

1.
Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
2.
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
3.
Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China

More Information

Lishu Wu：received the M.S. degree from Southeast University in 2010. He is currently pursuing the Ph.D. degree in electronic science and engineering from Southeast University. His research interest includes the technology of heterogeneous integration of compound semiconductor with Si CMOS and flexible substrate. He is the author of more than 10 articles, and more than 15 inventions
Tong Zhang：is a professor at Southeast University. He is engaged in micro-nano integrated devices, surface plasmons, microwave photonics and other fields. He has undertaken more than 40 major research projects of the Ministry of Science and Technology and the National Natural Science Foundation of China. He has been granted 6 American invention patents and more than 50 Chinese invention patents. He has published more than 140 papers and 5 monographs and translated books
Corresponding author: tzhang@seu.edu.cn
Received Date: 2022-03-20
Revised Date: 2022-04-19

Available Online: 2022-06-21

Abstract

Abstract

This letter presents the fabrication of InP double heterojunction bipolar transistors (DHBTs) on a 3-inch flexible substrate with various thickness values of the benzocyclobutene (BCB) adhesive bonding layer, the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and calculated. InP DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f_T = 358 GHz and maximum oscillation frequency f_MAX = 530 GHz. Moreover, the frequency performance of the InP DHBT on flexible substrates at different bending radii are compared. It is shown that the bending strain has little effect on the frequency characteristics (less than 8.5%), and these bending tests prove that InP DHBT has feasible flexibility.
- InP DHBT,
- thermal resistance,
- radio frequency,
- bending

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References(30)

