Chin. J. Semicond. > 1982, Volume 3 > Issue 3 > 248-250
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用背散射和沟道技术分析异质外延硅层的缺陷

承焕生 , 徐志伟 , 赵国庆 , 周筑颖 and 郁元桓

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(3): 248-250
      承焕生, 徐志伟, 赵国庆, 周筑颖, 郁元桓. 用背散射和沟道技术分析异质外延硅层的缺陷[J]. 半导体学报(英文版), 1982, 3(3): 248-250.
      Citation:
      承焕生, 徐志伟, 赵国庆, 周筑颖, 郁元桓. 用背散射和沟道技术分析异质外延硅层的缺陷[J]. 半导体学报(英文版), 1982, 3(3): 248-250.
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      • Received Date: 2015-08-20

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