Fig. 1.
(Color online) Cross-section of considered GaN/AlGaN HEMT transistor.
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| Citation: |
Amgad A. Al-Saman, Eugeny A. Ryndin, Xinchuan Zhang, Yi Pei, Fujiang Lin. Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J]. Journal of Semiconductors, 2023, 44(8): 082802. doi: 10.1088/1674-4926/44/8/082802
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Amgad A. Al-Saman, Eugeny A. Ryndin, Xinchuan Zhang, Yi Pei, Fujiang Lin, Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J]. Journal of Semiconductors, 2023, 44(8), 082802 doi: 10.1088/1674-4926/44/8/082802
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Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs
DOI: 10.1088/1674-4926/44/8/082802
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Amgad A. Al-Saman：was born in Yemen, in 1988. He received the B.Sc. degree (with honours) in electronics and microelectronics and M.S. degree in electronics and nanoelectronics from Southern Federal University, Russia, in 2012 and 2014, respectively. From 2014 to 2018 he was a junior researcher at Scientific and Educational Center "Nanotechnology" at Southern Federal University. At the end of 2018 he was certified researcher. In 2019 he joined the University of Science and Technology of China, Hefei as a Ph.D student. Currently, he is a visiting scholar at Dynax Semiconductor Inc. He has authored multiple international journal and conference publication. His current research interests include physical modelling of semiconductor devices -
Eugeny A. Ryndin：was born in Gorlovka, Donetsk region, USSR in 1968. He graduated from the Radiotechnical Institute, Taganrog, Russia in 1992. He received the Ph.D degree in electrical engineering in 1997 and the Doctor of Science degree in 2008. From 1997 to 2004, he was an Associate Professor with the Electronic Apparatuses Design Department, Taganrog State University of Radioengineering. From 2004 to 2008, he was a Senior Researcher with the Southern Scientific Center, Russian Academy of Science, Rostov-on-Don. From 2008 to 2019, he was a Professor with the Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog. Since 2019, he has been a Professor with the Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University "LETI", Saint Petersburg. His research interests include micro- and nanoelectronic elements development and numerical modeling, MEMS development and VLSI design -
Yi Pei：received the B.S degree in Electrical Engineering from Peking University, Beijing, China, in 2004, the M.S and Ph.D degrees in Electrical Engineering from University of Santa Barbara, U.S.A, in 2005 and 2009, respectively. He is currently the V.P. of technology, in charge of GaN product design, cutting edge GaN technology development and I.P. strategy. His research interests include microwave and millimeter wave GaN electronics design and modeling, GaN power electronics design and application, and Ⅲ-N semiconductor processing technology development. He is the author or coauthor of more than 100 journal and conference papers. He also holds more than 150 granted patents and patent applications -
Fujiang Lin：received the B.S. and M.S. degrees from the University of Science and Technology of China (USTC), Hefei, China, in 1982 and 1984, respectively, and the Dr.-Ing. degree from the University of Kassel, Germany, in 1993, all in electrical engineering. His research interest is in the development of CMOS as a cost-effective technology platform for 60-GHz band millimeter-wave SoC, as well as millimeter wave therapy for healthcare applications. He is initiator and co-organizer of international workshops and short courses at APMC99, SPIE00, ISAP06, and IMS07. Dr. Lin was the recipient of the 1998 Innovator Award presented by EDN Asia Magazine. He has authored or coauthored over 150 scientific papers. He holds over 50 patents - Corresponding author: yi.pei@dynax-semi.com; linfj@ustc.edu.cn
- Revised Date: 2023-01-27 Available Online: 2023-03-08
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Abstract
A physics-based analytical expression that predicts the charge, electrical field and potential distributions along the gated region of the GaN HEMT channel has been developed. Unlike the gradual channel approximation (GCA), the proposed model considers the non-uniform variation of the concentration under the gated region as a function of terminal applied voltages. In addition, the model can capture the influence of mobility and channel temperature on the charge distribution trend. The comparison with the hydrodynamic (HD) numerical simulation showed a high agreement of the proposed model with numerical data for different bias conditions considering the self-heating and quantization of the electron concentration. The analytical nature of the model allows us to reduce the computational and time cost of the simulation. Also, it can be used as a core expression to develop a complete physics-based transistor Ⅳ model without GCA limitation. -
References
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