References

[1]	Cherenack K H, Kattamis A Z, Hekmatshoar B, et al. Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic. IEEE Electron Device Lett, 2007, 28, 1004 doi: 10.1109/LED.2007.907411
[2]	Saxena S, Kim D C, Park J H, et al. Polycrystalline silicon thin-film transistor using Xe flash-lamp annealing. IEEE Electron Device Lett, 2010, 31, 1242 doi: 10.1109/LED.2010.2064282
[3]	Crone B, Dodabalapur A, Lin Y Y, et al. Large-scale complementary integrated circuits based on organic transistors. Nature, 2000, 403, 521 doi: 10.1038/35000530
[4]	Haas U, Gold H, Haase A, et al. Submicron pentacene-based organic thin film transistors on flexible substrates. Appl Phys Lett, 2007, 91, 043511 doi: 10.1063/1.2763973
[5]	Takahashi T, Takei K, Adabi E, et al. Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics. ACS Nano, 2010, 4, 5855 doi: 10.1021/nn1018329
[6]	Menard E, Nuzzo R G, Rogers J A. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates. Appl Phys Lett, 2005, 86, 093507 doi: 10.1063/1.1866637
[7]	Ahn J H, Kim H S, Lee K J, et al. High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates. IEEE Electron Device Lett, 2006, 27, 460 doi: 10.1109/LED.2006.874764
[8]	Lin Y M, Dimitrakopoulos C, Jenkins K A, et al. 100-GHz transistors from wafer-scale epitaxial graphene. Science, 2010, 327, 662 doi: 10.1126/science.1184289
[9]	Cao Y, Brady G J, Gui H, et al. Radio frequency transistors using aligned semiconducting carbon nanotubes with current-gain cutoff frequency and maximum oscillation frequency simultaneously greater than 70 GHz. ACS Nano, 2016, 10, 6782 doi: 10.1021/acsnano.6b02395
[10]	Sun Y G, Menard E, Rogers J A, et al. Gigahertz operation in flexible transistors on plastic substrates. Appl Phys Lett, 2006, 88, 183509 doi: 10.1063/1.2198832
[11]	Akinwande D, Petrone N, Hone J. Two-dimensional flexible nanoelectronics. Nat Commun, 2014, 5, 5678 doi: 10.1038/ncomms6678
[12]	Lee K J, Meitl M A, Ahn J H, et al. Bendable GaN high electron mobility transistors on plastic substrates. J Appl Phys, 2006, 100, 124507 doi: 10.1063/1.2349837
[13]	Petrone N, Meric I, Chari T R, et al. Graphene field-effect transistors for radio-frequency flexible electronics. IEEE J Electron Devices Soc, 2015, 3, 44 doi: 10.1109/JEDS.2014.2363789
[14]	Lee J, Ha T J, Li H F, et al. 25 GHz embedded-gate graphene transistors with high-K dielectrics on extremely flexible plastic sheets. ACS Nano, 2013, 7, 7744 doi: 10.1021/nn403487y
[15]	Wang C, Chien J C, Fang H, et al. Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates. Nano Lett, 2012, 12, 4140 doi: 10.1021/nl301699k
[16]	Shi J, Wichmann N, Roelens Y, et al. Microwave performance of 100 nm-gate In_0.53Ga_0.47As/In_0.52Al_0.48As high electron mobility transistors on plastic flexible substrate. Appl Phys Lett, 2011, 99, 203505 doi: 10.1063/1.3663533
[17]	Shi J, Wichmann N, Roelens Y, et al. Electrical characterization of In_0.53Ga_0.47As/In_0.52Al_0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions. Appl Phys Lett, 2013, 102, 243503 doi: 10.1063/1.4811787
[18]	Wu L S, Dai J Y, Wang Y, et al. High performance wafer scale flexible InP double heterogeneous bipolar transistors. Semicond Sci Technol, 2021, 36, 03LT02 doi: 10.1088/1361-6641/abe05b
[19]	Liu W. Thermal-electrical properties. In: Handbook III-V Heterojunction Bipolar Transistors. New York: Wiley, 1998
[20]	Ruiz-Palmero J M, Hammer U, Jäckel H, et al. Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits. Solid State Electron, 2007, 51, 842 doi: 10.1016/j.sse.2007.04.005
[21]	Niu B, Wang Y, Cheng W, et al. Common base four-finger InGaAs/InP double heterojunction bipolar transistor with maximum oscillation frequency 535 GHz. Chin Phys Lett, 2015, 32, 172 doi: 10.1088/0256-307X/32/7/077304
[22]	Cheng W, Wang Y, Zhao Y, et al. A THz InGaAs/InP double heterojunction bipolar transistor with f_max= 325 GHz and BV_CBO = 10.6 V. J Semicond, 2013, 34, 054006 doi: 10.1088/1674-4926/34/5/054006
[23]	Jung Y H, Chang T H, Zhang H L, et al. High-performance green flexible electronics based on biodegradable cellulose nanofibril paper. Nat Commun, 2015, 6, 7170 doi: 10.1038/ncomms8170
[24]	Zeng Y P, Ostinelli O, Lövblom R, et al. 400-GHz InP/GaAsSb DHBTs with low-noise microwave performance. IEEE Electron Device Lett, 2010, 31, 1122 doi: 10.1109/LED.2010.2061213
[25]	Chang T H, Xiong K L, Park S H, et al. High power fast flexible electronics: Transparent RF AlGaN/GaN HEMTs on plastic substrates. 2015 IEEE MTT-S International Microwave Symposium, 2015, 1 doi: 10.1109/MWSYM.2015.7167085
[26]	Lecavelier des Etangs-Levallois A, Dubois E, Lesecq M, et al. 150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate. IEEE Electron Device Lett, 2011, 32, 1510 doi: 10.1109/LED.2011.2166241
[27]	Seo J H, Ling T, Gong S Q, et al. Fast flexible transistors with a nanotrench structure. Sci Rep, 2016, 6, 24771 doi: 10.1038/srep24771
[28]	Qin G X, Cai T H, Yuan H C, et al. Flexible radio-frequency single-crystal germanium switch on plastic substrates. Appl Phys Lett, 2014, 104, 163501 doi: 10.1063/1.4872256
[29]	Cho S J, Jung Y H, Ma Z Q. X-band compatible flexible microwave inductors and capacitors on plastic substrate. IEEE J Electron Devices Soc, 2015, 3, 435 doi: 10.1109/JEDS.2015.2446957
[30]	Sun L, Qin G X, Huang H, et al. Flexible high-frequency microwave inductors and capacitors integrated on a polyethylene terephthalate substrate. Appl Phys Lett, 2010, 96, 013509 doi: 10.1063/1.3280040

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