Fig. 1.
(Color online) The simple diagram of the home-made vertical cylindrical dual temperature zone furnace.
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| Citation: |
Liyuan Cheng, Hezhi Zhang, Wenhui Zhang, Hongwei Liang. Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction[J]. Journal of Semiconductors, 2023, 44(6): 062804. doi: 10.1088/1674-4926/44/6/062804
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Liyuan Cheng, Hezhi Zhang, Wenhui Zhang, Hongwei Liang. 2023: Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction. Journal of Semiconductors, 44(6): 062804. doi: 10.1088/1674-4926/44/6/062804
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Investigation of β-Ga2O3 thick films grown on c-plane sapphire via carbothermal reduction
DOI: 10.1088/1674-4926/44/6/062804
More Information
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Liyuan Cheng：received her Bachelor’s degree from University of Jinan in 2020. She is currently pursuing a Master’s degree at the School of Microelectronics, Dalian University of Technology at Dalian, China, under the supervision of Prof. Hezhi Zhang. Her research interests center on the growth of β-Ga2O3 -
Hezhi Zhang：received his Master’s degree from Dalian University of Technology, Dalian, China in 2012 and Ph.D. degree from the Paris-Saclay University, Paris, France in 2016. He joined École Polytechnique Fédérale de Lausanne as a postdoc researcher in August 2016. In 2019, he joined the Dalian University of Technology as an associate professor. His research interests focus on the wide bandgap semiconductor materials and power devices -
Wenhui Zhang：received her Master’s degree from Liaoning Normal University, Liaoning, China. She is currently working toward the Ph.D. degree at the Dalian university of Technology, Liaoning, China. Her research interests center on ultra-wide bandgap semiconductor of β-Ga2O3 -
Hongwei Liang：is a professor in the School of Microelectronics, Dalian University of Technology, Dalian, China. He received his Ph.D. degree from Changchun Institute of Optical Machinery and Physics, Chinese Academy of Sciences, Changchun, China. In 2005, he joined the Dalian University of Technology. His research interests include wide bandgap semiconductor detector, HEMT devices and biosensors, the third generation of semiconductor light-emitting devices - Corresponding author: hez.zhang@dlut.edu.cn; hwliang@dlut.edu.cn
- Revised Date: 2023-03-13 Available Online: 2023-03-20
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Abstract
We investigated the influence of the growth temperature, O2 flow, molar ratio between Ga2O3 powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by a carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga2O3 illustrate that β-Ga2O3 growth by the carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050 °C. The fastest growth rate of β-Ga2O3 films was produced when the O2 flow was 20 sccm. To guarantee that β-Ga2O3 films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga2O3 powder should be set at 10 : 1. -
References
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